scholarly journals Imaging interstitial iron concentrations in boron-doped crystalline silicon using photoluminescence

2008 ◽  
Vol 103 (7) ◽  
pp. 073710 ◽  
Author(s):  
D. Macdonald ◽  
J. Tan ◽  
T. Trupke
Keyword(s):  
Crystalline Silicon ◽  
Boron Doped ◽  
Iron Concentrations

Heavily Boron Doped Crystalline Silicon Films by Plasma Technique

1983 ◽  
Vol 22 (Part 1, No. 7) ◽  
pp. 1222-1222 ◽  
Author(s):  
Yukihiko Yoshida ◽  
Yoshiharu Onuma
Keyword(s):  
Crystalline Silicon ◽  
Silicon Films ◽  
Plasma Technique ◽  
Boron Doped

Evolution of Hydrogen Related Defects in Plasma Hydrogenated Crystalline Silicon under Thermal and Laser Annealing

2005 ◽  
Vol 108-109 ◽  
pp. 211-216
Author(s):  
Yue Ma ◽  
Yue Long Huang ◽  
Reinhart Job ◽  
Wolfgang Düngen ◽  
Wolfgang R. Fahrner
Keyword(s):  
Laser Annealing ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Basic Mechanism ◽  
Hydrogen Atoms ◽  
In Situ Raman Spectroscopy ◽  
In Situ Raman ◽  
First Order Kinetics ◽  
Boron Doped

Boron doped [100]-oriented Cz Si wafers are hydrogenated with a plasma enhanced chemical vapor deposition setup at a substrate temperature of about 260 °C. In-situ Raman spectroscopy is applied on samples under thermal and laser annealing. It is found that different Si-H species have different stabilities. The most stable one is the Si-H bond at the inner surfaces of the platelets. The dissociated energy of Si-H bonds is deduced based on the first order kinetics. It is found that the hydrogen atoms which are released during annealing are trapped again by the platelets and passivate the silicon dangling bonds at the inner surfaces of the platelets or form H2 molecules in the open platelet volume, possibly relating to the basic mechanism of the hydrogen-induced exfoliation of the silicon wafer and the socalled “smart-cut” process.

Hydrogen molecules in boron-doped crystalline silicon

1999 ◽  
Vol 14 (1) ◽  
pp. 77-80 ◽  
Author(s):  
R E Pritchard ◽  
J H Tucker ◽  
R C Newman ◽  
E C Lightowlers
Keyword(s):  
Crystalline Silicon ◽  
Hydrogen Molecules ◽  
Boron Doped

scholarly journals Controlled Pore Formation on Mesoporous Single Crystalline Silicon Nanowires: Threshold and Mechanisms

2015 ◽  
Vol 2015 ◽  
pp. 1-11 ◽  
Author(s):  
Stefan Weidemann ◽  
Maximilian Kockert ◽  
Dirk Wallacher ◽  
Manfred Ramsteiner ◽  
Anna Mogilatenko ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Silicon Nanowires ◽  
Pore Formation ◽  
Gas Adsorption ◽  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Phonon Confinement ◽  
Single Crystalline ◽  
Boron Doped ◽  
Doped Silicon

Silicon nanowires are prepared by the method of the two-step metal-assisted wet chemical etching. We analyzed the structure of solid, rough, and porous nanowire surfaces of boron-doped silicon substrates with resistivities ofρ> 1000 Ωcm,ρ= 14–23 Ωcm, andρ< 0.01 Ωcm by scanning electron microscopy and nitrogen gas adsorption. Silicon nanowires prepared from highly doped silicon reveal mesopores on their surface. However, we found a limit for pore formation. Pores were only formed by etching below a critical H2O2concentration (cH2O2<0.3 M). Furthermore, we determined the pore size distribution dependent on the etching parameters and characterized the morphology of the pores on the nanowire surface. The pores are in the regime of small mesopores with a mean diameter of 9–13 nm. Crystal and surface structure of individual mesoporous nanowires were investigated by transmission electron microscopy. The vibrational properties of nanowire ensembles were investigated by Raman spectroscopy. Heavily boron-doped silicon nanowires are highly porous and the remaining single crystalline silicon nanoscale mesh leads to a redshift and a strong asymmetric line broadening for Raman scattering by optical phonons at 520 cm−1. This redshift,λSi  bulk=520 cm−1  →λSi  nanowire=512 cm−1, hints to a phonon confinement in mesoporous single crystalline silicon nanowires.

scholarly journals Influence of Back Contact Annealing Temperature in the mc-Si Solar Cell Fabrication Process

2021 ◽  
Author(s):  
Aravindan Gurusamy ◽  
S. Sanmugavel ◽  
S. G. Nagarajan ◽  
V. Kesavan ◽  
M. Sriniv ◽  
...  
Keyword(s):  
Annealing Temperature ◽  
Crystalline Silicon ◽  
Solidification Process ◽  
Minority Carrier Lifetime ◽  
Open Circuit ◽  
Fabrication Process ◽  
Back Contact ◽  
Doping Density ◽  
Boron Doped ◽  
Ar Coating

Abstract The boron doped multi-crystalline silicon (mc-Si) ingot was grown using the directional solidification process. Grown ingots were converted into bricks and then to wafers. We have fabricated silicon solar cells from the multi-crystalline silicon wafers. The minority carrier lifetime of the wafers is around 15-25 ms. Annealing was made after back and front contact during the fabrication process. The effect of back contact annealing temperature has been investigated. Annealing the device at 5830C for 5 sec gives better results. Typical open circuit voltage (Voc) of the devices is around ~540-550mV. The best cell had a power conversion efficiency of ~9 % with a typical acceptor doping density ~ 2.35 E+15 per cm3 (The devices reported here do not have AR coating layer, no passivation was done and the surfaces are also not textured).

A Boron Doped Amorphous Silicon Thin-Film Bolometer for Long Wavelength Detection

2002 ◽  
Vol 744 ◽  
Author(s):  
A. Heredia-J ◽  
A. Torres-J ◽  
A. Jaramillo-N ◽  
F.J. De la Hidalga-W ◽  
M. Landa-V.
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Thermal Coefficient ◽  
Silicon Thin Film ◽  
Long Wavelength ◽  
Silicon Nitride Membrane ◽  
Boron Doped ◽  
Wavelength Detection ◽  
Thermal Coefficient Of Resistance

ABSTRACTThe fabrication of a bolometer for infrared detection using a boron doped amorphous silicon (a-Si-B:H) thin film is presented for the first time. This thin film (170 nm) was deposited on a silicon nitride membrane sustained by a frame made of micromachined crystalline silicon in order to improve the thermal isolation. Electrical connectivity to the element was achieved by means of aluminum contact pads. The resultant figures of merit, measured at room temperature, were: electrical conductivity of 1.513×10-3 (Ω-cm)-1, thermal coefficient of resistance of 3.4 %K-1, and the device is sensitive to temperature variations as small as 20 mK.

Sign in / Sign up

Export Citation Format

Share Document