High crystalline quality ZnSe films grown by pulsed laser deposition

1995 ◽  
Vol 67 (10) ◽  
pp. 1390-1392 ◽  
Author(s):  
M. Y. Chern ◽  
H. M. Lin ◽  
C. C. Fang ◽  
J. C. Fan ◽  
Y. F. Chen
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Crystalline Quality ◽  
High Crystalline Quality

Crystalline quality of ZnSe thin films grown on GaAs by pulsed laser deposition in He and Ar ambients

2001 ◽  
Vol 388 (1-2) ◽  
pp. 189-194 ◽  
Author(s):  
Tapas Ganguli ◽  
M. Vedvyas ◽  
P. Bhattacharya ◽  
L.M. Kukreja ◽  
Alka Ingale ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Crystalline Quality ◽  
Znse Thin Films

Imprint of La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O Heterostructures Grown by Pulsed Laser Deposition

1994 ◽  
Vol 361 ◽  
Author(s):  
J. Lee ◽  
R. Ramesh ◽  
V.G. Keramidas
Keyword(s):  
Pulsed Laser Deposition ◽  
Bismuth Titanate ◽  
Polarization State ◽  
Pulsed Laser ◽  
Hysteresis Loops ◽  
Pronounced Effect ◽  
The Other ◽  
Laser Deposition ◽  
Switching Behavior ◽  
Crystalline Quality

ABSTRACTLa-Sr-Co-O(LSCO)/Pb-La-Zr-Ti-O(PLZT)/La-Sr-Co-O heterostructures with different crystalline quality have been grown on LaAlO3 and Si with a bismuth titanate template layer. Imprint of the heterostructures are investigated in comparison with fatigue and retention. Oxygen ambient during cooling the heterostructures was also varied to investigate the imprint. With consideration of the switching behavior caused by imprint, imprint behavior was deconvoluted from fatigue and retention. In epitaxial PLZT capacitors grown on LaAlO3, imprint behavior was found to be significantly dependent on the oxygen ambient. As the oxygen ambient became more reducing, the capacitors developed more voltage asymmetry in hysteresis loops and a more preferred polarization state directed towards the top electrode. On the other hand, oriented PLZT capacitors exhibited less pronounced effect of the oxygen ambient on the imprint behavior.

Epitaxial Growth of Magnetic Nickel Nanodots by Pulsed Laser Deposition

2002 ◽  
Vol 755 ◽  
Author(s):  
H. Zhou ◽  
D. Kumar ◽  
A. Kvit ◽  
A. Tiwari ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Titanium Nitride ◽  
Pulsed Laser Deposition ◽  
Orientation Relationship ◽  
Deposition Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Crystalline Quality ◽  
Transmission Electron

ABSTRACTEpitaxial nickel magnetic nanodots were obtained by pulsed laser deposition (PLD) technique on Si (100) substrate using epitaxial TiN film as the template. Characterization methods include: high-resolution transmission electron microscopy (HRTEM), scanning transmission electron microscopy (STEM) Z-contrast imaging, selected area electron diffraction (SAD), and X-ray diffraction (XRD) techniques. The results showed that as long as no coalescence between neighboring dots occurred, the dots are all single crystal. The predominant orientation relationship observed is Ni (100) // TiN (100) // Si (100), the so-called “cube-on-cube” orientation relationship. Other rotational orientation relationships, where the nickel crystal rotates an angle with respect to TiN (011) directions, were also observed. The dots are in faceted island shapes, bounded by (111) and (001) facets. The actual size of dots varies from a few nanometers to tens of nanometers, depending on the deposition time and temperature. The shape of a certain dot was found to be closely related to its epitaxial orientation. Effects of deposition temperature and template crystalline quality were studied. It was found that deposition temperature in a certain range does not have much influence on the epitaxial orientation of dots, while the crystalline quality of titanium nitride (the underlying template) is primarily responsible for the orientation variation. At the optimum condition, samples with a large fraction of cube-on-cube orientated nickel dots could be obtained in a rather wide temperature range (up to 250 °C), as evidenced by the strong reflections from both SAD and XRD. Samples containing more than one layer of nickel and titanium nitride matrix were also studied. The results showed that the degree of orientation perfection could be greatly improved by decreasing the size of dots.

