Mid-infrared lasing from self-consistent quantum wells at a type II single broken-gap heterointerface

2004 ◽  
Vol 20 (3-4) ◽  
pp. 491-495 ◽  
Author(s):  
K.D. Moiseev ◽  
M.P. Mikhailova ◽  
Yu.P. Yakovlev
Keyword(s):  
Quantum Wells ◽  
Type Ii ◽  
Mid Infrared ◽  
Self Consistent ◽  
Broken Gap

scholarly journals Mid-infrared photoluminescence from structures with InAs/GaSb type II quantum wells

2015 ◽  
Vol 643 ◽  
pp. 012078 ◽  
Author(s):  
A V Selivanov ◽  
I S Makhov ◽  
V Yu Panevin ◽  
A N Sofronov ◽  
D A Firsov ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Type Ii ◽  
Mid Infrared ◽  
Type Ii Quantum Wells

Carrier loss mechanisms in type II quantum wells for the active region of GaSb-based mid-infrared interband cascade lasers

2011 ◽  
Vol 33 (11) ◽  
pp. 1817-1819 ◽  
Author(s):  
G. Sęk ◽  
F. Janiak ◽  
M. Motyka ◽  
K. Ryczko ◽  
J. Misiewicz ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Wells ◽  
Type Ii ◽  
Mid Infrared ◽  
Type Ii Quantum Wells ◽  
Interband Cascade Lasers ◽  
Cascade Lasers ◽  
Loss Mechanisms

Two-Colour Mid-Infrared Optical Absorption under Electric Field in an InAs/GaSb-Based Type II and Broken-Gap Quantum Well

2011 ◽  
Vol 130-134 ◽  
pp. 4122-4125
Author(s):  
X.F. Wei ◽  
J.F. Ruan ◽  
C.G. Xie ◽  
H. Yuan ◽  
J. Song
Keyword(s):  
Optical Absorption ◽  
Electric Field ◽  
Quantum Well ◽  
Applied Electric Field ◽  
Type Ii ◽  
Mid Infrared ◽  
Material Layer ◽  
Broken Gap ◽  
Small Overlap

The optical absorptions are calculated in an InAs/GaSb-based type II and broken-gap quantum well under applied electric field. Two absorption peaks were observed through intraband transitions within the same material layer. The absorption induced by the interlayer transition is rather weak due to the small overlap of electron and hole wavefunctions. The optical absorption can be significantly affected by the applied electric field. Our results suggest that InAs/GaSb-based type II and broken-gap QWs can be employed as two-colour photodetectors, which can be controlled by the applied electric field.

Exchange-induced terahertz minigap in InAs∕GaSb type II and broken-gap quantum wells

2008 ◽  
Vol 92 (16) ◽  
pp. 162108 ◽  
Author(s):  
W. Xu ◽  
X. F. Wei ◽  
J. Zhang
Keyword(s):  
Quantum Wells ◽  
Type Ii ◽  
Broken Gap

Fourier Transformed Photoreflectance and Photoluminescence of Mid Infrared GaSb-Based Type II Quantum Wells

2009 ◽  
Vol 2 (12) ◽  
pp. 126505 ◽  
Author(s):  
Marcin Motyka ◽  
Grzegorz Sęk ◽  
Jan Misiewicz ◽  
Adam Bauer ◽  
Matthias Dallner ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Type Ii ◽  
Mid Infrared ◽  
Type Ii Quantum Wells
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