Direct correlation between nonradiative recombination centers and threading dislocations in InGaN quantum wells by near-field photoluminescence spectroscopy

2006 ◽  
Vol 3 (6) ◽  
pp. 1897-1901 ◽  
Author(s):  
Akio Kaneta ◽  
Mitsuru Funato ◽  
Yukio Narukawa ◽  
Takashi Mukai ◽  
Yoichi Kawakami
Keyword(s):  
Quantum Wells ◽  
Near Field ◽  
Photoluminescence Spectroscopy ◽  
Threading Dislocations ◽  
Nonradiative Recombination ◽  
Recombination Centers ◽  
Ingan Quantum Wells

Multimode Scanning Near-Field Photoluminescence Spectroscopy of InGaN Quantum Wells

2018 ◽  
Author(s):  
Saulius Marcinkevicius ◽  
Mounir Mensi ◽  
Ruslan Ivanov ◽  
Leah Y. Kuritzky ◽  
Steven P. DenBaars ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Near Field ◽  
Photoluminescence Spectroscopy ◽  
Ingan Quantum Wells

Nonradiative recombination centers in deep UV-wavelength AlGaN quantum wells detected by below-gap excitation light

2019 ◽  
Vol 58 (SC) ◽  
pp. SCCB37 ◽  
Author(s):  
M. Ismail Hossain ◽  
Yuri Itokazu ◽  
Shunsuke Kuwaba ◽  
Norihiko Kamata ◽  
Noritoshi Maeda ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Nonradiative Recombination ◽  
Excitation Light ◽  
Recombination Centers ◽  
Deep Uv

scholarly journals Photoluminescence Characterization of Nonradiative Recombination Centers in Light Emitting Materials by Utilizing Below-Gap Excitation: A Mini Review of Two-Wavelength Excited Photoluminescence

2015 ◽  
Vol 43 ◽  
pp. 1-9
Author(s):  
Norihiko Kamata ◽  
Abu Zafor Md. Touhidul Islam
Keyword(s):  
Quantum Wells ◽  
Electrical Contact ◽  
Intensity Change ◽  
Nonradiative Recombination ◽  
Excitation Light ◽  
Light Emitting ◽  
Recombination Centers ◽  
Pl Intensity ◽  
Trap Filling

We have developed an optical method of detecting and characterizing nonradiative recombination (NRR) centers without electrical contact. The method combines a below-gap excitation (BGE) light with a conventional above-gap excitation light in photoluminescence (PL) measurement, and discriminates the PL intensity change due to switching on and off the BGE. A quantitative analysis of the detected NRR centers became possible by utilizing the saturating tendency of the PL intensity change with increasing the BGE density due to trap filling effect. Some experimental results of AlGaAs, InGaN, and AlGaN quantum wells were shown to allocate the development and present status as well as to exemplify their interpretations.

Optical detection of nonradiative recombination centers in AlGaN quantum wells for deep UV region

2014 ◽  
Vol 11 (3-4) ◽  
pp. 832-835 ◽  
Author(s):  
A. Z. M. Touhidul Islam ◽  
N. Murakoshi ◽  
T. Fukuda ◽  
H. Hirayama ◽  
N. Kamata
Keyword(s):  
Quantum Wells ◽  
Optical Detection ◽  
Nonradiative Recombination ◽  
Recombination Centers ◽  
Deep Uv

High resolution near-field spectroscopy investigation of tilted InGaN quantum wells

2003 ◽  
Vol 0 (7) ◽  
pp. 2674-2677 ◽  
Author(s):  
F. Hitzel ◽  
U. Ahrend ◽  
N. Riedel ◽  
U. Rossow ◽  
A. Hangleiter
Keyword(s):  
High Resolution ◽  
Quantum Wells ◽  
Near Field ◽  
Field Spectroscopy ◽  
Ingan Quantum Wells

Spatially resolved near-field photoluminescence spectroscopy of II–VI quantum wells: The role of localized excitons

1999 ◽  
Vol 86 (12) ◽  
pp. 6793-6797 ◽  
Author(s):  
R. Cingolani ◽  
G. Bastard ◽  
M. Labardi ◽  
F. Fuso ◽  
M. Allegrini ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Near Field ◽  
Photoluminescence Spectroscopy ◽  
Spatially Resolved ◽  
Localized Excitons

Impacts of Si-doping on vacancy complex formation and their influences on deep ultraviolet luminescence dynamics in Al x Ga1-x N films and multiple quantum wells grown by metalorganic vapor phase epitaxy

2021 ◽  
Author(s):  
Shigefusa F. Chichibu ◽  
Hideto MIYAKE ◽  
Akira Uedono
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Si Doping ◽  
Deep Ultraviolet ◽  
Si Doped ◽  
Recombination Centers

Abstract To give a clue for increasing emission efficiencies of Al x Ga1-x N-based deep ultraviolet light emitters, the origins and influences on carrier concentration and minority carrier lifetime (τminority), which determines the internal quantum efficiency, of midgap recombination centers in c-plane Si-doped Al0.60Ga0.40N epilayers and Al0.68Ga0.32N quantum wells (QWs) grown by metalorganic vapor phase epitaxy were studied by temporally and spatially resolved luminescence measurements, making a correlation with the results of positron annihilation measurement. For the Al0.60Ga0.40N epilayers, τminority decreased as the concentration of cation vacancies (VIII) increased, indicating that VIII, most probably decorated with nitrogen vacancies (VN), VIII(VN) n , are major nonradiative recombination centers (NRCs). For heavily Si-doped Al0.60Ga0.40N, a generation of electron-compensating complexes (VIII-SiIII) is suggested. For lightly Si-doping regime, τminority of the QW emission was increased by appropriate Si-doping in the wells, which simultaneously increased the terrace width. The importance of wetting conditions is suggested for decreasing the NRC concentration.

Hydrogen Passivation of Defects in InGaAs/AlxGal-xAs Quantum Wells

1992 ◽  
Vol 262 ◽  
Author(s):  
S. M. Lord ◽  
G. Roos ◽  
B. Pezeshki ◽  
J. S. Harris ◽  
N. M. Johnson
Keyword(s):  
Quantum Wells ◽  
Depth Distribution ◽  
Multilayered Structure ◽  
Nonradiative Recombination ◽  
Hydrogen Passivation ◽  
Defect Passivation ◽  
Recombination Centers ◽  
Pl Intensity ◽  
Secondary Ion

ABSTRACTThe effect of the diffusion of monatomic hydrogen into InGaAs/AlGaAs quantum wells has been investigated using photoluminescence (PL) and Secondary Ion Mass Spectroscopy (SIMS). The structures were grown by molecular beam epitaxy and hydrogenated with a remote plasma. For In0.2Ga0.8AlxGA1-xAs quantum wells, hydrogenation significant increases the integrated PL intensity from bound excitons at 77 K. The enhancement of the PL is ascribed to removal of nonradiative recombination centers by hydrogen passivation of defects either at the heterojunction interface or within the epilayers. This PL enhancement (and defect passivation) increases as the Al concentration in the AlGaAs layers increases from 0 to 33 at%. A 50% increase of PL intensity is observed for InGaAs/GaAs. For 33 at%, the increase is a factor of 9. We also diffused deuterium into these InGaAs/AlGaAs quantum wells. The enhancement of the PL by deuteration was similar to that by hydrogenation. The isotopie substitution permits the determination of the depth distribution of deuterium in the multilayered structure by SIMS. SIMS results support the conclusion that more defects are passivated in the higher Al concentration samples.

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