Thermal Stress Behavior of Micro- and Nano-Size Aluminum Films

2008 ◽  
Author(s):  
T. Hanabusa ◽  
M. Nishida ◽  
K. Kusaka ◽  
Abarrul Ikram ◽  
Agus Purwanto ◽  
...  
Keyword(s):  
Thermal Stress ◽  
Aluminum Films ◽  
Stress Behavior ◽  
Nano Size

THERMAL STRESS BEHAVIOR IN NANO-SIZE THIN ALUMINUM FILMS

2006 ◽  
Vol 20 (25n27) ◽  
pp. 4691-4696 ◽  
Author(s):  
TAKAO HANABUSA ◽  
KAZUYA KUSAKA ◽  
SHOSO SHINGUBARA ◽  
OSAMI SAKATA
Keyword(s):  
Thin Films ◽  
Thermal Stress ◽  
Synchrotron Radiation ◽  
Thermal Stresses ◽  
In Situ Observation ◽  
Aluminum Films ◽  
Stress Behavior ◽  
Thin Aluminum ◽  
20 Nm ◽  
Nano Size

In-situ observation of thermal stresses in thin films deposited on a silicon substrate was made by synchrotron radiation. Specimens prepared in this experiment were nano-size thin aluminum films with SiO 2 passivation. The thickness of the films was 10 nm, 20 nm and 50 nm. Synchrotron radiation revealed the diffraction intensities for these thin films and make possible to measure stresses in nano-size thin films. Residual stresses in the as-deposited state were tensile. Compressive stresses were developed in a heating cycle up to 300°C and tensile stresses were developed in a cooling cycle. The thermal stresses in the 50 nm film showed linear behavior in the first heating stage from room temperature to 250°C followed by no change in the stress at 300°C, however, linearly behaved in the second cycle. On the other hand, the thermal stresses in 20 nm and 10 nm films almost linearly behaved without any hysteresis in increasing and decreasing temperature cycles. The mechanism of thermal stress behavior in thin films can be explained by strengthening of the nano-size thin films due to inhibition of dislocation source and dislocation motion.

In Situ Observation of Thermal Stress in Nano-Size Thin Aluminum Films

2005 ◽  
Vol 490-491 ◽  
pp. 577-582
Author(s):  
Hanabusa Takao ◽  
Kazuya Kusaka ◽  
Shozo Shingubara ◽  
Osamu Sakata
Keyword(s):  
Thin Films ◽  
Thermal Stress ◽  
Thermal Stresses ◽  
In Situ Observation ◽  
Heating Cycle ◽  
Cooling Cycle ◽  
Aluminum Films ◽  
Thin Aluminum ◽  
Nano Size

In-situ observation of thermal stress in thin films deposited on a silicon substrate was made by synchrotron radiations. The specimens prepared in this experiment were nano-size thin aluminum films with SiO2 passivation. The thickness of the films was 10 nm, 20 nm and 50 nm. Residual stress in the as-deposited state was tensile. Compressive stress was developed in the heating cycle up to 300 oC and tensile stresses developed in the cooling cycle. The thermal stresses in the 50 nm film showed non-linear behavior in the first heating cycle from the room temperature to 300 oC. However, they linearly behaved in the first cooling cycle and the second thermal cycle. On the other hand, the thermal stresses in the 10 nm film behaved almost linearly without any hysteresis in the first and the second thermal cycles. The mechanism of thermal stress behavior of thin films is discussed.

In Situ Observation of Thermal Stress in Nano-Size Thin Aluminum Films

2005 ◽  
pp. 577-582
Author(s):  
Takao Hanabusa ◽  
Kazuya Kusaka ◽  
Shozo Shingubara ◽  
Osami Sakata
Keyword(s):  
Thermal Stress ◽  
In Situ Observation ◽  
Aluminum Films ◽  
Thin Aluminum ◽  
Nano Size

21216 Basic study of thermal stress behavior on laser cleaving by using one-dimensional elastic wave model

2013 ◽  
Vol 2013.19 (0) ◽  
pp. 565-566
Author(s):  
Ryouta Numaguchi ◽  
Akira Chiba ◽  
Souta Matsusaka ◽  
Hirofumi Hidai ◽  
Noboru Morita
Keyword(s):  
Thermal Stress ◽  
Elastic Wave ◽  
Wave Model ◽  
Basic Study ◽  
One Dimensional ◽  
Stress Behavior

scholarly journals Thermal stress behavior in .ALPHA.-alumina fiber reinforced aluminum.

1989 ◽  
Vol 38 (429) ◽  
pp. 623-629 ◽  
Author(s):  
Yasukazu IKEUCHI ◽  
Takao HANABUSA ◽  
Haruo FUJIWARA
Keyword(s):  
Thermal Stress ◽  
Alumina Fiber ◽  
Fiber Reinforced ◽  
Stress Behavior ◽  
Alpha Alumina

Finite Element Stress Characterization of Stacked Die Package for Reliability Improvement and Architecture Optimization

2020 ◽  
Vol 305 ◽  
pp. 198-206
Author(s):  
Yuan Ping Luh ◽  
Jia Fu Jhang ◽  
Huang Li Wang ◽  
Fu Haw Yu ◽  
Chang Hung Tu
Keyword(s):  
Thermal Stress ◽  
Electronic Packaging ◽  
Wafer Level ◽  
Electronic Products ◽  
Storage Devices ◽  
Stress Behavior ◽  
Experiment Method ◽  
Optimization Parameters ◽  
Potential Factor ◽  
Expansion System

Electronic products have been following light, thin, short, small as goals. In recent years, not only do these features have to provide more functionality and reliability. In response to this demand, many new processes such as wafer-level 7 nm euv and electronic packaging solutions have been developed in the market. Stacked wafer technology has been widely used in electronic packaging solutions in a variety of storage devices and electronic products. The accompanying problems and challenges continue to emerge, in which the delamination of the package failure mode leads to the inability of electronic products to operate as the biggest issue. This study is mainly to investigate the thermal stress behavior of the vertical stacking of chip bonds of wafer adhesives to reduce the thickness of the wafer in the stacked wafer structure to Improve package reliability by reducing the amount of deformation Utilize one-half symmetry model and adopt the reflow profile of JESD22-a113 (25 °C ~ 260 °C) As a basis and import into the ansys software for parametric development, Then use the Taguchi experiment method to configure the experimental parameters to explore the optimization parameters. Finally, the experimental results and the delamination results were verified by the Taguchi experiment method, and the stress shrinkage gradient model was introduced to find the next best potential factor for reducing the maximum stress, such as binder material Tg and Young's modulus compensation thermal expansion system. Observe the thermal stress behavior of stacked chips and help provide a reference for providing modified changes during development.

Sign in / Sign up

Export Citation Format

Share Document