Exchange-induced terahertz minigap in InAs∕GaSb type II and broken-gap quantum wells

W. Xu; X. F. Wei; J. Zhang

doi:10.1063/1.2913757

Exchange-induced terahertz minigap in InAs∕GaSb type II and broken-gap quantum wells

Applied Physics Letters ◽

10.1063/1.2913757 ◽

2008 ◽

Vol 92 (16) ◽

pp. 162108 ◽

Cited By ~ 5

Author(s):

W. Xu ◽

X. F. Wei ◽

J. Zhang

Keyword(s):

Quantum Wells ◽

Type Ii ◽

Broken Gap

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Molecular beam epitaxy growth and characterization of broken-gap (type II) superlattices and quantum wells for midwave-infrared laser diodes

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.591440 ◽

2000 ◽

Vol 18 (3) ◽

pp. 1623 ◽

Cited By ~ 4

Author(s):

T. C. Hasenberg ◽

P. S. Day ◽

E. M. Shaw ◽

D. J. Magarrell ◽

J. T. Olesberg ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

Laser Diodes ◽

Infrared Laser ◽

Molecular Beam Epitaxy Growth ◽

Type Ii ◽

Midwave Infrared ◽

Broken Gap

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Mid-infrared lasing from self-consistent quantum wells at a type II single broken-gap heterointerface

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2003.08.065 ◽

2004 ◽

Vol 20 (3-4) ◽

pp. 491-495 ◽

Cited By ~ 6

Author(s):

K.D. Moiseev ◽

M.P. Mikhailova ◽

Yu.P. Yakovlev

Keyword(s):

Quantum Wells ◽

Type Ii ◽

Mid Infrared ◽

Self Consistent ◽

Broken Gap

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Two-colour mid-infrared absorption in InAs/GaSb type II and broken-gap quantum wells under gated electric field

Solid State Communications ◽

10.1016/j.ssc.2012.05.003 ◽

2012 ◽

Vol 152 (18) ◽

pp. 1753-1756 ◽

Cited By ~ 1

Author(s):

X.F. Wei ◽

L.W. Liu ◽

L.L. Li ◽

W. Xu

Keyword(s):

Electric Field ◽

Quantum Wells ◽

Infrared Absorption ◽

Type Ii ◽

Mid Infrared ◽

Broken Gap

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Mid-infrared laser diode active region based on type-II broken gap quantum wells

Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Edition. CLEO '99. Conference on Lasers and Electro-Optics (IEEE Cat. No.99CH37013) ◽

10.1109/cleo.1999.834317 ◽

2003 ◽

Author(s):

J.T. Olesberg ◽

M.E. Flatte ◽

P.S. Day ◽

E.M. Shaw ◽

D.J. Magarrell ◽

...

Keyword(s):

Active Region ◽

Quantum Wells ◽

Laser Diode ◽

Infrared Laser ◽

Type Ii ◽

Mid Infrared ◽

Broken Gap

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Band hybridization and spin-splitting in InAs/AlSb/GaSb type II and broken-gap quantum wells

Journal of Applied Physics ◽

10.1063/1.3476059 ◽

2010 ◽

Vol 108 (5) ◽

pp. 053709 ◽

Cited By ~ 17

Author(s):

W. Xu ◽

L. L. Li ◽

H. M. Dong ◽

G. Gumbs ◽

P. A. Folkes

Keyword(s):

Quantum Wells ◽

Spin Splitting ◽

Type Ii ◽

Broken Gap

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OPTICAL STUDIES OF TYPE I AND TYPE II RECOMBINATION IN GaAs-AlAs QUANTUM WELLS

Le Journal de Physique Colloques ◽

10.1051/jphyscol:19875112 ◽

1987 ◽

Vol 48 (C5) ◽

pp. C5-525-C5-528 ◽

Cited By ~ 2

Author(s):

K. J. MOORE ◽

P. DAWSON ◽

C. T. FOXON

Keyword(s):

Quantum Wells ◽

Type I ◽

Type Ii ◽

Optical Studies

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Mid-IR interband cascade electroluminescence in type-II quantum wells

Electronics Letters ◽

10.1049/el:19961049 ◽

1996 ◽

Vol 32 (17) ◽

pp. 1621 ◽

Cited By ~ 24

Author(s):

R.Q. Yang ◽

C.-H. Lin ◽

P.C. Chang ◽

S.J. Murry ◽

D. Zhang ◽

...

Keyword(s):

Quantum Wells ◽

Type Ii ◽

Type Ii Quantum Wells

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Optical characterization of type-II ZnO/ZnS multiple quantum wells grown by atomic layer deposition

Thin Solid Films ◽

10.1016/j.tsf.2019.137740 ◽

2020 ◽

Vol 694 ◽

pp. 137740 ◽

Cited By ~ 2

Author(s):

Mostafa Afifi Hassan ◽

Aadil Waseem ◽

Muhammad Ali Johar ◽

Sou Young Yu ◽

June Key Lee ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Quantum Wells ◽

Atomic Layer ◽

Optical Characterization ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Type Ii ◽

Layer Deposition

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Interface roughness scattering in type II broken-gap GaInAsSb/InAs single heterostructures

Journal of Applied Physics ◽

10.1063/1.2817813 ◽

2007 ◽

Vol 102 (11) ◽

pp. 113710 ◽

Cited By ~ 7

Author(s):

M. P. Mikhailova ◽

K. D. Moiseev ◽

T. I. Voronina ◽

T. S. Lagunova ◽

Yu. P. Yakovlev

Keyword(s):

Interface Roughness ◽

Type Ii ◽

Interface Roughness Scattering ◽

Broken Gap

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Optical properties of type-II InGaN/GaAsN/GaN quantum wells

Optical and Quantum Electronics ◽

10.1007/s11082-010-9391-1 ◽

2009 ◽

Vol 41 (11-13) ◽

pp. 779-785 ◽

Cited By ~ 23

Author(s):

Seoung-Hwan Park ◽

Yong-Tak Lee ◽

Jongwoon Park

Keyword(s):

Optical Properties ◽

Quantum Wells ◽

Type Ii

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