Nonradiative recombination at threading dislocations in n-type GaN: Studied by cathodoluminescence and defect selective etching

2008 ◽  
Vol 92 (23) ◽  
pp. 231909 ◽  
Author(s):  
M. Albrecht ◽  
J. L. Weyher ◽  
B. Lucznik ◽  
I. Grzegory ◽  
S. Porowski
Keyword(s):  
Selective Etching ◽  
Threading Dislocations ◽  
Nonradiative Recombination

scholarly journals Coincident Electron Channeling and Cathodoluminescence Studies of Threading Dislocations in GaN

2013 ◽  
Vol 20 (1) ◽  
pp. 55-60 ◽  
Author(s):  
Gunasekar Naresh-Kumar ◽  
Jochen Bruckbauer ◽  
Paul R. Edwards ◽  
Simon Kraeusel ◽  
Ben Hourahine ◽  
...  
Keyword(s):  
Structural Damage ◽  
Light Emission ◽  
Threading Dislocations ◽  
Nonradiative Recombination ◽  
Contrast Imaging ◽  
Force Microscopy ◽  
Electron Channeling ◽  
Microscopy Techniques ◽  
Cathodoluminescence Imaging ◽  
Edge Dislocations

AbstractWe combine two scanning electron microscopy techniques to investigate the influence of dislocations on the light emission from nitride semiconductors. Combining electron channeling contrast imaging and cathodoluminescence imaging enables both the structural and luminescence properties of a sample to be investigated without structural damage to the sample. The electron channeling contrast image is very sensitive to distortions of the crystal lattice, resulting in individual threading dislocations appearing as spots with black–white contrast. Dislocations giving rise to nonradiative recombination are observed as black spots in the cathodoluminescence image. Comparison of the images from exactly the same micron-scale region of a sample demonstrates a one-to-one correlation between the presence of single threading dislocations and resolved dark spots in the cathodoluminescence image. In addition, we have also obtained an atomic force microscopy image from the same region of the sample, which confirms that both pure edge dislocations and those with a screw component (i.e., screw and mixed dislocations) act as nonradiative recombination centers for the Si-doped c-plane GaN thin film investigated.

Dislocations and Traps in MBE Grown Lattice Mismatched p- InGaAs/GaAs Layers on GaAs Substrates

1997 ◽  
Vol 484 ◽  
Author(s):  
A. Y. Du ◽  
M. F. Li ◽  
T. C. Chong ◽  
Z. Zhang
Keyword(s):  
Activation Energy ◽  
Layer Thickness ◽  
Deep Level ◽  
Photo Luminescence ◽  
Threading Dislocations ◽  
Misfit Dislocations ◽  
Trap Level ◽  
Nonradiative Recombination ◽  
Hole Trap ◽  
Transient Spectroscopy

AbstractDislocations and traps in MBE grown p-InGaAs/GaAs lattice-mismatched heterostructures are investigated by Cross-section Transmission Electron Microscopy (XTEM), Deep Level Transient Spectroscopy (DLTS) and Photo-luminescence (PL). The misfit dislocations and the threading dislocations observed by XTEM in different samples with different In mole fractions and different InGaAs layer thickness generally satisfy the Dodson-Tsao's plastic flow critical layer thickness curve. The threading dislocations in bulk layers introduce three hole trap levels HI, H2 and H5 with DLTS activation energies of 0.32 eV, 0.40 eV, 0.88 eV, respectively, and one electron trap El with DLTS activation energy of 0.54 eV. The misfit dislocations in relaxed InGaAs/GaAs interface induce a hole trap level H4 with DLTS activation energy between the range of 0.67–0.73 eV. All dislocation induced traps are nonradiative recombination centers which greatly degrade the optical property of the InGaAs/GaAs layers.

scholarly journals Micropyramid Vertical Ultraviolet GaN/AlGaN Multiple Quantum Wells LEDs on Si(111)

2021 ◽  
Vol 2021 ◽  
pp. 1-5
Author(s):  
Yuebo Liu ◽  
Honghui Liu ◽  
Hang Yang ◽  
Wanqing Yao ◽  
Fengge Wang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Leakage Current ◽  
Light Emission ◽  
Uv Light ◽  
Multiple Quantum ◽  
Threading Dislocations ◽  
Nonradiative Recombination ◽  
Small Current ◽  
Uv Led ◽  
Optical Output

Micropyramid vertical GaN-based ultraviolet (UV) light-emitting diodes (LEDs) on Si(111) substrate have been fabricated by selective area growth to reduce threading dislocations and the polarization effects. There is no-light emission at the bottom and six planes of the pyramid at lower current due to the leakage current and nonradiative recombination of the dislocation at the bottom and the 90° threading dislocations (TDs) at six planes of the pyramid, and the top of the pyramid is the high-brightness region. The micropyramid UV LED has a high optical output intensity under a small current injection, and the series resistance of unit area is only a quarter of the conventional vertical LEDs, so the micropyramid UV LED would have a high output power under the drive circuit. The reverse leakage current of a single micropyramid UV LED is 2 nA at −10 V.

scholarly journals Correlation between structural properties and nonradiative recombination behaviors of threading dislocations in freestanding GaN substrates grown by hydride vapor phase epitaxy

CrystEngComm ◽  
2020 ◽  
Vol 22 (48) ◽  
pp. 8299-8312
Author(s):  
Yongzhao Yao ◽  
Yoshihiro Sugawara ◽  
Daisaku Yokoe ◽  
Koji Sato ◽  
Yukari Ishikawa ◽  
...  
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Threading Dislocations ◽  
Nonradiative Recombination

Nonradiative recombination behaviors of threading dislocations and their correlation with the dislocation types.

scholarly journals Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN

2014 ◽  
Vol 116 (8) ◽  
pp. 083504 ◽  
Author(s):  
Sakari Sintonen ◽  
Mariusz Rudziński ◽  
Sami Suihkonen ◽  
Henri Jussila ◽  
Michael Knetzger ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Selective Etching ◽  
Threading Dislocations ◽  
X Ray

Threading dislocation classification for 4H-SiC substrates using the KOH etching method

CrystEngComm ◽  
2018 ◽  
Vol 20 (7) ◽  
pp. 978-982 ◽  
Author(s):  
Yingxin Cui ◽  
Xiaobo Hu ◽  
Xuejian Xie ◽  
Xiangang Xu
Keyword(s):  
Selective Etching ◽  
Threading Dislocation ◽  
Threading Dislocations ◽  
Etching Method ◽  
Koh Etching

We have studied the threading dislocations of 4H-SiC substrates with different conductivity types by means of molten KOH defect selective etching.

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