The effect of nitrogen concentration on the band gap and band offsets of HfOxNy gate dielectrics

2008 ◽  
Vol 92 (12) ◽  
pp. 122901 ◽  
Author(s):  
X. J. Wang ◽  
L. D. Zhang ◽  
M. Liu ◽  
J. P. Zhang ◽  
G. He
Keyword(s):  
Band Gap ◽  
Gate Dielectrics ◽  
Nitrogen Concentration ◽  
Band Offsets

Analysis of electronic structure and optical properties of N-doped SiO2 based on DFT calculations

2015 ◽  
Vol 29 (19) ◽  
pp. 1550100 ◽  
Author(s):  
Sui-Shuan Zhang ◽  
Zong-Yan Zhao ◽  
Pei-Zhi Yang
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Band Gap ◽  
Impurity Concentration ◽  
Nitrogen Concentration ◽  
Energy Levels ◽  
Optical Parameter ◽  
Doping Effects ◽  
N Doping ◽  
The Relationship

The crystal structure, electronic structure and optical properties of N-doped [Formula: see text] with different N impurity concentrations were calculated by density function theory within GGA[Formula: see text]+[Formula: see text]U method. The crystal distortion, impurity formation energy, band gap, band width and optical parameter of N-doped [Formula: see text] are closely related with N impurity concentration. Based on the calculated results, there are three new impurity energy levels emerging in the band gap of N-doped [Formula: see text], which determine the electronic structure and optical properties. The variations of optical properties induced by N doping are predominately determined by the unsaturated impurity states, which are more obvious at higher N impurity concentration. In addition, all the doping effects of N in both [Formula: see text]-quartz [Formula: see text] and [Formula: see text]-quartz [Formula: see text] are very similar. According to these findings, one could understand the relationship between nitrogen concentration and optical parameter of [Formula: see text] materials, and design new optoelectrionic Si–O–N compounds.

Effect of composition and chemical bonding on the band gap and band offsets to Si of HfxSi1−xO2 (N) films

2010 ◽  
Vol 107 (5) ◽  
pp. 053701 ◽  
Author(s):  
I. Geppert ◽  
E. Lipp ◽  
R. Brener ◽  
S. Hung ◽  
M. Eizenberg
Keyword(s):  
Band Gap ◽  
Chemical Bonding ◽  
Band Offsets

scholarly journals Q-Factor Performance of 28 nm-Node High-K Gate Dielectric under DPN Treatment at Different Annealing Temperatures

Electronics ◽  
2020 ◽  
Vol 9 (12) ◽  
pp. 2086
Author(s):  
Chii-Wen Chen ◽  
Shea-Jue Wang ◽  
Wen-Ching Hsieh ◽  
Jian-Ming Chen ◽  
Te Jong ◽  
...  
Keyword(s):  
Figure Of Merit ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Nitrogen Concentration ◽  
Point Of View ◽  
Tunneling Effect ◽  
Q Factor ◽  
High K ◽  
Different Temperatures

Q-factor is a reasonable index to investigate the integrity of circuits or devices in terms of their energy or charge storage capabilities. We use this figure of merit to explore the deposition quality of nano-node high-k gate dielectrics by decoupled-plasma nitridation at different temperatures with a fixed nitrogen concentration. This is very important in radio-frequency applications. From the point of view of the Q-factor, the device treated at a higher annealing temperature clearly demonstrates a better Q-factor value. Another interesting observation is the appearance of two troughs in the Q-VGS characteristics, which are strongly related to either the series parasitic capacitance, the tunneling effect, or both.

New Optimazation Guidelines on Nitrogen Concentration in NO Gate Dielectrics for Advanced Logic and DRAM Application

1999 ◽  
Author(s):  
Jon-Wan Jung ◽  
Sung-Kye Park ◽  
Gyu-Han Yoon ◽  
Dae-Gwan Kang ◽  
Young Jong Lee
Keyword(s):  
Gate Dielectrics ◽  
Nitrogen Concentration

Nitrogen partial pressure-dependent Mg concentration, structure, and optical properties of MgxZn1−xO film grown by magnetron sputtering

2007 ◽  
Vol 22 (10) ◽  
pp. 2936-2942 ◽  
Author(s):  
C.X. Cong ◽  
B. Yao ◽  
Y.P. Xie ◽  
G.Z. Xing ◽  
B.H. Li ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Partial Pressure ◽  
Band Gap ◽  
Pressure Ratio ◽  
Nitrogen Concentration ◽  
Cubic Phase ◽  
Nitrogen Partial Pressure ◽  
Wurtzite Phase ◽  
Quartz Substrates ◽  
Partial Pressure Ratio

MgxZn1−xO films were grown on quartz substrates at 773 K by using radio frequency magnetron sputtering with a mixture of argon and nitrogen as sputtering gases. The nitrogen concentration in the mixture is characterized by the nitrogen partial pressure ratio, which is determined by the ratio of nitrogen flow rate to the flow rates of nitrogen and argon. It was found that Mg concentration, structure, and band gap of the MgxZn1−xO film could be tuned by changing the nitrogen partial pressure ratio of the sputtering gases. The Mg concentration in the MgxZn1−xO film increases with increasing nitrogen partial pressure ratio. The MgxZn1−xO film consists of wurtzite phase at the ratios from 0% to 50%, mixture of wurtzite and cubic phases at the ratios between 50% and 83%, and cubic phase at 100%. The band gap of the MgxZn1−xO film with wurtzite and cubic structure increases as the ratio rises. The variation of the structure and band gap is attributed to change of the Mg concentration, which results from loss of the O and Zn atoms during growth process, the former is induced by reaction between N and O, and the latter by re-evaporation of Zn atoms due to high substrate temperature. The mechanism of the loss of the O and Zn atoms is discussed based on thermodynamics.

Band Alignments of High-K Dielectrics on Si and Pt

1999 ◽  
Vol 592 ◽  
Author(s):  
J Robertson ◽  
E Riassi ◽  
J-P Maria ◽  
A I Kingon
Keyword(s):  
Conduction Band ◽  
Gate Dielectrics ◽  
Random Access ◽  
Leakage Currents ◽  
Band Offsets ◽  
Silicon Devices ◽  
High K ◽  
Band Alignments ◽  
High K Materials ◽  
High Dielectric

ABSTRACTMaterials with a high dielectric constant (K) such as tantalum pentoxide (Ta2O5) and barium strontium titanate (BST) are needed for insulators in dynamic random access memory capacitors and as gate dielectrics in future silicon devices. The band offsets of these oxides must be over 1 eV for both electrons and holes, to minimise leakage currents due to Schottky emission. We have calculated the band alignments of many high K materials on Si and metals using the method of charge neutrality levels. Ta2O5 and BST have rather small conduction band offsets on Si, because the band alignments are quite asymmetric. Other wide gap materials Al2O3, Y2O3, ZrO2 and ZrSiO4 are found to have offsets of over 1.5 eV for both electrons and holes, suggesting that these are preferable dielectrics. Zirconates such as BaZrO3 have wider gaps than the titanates, but they still have rather low conduction band offsets on Si. The implications of the results for future generations of MOSFETs and DRAMS are discussed.

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