Synthesis of ZnO nanowalls on Al2O3 (0001) by catalyst-free metalorganic chemical vapor deposition

2005 ◽  
Vol 11 (2) ◽  
pp. 165-168 ◽  
Author(s):  
Jae Young Park ◽  
Dong Ju Lee ◽  
Young Su Yun ◽  
Yong Sung Hong ◽  
Byung-Teak Lee ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Catalyst Free ◽  
Metalorganic Chemical

Catalyst-Free InGaP Nanoneedles Grown on Si Substrate by Metalorganic Chemical Vapor Deposition

2013 ◽  
Vol 333-335 ◽  
pp. 1975-1978
Author(s):  
Peng Zhang ◽  
Yan Liu ◽  
Jing Wei Guo ◽  
Xiao Pin Zhang
Keyword(s):  
Chemical Vapor Deposition ◽  
Electron Microscope ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Sem Images ◽  
Catalyst Free ◽  
Metalorganic Chemical ◽  
Scanning Electron

Catalyst-free InGaP nanoneedles were grown on Si substrate via metalorganic chemical vapor deposition. From scanning electron microscope (SEM) images, various nanoneedles were observed and the relevant growth mechanism was discussed.

scholarly journals Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Electromagnetic Spectrum ◽  
Material System ◽  
Metalorganic Chemical

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.

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