Two-colour mid-infrared absorption in InAs/GaSb type II and broken-gap quantum wells under gated electric field

2012 ◽  
Vol 152 (18) ◽  
pp. 1753-1756 ◽  
Author(s):  
X.F. Wei ◽  
L.W. Liu ◽  
L.L. Li ◽  
W. Xu
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Infrared Absorption ◽  
Type Ii ◽  
Mid Infrared ◽  
Broken Gap

Two-Colour Mid-Infrared Optical Absorption under Electric Field in an InAs/GaSb-Based Type II and Broken-Gap Quantum Well

2011 ◽  
Vol 130-134 ◽  
pp. 4122-4125
Author(s):  
X.F. Wei ◽  
J.F. Ruan ◽  
C.G. Xie ◽  
H. Yuan ◽  
J. Song
Keyword(s):  
Optical Absorption ◽  
Electric Field ◽  
Quantum Well ◽  
Applied Electric Field ◽  
Type Ii ◽  
Mid Infrared ◽  
Material Layer ◽  
Broken Gap ◽  
Small Overlap

The optical absorptions are calculated in an InAs/GaSb-based type II and broken-gap quantum well under applied electric field. Two absorption peaks were observed through intraband transitions within the same material layer. The absorption induced by the interlayer transition is rather weak due to the small overlap of electron and hole wavefunctions. The optical absorption can be significantly affected by the applied electric field. Our results suggest that InAs/GaSb-based type II and broken-gap QWs can be employed as two-colour photodetectors, which can be controlled by the applied electric field.

scholarly journals Mid-infrared photoluminescence from structures with InAs/GaSb type II quantum wells

2015 ◽  
Vol 643 ◽  
pp. 012078 ◽  
Author(s):  
A V Selivanov ◽  
I S Makhov ◽  
V Yu Panevin ◽  
A N Sofronov ◽  
D A Firsov ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Type Ii ◽  
Mid Infrared ◽  
Type Ii Quantum Wells

Carrier loss mechanisms in type II quantum wells for the active region of GaSb-based mid-infrared interband cascade lasers

2011 ◽  
Vol 33 (11) ◽  
pp. 1817-1819 ◽  
Author(s):  
G. Sęk ◽  
F. Janiak ◽  
M. Motyka ◽  
K. Ryczko ◽  
J. Misiewicz ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Wells ◽  
Type Ii ◽  
Mid Infrared ◽  
Type Ii Quantum Wells ◽  
Interband Cascade Lasers ◽  
Cascade Lasers ◽  
Loss Mechanisms

scholarly journals Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers

2011 ◽  
Vol 679-680 ◽  
pp. 314-317 ◽  
Author(s):  
Teddy Robert ◽  
Maya Marinova ◽  
Sandrine Juillaguet ◽  
Anne Henry ◽  
Efstathios K. Polychroniadis ◽  
...  
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Effective Mass ◽  
Stacking Faults ◽  
Type Ii ◽  
Mass Approximation ◽  
Natural Type ◽  
Heavily Doped ◽  
Excitonic Recombination ◽  
Different Parts

Both 3C and 6H stacking faults have been observed in a low doped 4H-SiC epitaxial layer grown in a hot-wall CVD reactor on a heavily doped (off-axis) 4H-SiC substrate. They appear differently on the different parts of sample, with energetic dispersion ranging from 3.01 eV to 2.52 eV. Since they behave as natural type-II quantum wells in the 4H-SiC matrix, the thickness dependence of the excitonic recombination is investigated using the standard effective mass approximation. The results are discussed in terms of built-in electric field and inter-well coupling effects.

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