scholarly journals Correlation between structural properties and nonradiative recombination behaviors of threading dislocations in freestanding GaN substrates grown by hydride vapor phase epitaxy

CrystEngComm ◽  
2020 ◽  
Vol 22 (48) ◽  
pp. 8299-8312
Author(s):  
Yongzhao Yao ◽  
Yoshihiro Sugawara ◽  
Daisaku Yokoe ◽  
Koji Sato ◽  
Yukari Ishikawa ◽  
...  
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Threading Dislocations ◽  
Nonradiative Recombination

Nonradiative recombination behaviors of threading dislocations and their correlation with the dislocation types.

Investigation of Optical and Structural Properties of GaN Grown by Hydride Vapor-Phase Epitaxy

2001 ◽  
Vol 188 (1) ◽  
pp. 473-476 ◽  
Author(s):  
V. Kirilyuk ◽  
P.R. Hageman ◽  
P.C.M. Christianen ◽  
W.H.M. Corbeek ◽  
M. Zielinski ◽  
...  
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Electronic and structural properties of GaN grown by hydride vapor phase epitaxy

1996 ◽  
Vol 69 (2) ◽  
pp. 242-244 ◽  
Author(s):  
W. Götz ◽  
L. T. Romano ◽  
B. S. Krusor ◽  
N. M. Johnson ◽  
R. J. Molnar
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Electronic And Structural Properties

Structural properties of GaN grown on SiC substrates by hydride vapor phase epitaxy

1997 ◽  
Vol 6 (10) ◽  
pp. 1532-1535 ◽  
Author(s):  
Yu.V. Melnik ◽  
I.P. Nikitina ◽  
A.E. Nikolaev ◽  
V.A. Dmitriev
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Diffusion-limited nonradiative recombination at extended defects in hydride vapor phase epitaxy GaN layers

2011 ◽  
Vol 98 (20) ◽  
pp. 202105 ◽  
Author(s):  
Patrik Ščajev ◽  
Alexander Usikov ◽  
Vitali Soukhoveev ◽  
Ramūnas Aleksiejūnas ◽  
Kęstutis Jarašiūnas
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Nonradiative Recombination ◽  
Extended Defects ◽  
Diffusion Limited

Electrical, optical, and structural properties of GaN films prepared by hydride vapor phase epitaxy

2014 ◽  
Vol 617 ◽  
pp. 200-206 ◽  
Author(s):  
A.Y. Polyakov ◽  
N.B. Smirnov ◽  
E.B. Yakimov ◽  
A.S. Usikov ◽  
H. Helava ◽  
...  
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Distribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H2and N2

2002 ◽  
Vol 41 (Part 1, No. 1) ◽  
pp. 75-76 ◽  
Author(s):  
Shinya Bohyama ◽  
Kenji Yoshikawa ◽  
Hiroyuki Naoi ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Threading Dislocations ◽  
Carrier Gas ◽  
Lateral Overgrowth

Formation of in situ HVPE a-plane GaN nanodots: effects on the structural properties of a-plane GaN templates

CrystEngComm ◽  
2018 ◽  
Vol 20 (28) ◽  
pp. 4036-4041 ◽  
Author(s):  
Moonsang Lee ◽  
Mino Yang ◽  
Jung-Sub Wi ◽  
Sungsoo Park
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Sapphire Substrates

In situ a-plane GaN nanodots were formed on r-plane sapphire substrates to obtain a-plane GaN layers by using hydride vapor phase epitaxy (HVPE).

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