Determination of carrier mobility in phenylamine by time-of-flight, dark-injection, and thin film transistor techniques

2008 ◽  
Vol 103 (9) ◽  
pp. 093705 ◽  
Author(s):  
C. H. Cheung ◽  
K. C. Kwok ◽  
S. C. Tse ◽  
S. K. So
Keyword(s):  
Thin Film ◽  
Carrier Mobility ◽  
Thin Film Transistor ◽  
Time Of Flight

An all-organic "soft" thin film transistor with very high carrier mobility

1990 ◽  
Vol 2 (12) ◽  
pp. 592-594 ◽  
Author(s):  
Francis Garnier ◽  
Gilles Horowitz ◽  
Xuezhou Peng ◽  
Denis Fichou
Keyword(s):  
Thin Film ◽  
Carrier Mobility ◽  
Thin Film Transistor ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Soft Thin Film ◽  
Very High

Determination of intrinsic mobility of a bilayer oxide thin-film transistor by pulsedI–Vmethod

2017 ◽  
Vol 28 (17) ◽  
pp. 175201 ◽  
Author(s):  
Hyunsuk Woo ◽  
Taeho Kim ◽  
Jihyun Hur ◽  
Sanghun Jeon
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Oxide Thin Film

Evolution of Nanocrystalline Silicon Layers Deposited at 150°C for Thin Film Transistor Channels

2003 ◽  
Vol 769 ◽  
Author(s):  
I-Chun Cheng ◽  
Steven Allen ◽  
Sigurd Wagner
Keyword(s):  
Thin Film ◽  
Carrier Mobility ◽  
Thin Film Transistor ◽  
Structural Evolution ◽  
Nanocrystalline Silicon ◽  
Crystalline Layer ◽  
Electron Field ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Made In

AbstractThin film transistors of nanocrystalline silicon (nc-Si:H) are made in the staggered topgate, bottom-source/drain geometry. To achieve both high carrier mobility and low off current, the nc-Si:H channel material must be kept thin but comprise a contiguous 10-nm thick crystalline layer at its top. We study this electrically most interesting top layer of the nc-Si:H channel film by AFM and SEM. Introducing an nc-Si:H seed layer underneath the TFT promotes the structural evolution of the nc-Si:H channel layer and raises the electron field effect mobility up to 40 cm2V-1s-1.

Effects of Post Thermal Annealing on the Electrical Properties of Vertical Type Organic Thin Film Transistors Using Poly(3-hexylthiophene) and Its Application in Organic Light Emitting Transistor

2008 ◽  
Vol 8 (9) ◽  
pp. 4881-4884
Author(s):  
Se Young Oh ◽  
Sun Kak Hwang ◽  
Young Do Kim ◽  
Jong Wook Park ◽  
In Nam Kang
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Carrier Mobility ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Static Characteristics ◽  
Electrically Conductive ◽  
Light Emitting ◽  
Organic Light ◽  
Type Transistor

We have fabricated the vertical type organic thin film transistor (OTFT) using electrically conductive poly(3-hexylthiophene) (P3HT) as a p-type organic material. Effects of post thermal annealing and thickness of active layer on the performance of vertical type transistors were investigated. Especially, the correlation between carrier mobility of P3HT after post thermal annealing and static characteristics of the transistor was studied. Carrier mobility was calculated by space charge limited current (SCLC) model from the I–V curves of the prepared device. The vertical type OTFT after post thermal annealing at 120 °C (Tg) showed high current of 0.383 mA and on–off ratio of 22.5 at a low gate voltage of +2.0 V. Additionally, we report on emission characteristics from the vertical type transistor using P3HT.

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