scholarly journals Determination of Charge-Carrier Mobility in Disordered Thin-Film Solar Cells as a Function of Current Density

2018 ◽  
Vol 9 (3) ◽  
Author(s):  
Helmut Mäckel ◽  
Roderick C. I. MacKenzie
2019 ◽  
Author(s):  
Mohd Taukeer Khan ◽  
Manuel Salado ◽  
Abdullah R. D. Almohammedi ◽  
Samrana Kazim ◽  
Shahzada Ahmad

<p>The electron and hole selective contact (SC) play a pivotal role in the performance of perovskite solar cells. In order to separate the interfacial phenomenon from bulk, the influence of charge SC was elucidated, by means of impedance spectroscopy. The specific role played by TiO<sub>2</sub> and <i>Spiro-OMeTAD</i> as electron and hole SC in perovskite solar cells was investigated at short circuit condition at different temperatures. We have probed MAPbI<sub>3</sub> and (FAPbI<sub>3</sub>)<sub>0.85</sub>(MAPbBr<sub>3</sub>)<sub>0.15 </sub>and elucidated parameters such as charge carrier mobility, recombination resistance, time constant and charge carrier kinetics in perovskite layer and at the interface of perovskite/SC. Charge carrier mobility in mixed perovskite was found to be nearly two order of magnitude higher as compared to MAPbI<sub>3</sub>. Moreover, the carrier mobility in devices with only electron SC was found to be higher as compared only hole SC. The charge accumulation at TiO<sub>2</sub>/perovskite/<i>Spiro</i>-OMeTAD interfaces were studied via frequency dependent capacitance, revealing higher charge accumulation at perovskite/S<i>piro</i>-OMeTAD than at TiO<sub>2</sub>/perovskite interface. By performing varying temperature frequency dependent capacitance measurements the distribution of density of state within the bandgap of the perovskites, the emission rate of electrons from the trap states and traps activation energy was determined. </p>


2019 ◽  
Vol 2 (10) ◽  
pp. 7535-7545 ◽  
Author(s):  
Sebastian F. Hoefler ◽  
Georg Haberfehlner ◽  
Thomas Rath ◽  
Andreas Keilbach ◽  
Mathias A. Hobisch ◽  
...  

2014 ◽  
Vol 4 (1) ◽  
Author(s):  
Bronson Philippa ◽  
Martin Stolterfoht ◽  
Paul L. Burn ◽  
Gytis Juška ◽  
Paul Meredith ◽  
...  

2020 ◽  
Vol 34 (11) ◽  
pp. 2050102
Author(s):  
Amirhosein Mosavi ◽  
Beszedes Bertalan ◽  
Felde Imre ◽  
Laszlo Nadai ◽  
Nima E. Gorji

A precise characterization of thin-film solar cells is of huge importance for obtaining high open-circuit voltage and low recombination rates from the interfaces or within the bulk of the main materials. Among many electrical characterization techniques, the two- and four-wire probe using the Cascade instrument is of interest since the resistance of the wires and the electrical contacts can be excluded by the additional two wires in four-wire probe configuration. In this paper, both two- and four-point probes configuration are employed to characterize the CIGS chalcogenide thin-film solar cells. The two-wire probe has been used to measure the current–voltage characteristics of the cell which results in a huge internal resistance. Therefore, the four-wire connection is also used to eliminate the load resistance to enhance the characterization’s accuracy. The load resistance in the two-wire probe diminishes the photogenerated current density at smaller voltage ranges. In contrast, the proposed four-wire probe collects more current at higher voltages due to enhanced carrier collection efficiency from contact electrodes. The current conduction mechanism is also identified at every voltage region represented by the value of the ideality factor of that voltage region. It is observed that a longer time given to the charge collection results in increased current density at a higher voltage. According to the results and device characteristics, a novel double-diode model is suggested to extract the saturation current density, shunt and series resistances and ideality factor of the cells. These cells are shown to be efficient in terms of low recombination at the interfaces and with lower series resistance as the quality of the materials is in its most possible conductive form. The measured internal resistance and saturation current density and ideality factor of the two measurement configurations are measured and compared.


2011 ◽  
Vol 110-116 ◽  
pp. 497-502
Author(s):  
Wei Ping Chu ◽  
Fuh Shyang Juang ◽  
Jian Shian Lin ◽  
Tien Chai Lin ◽  
Chen Wei Kuo

We utilize photonic crystals to enhanced lighttrapping in a-Si:H thin film solar cells. The photonic crystals effectively increase Haze ratio of glass and decrease reflectance of a-Si:H solar cells. Therefore, increase the photon path length to obtain maximum absorption of the absorber layer. The photonic crystals can effective in harvesting weakly absorbing photons with energies just above the band edge. We were spin coated UV glue on the glass, and then nanoimprint of photonic crystals pattern. Finally, used UV lamp was curing of UV glue on the glass. When the 45∘composite photonic crystals structures, the haze was increase to 87.9 %, resulting the short circuit current density and efficiency increasing to 13.96 mA/cm2 and 7.39 %, respectively. Because 45∘composite photonic crystals easy to focus on the point of light lead to the effect of scattering can’t achieve. So, we designs 90∘V-shaped photonic crystals structures to increase scattering. When the 90∘V-shaped photonic crystals structures, the Haze was increase to 93.9 %. Therefore, the short circuit current density and Efficiency increasing to 15.62 mA/cm2 and 8.09 %, respectively. We observed ~35 % enhancement of the short-circuit current density and ~31 % enhancement of the conversion efficiency.


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