Residual strain in ZnO nanowires grown by catalyst-free chemical vapor deposition on GaN/sapphire (0001)

2008 ◽  
Vol 92 (20) ◽  
pp. 203110 ◽  
Author(s):  
F. C. Tsao ◽  
J. Y. Chen ◽  
C. H. Kuo ◽  
G. C. Chi ◽  
C. J. Pan ◽  
...  
RSC Advances ◽  
2018 ◽  
Vol 8 (51) ◽  
pp. 28928-28933 ◽  
Author(s):  
Haitao Jiang ◽  
Shibin Liu ◽  
Liyuan Liang ◽  
Wenqiang Lu

Photocurrent of the ZnO nanowire-based photodetectors was enhanced 8 times by modifying the surface of nanowires with oxygen plasma.


2005 ◽  
Vol 11 (2) ◽  
pp. 165-168 ◽  
Author(s):  
Jae Young Park ◽  
Dong Ju Lee ◽  
Young Su Yun ◽  
Yong Sung Hong ◽  
Byung-Teak Lee ◽  
...  

Carbon ◽  
2014 ◽  
Vol 68 ◽  
pp. 399-405 ◽  
Author(s):  
Yun Liu ◽  
Minghan Xu ◽  
Xingzhong Zhu ◽  
Minmin Xie ◽  
Yanjie Su ◽  
...  

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1062
Author(s):  
Yi Chu ◽  
Yugui Cui ◽  
Shaoyun Huang ◽  
Yingjie Xing ◽  
Hongqi Xu

SmB6 nanowires, as a prototype of nanostructured topological Kondo insulator, have shown rich novel physical phenomena relating to their surface. Catalyst-assisted chemical vapor deposition (CVD) is a common approach to prepare SmB6 nanowires and Ni is the most popular catalyst used to initiate the growth of SmB6 nanowires. Here, we study the effect of growth mechanism on the surface of SmB6 nanowires synthesized by CVD. Two types of SmB6 nanowires are obtained when using Ni as the catalyst. In addition to pure SmB6 nanowires without Ni impurity, a small amount of Ni is detected on the surface of some SmB6 nanowires by element analysis with transmission electron microscopy. In order to eliminate the possible distribution of Ni on nanowire surface, we synthesize single crystalline SmB6 nanowires by CVD without using catalyst. The difference between catalyst-assisted and catalyst-free growth mechanism is discussed.


Sign in / Sign up

Export Citation Format

Share Document