High crystalline-quality III-V layer transfer onto Si substrate

2008 ◽  
Vol 92 (9) ◽  
pp. 092107 ◽  
Author(s):  
Peng Chen ◽  
Yi Jing ◽  
S. S. Lau ◽  
Dapeng Xu ◽  
Luke Mawst ◽  
...  
1995 ◽  
Vol 67 (10) ◽  
pp. 1390-1392 ◽  
Author(s):  
M. Y. Chern ◽  
H. M. Lin ◽  
C. C. Fang ◽  
J. C. Fan ◽  
Y. F. Chen

1996 ◽  
Vol 102 ◽  
pp. 151-155 ◽  
Author(s):  
G. Kaltsas ◽  
A. Travlos ◽  
A.G. Nassiopoulos ◽  
N. Frangis ◽  
J. Van Landuyt

CrystEngComm ◽  
2015 ◽  
Vol 17 (24) ◽  
pp. 4469-4474 ◽  
Author(s):  
J. Z. Li ◽  
Z. Z. Chen ◽  
Q. Q. Jiao ◽  
Y. L. Feng ◽  
S. Jiang ◽  
...  

The silane-controlled 3D growth led to a high crystalline quality, much strain relaxation and a specular surface for the GaN epilayers on NPSS.


2015 ◽  
Vol 15 (10) ◽  
pp. 4837-4842 ◽  
Author(s):  
J. A. Freitas ◽  
J. C. Culbertson ◽  
N. A. Mahadik ◽  
T. Sochacki ◽  
M. Bockowski ◽  
...  

2011 ◽  
Vol 485 ◽  
pp. 215-218 ◽  
Author(s):  
Hiroki Miyazaki ◽  
Yutaka Adachi ◽  
Isao Sakaguchi ◽  
Takamasa Ishigaki ◽  
Naoki Ohashi

The processes for polishing a ZnO surface were investigated with the aim of establishing a process for obtaining an atomically flat surface with high crystalline quality. The defects in a layer undergoing mechanical polishing were monitored through photoluminescence measurements, and the purity of the polished surface was characterized by SIMS. An atomicallyfishing process.


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