Influence of oxygen background pressure on crystalline quality of SrTiO3 films grown on MgO by pulsed laser deposition

1997 ◽  
Vol 71 (12) ◽  
pp. 1709-1711 ◽  
Author(s):  
R. Kalyanaraman ◽  
R. D. Vispute ◽  
S. Oktyabrsky ◽  
K. Dovidenko ◽  
K. Jagannadham ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Crystalline Quality

XRD study on the effect of the deposition condition on pulsed laser deposition of ZnO films

Open Physics ◽  
2008 ◽  
Vol 6 (3) ◽  
Author(s):  
Bao Man ◽  
Hong Xi ◽  
Chuan Chen ◽  
Mei Liu ◽  
Jing Wei
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Deposition Temperature ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Crystalline Quality ◽  
Zno Thin Films ◽  
Laser Source ◽  
Zno Films

AbstractUsing a pulsed laser deposition (PLD) process on a ZnO target in an oxygen atmosphere, thin films of this material have been deposited on Si(111) substrates. An Nd: YAG pulsed laser with a wavelength of 1064 nm was used as the laser source. The influences of the deposition temperature, laser energy, annealing temperature and focus lens position on the crystallinity of ZnO films were analyzed by X-ray diffraction. The results show that the ZnO thin films obtained at the deposition temperature of 400°C and the laser energy of 250 mJ have the best crystalline quality in our experimental conditions. The ZnO thin films fabricated at substrate temperature 400°C were annealed at the temperatures from 400°C to 800°C in an atmosphere of N2. The results show that crystalline quality has been improved by annealing, the optimum temperature being 600°C. The position of the focusing lens has a strong influence on pulsed laser deposition of the ZnO thin films and the optimum position is 59.5 cm from the target surface for optics with a focal length of 70 cm.

Epitaxial Growth of ZnTe and ZnSe on GaAs by Pulsed Laser Deposition

1992 ◽  
Vol 268 ◽  
Author(s):  
Y. Rajakarunanayake ◽  
Y. Luo ◽  
A. Aydinli ◽  
N Lavalle ◽  
A. Compaan
Keyword(s):  
Pulsed Laser Deposition ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Ultra High Vacuum ◽  
Laser Deposition ◽  
Near Band Edge ◽  
Epitaxial Layers ◽  
High Crystalline Quality ◽  
Growth Technique ◽  
Edge Features

ABSTRACTWe report the successful growth of ZnTe and ZnSe epitaxial layers on GaAs by pulsed laser deposition. A frequency doubled Nd:YAG laser was used to ablate/evaporate II-VI bulk targets and pressed powder targets in an ultra high vacuum enclosure. For typical growth temperatures in the range 200°-400°C x-ray analysis of the layers revealed sharp <100> peaks with no evidence of growth in other orientations. Polarization dependent Raman spectroscopy was also used to further characterize the epitaxial layers, by verifying the selection rules for backscattering from <100> oriented films. The low temperature photoluminescence spectra show distinct near-band-edge features indicating high crystalline quality. The photoluminescence of the films grown from bulk targets was superior to that of films grown from pressed powder targets, indicating that the use of high purity bulk targets is critical. Our results indicate that pulsed laser deposition is a promising new growth technique for the fabrication of II-VI epitaxial layers with unique advantages.

Microanalysis of silicate glass films grown on α-Al2O3 by pulsed-laser deposition

1993 ◽  
Vol 51 ◽  
pp. 438-439
Author(s):  
Michael P. Mallamaci ◽  
James Bentley ◽  
C. Barry Carter
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ceramic Materials ◽  
Laser Deposition ◽  
Triple Junctions ◽  
Ion Milling ◽  
Multicomponent Oxides ◽  
Glass Films

Glass-oxide interfaces play important roles in developing the properties of liquid-phase sintered ceramics and glass-ceramic materials. Deposition of glasses in thin-film form on oxide substrates is a potential way to determine the properties of such interfaces directly. Pulsed-laser deposition (PLD) has been successful in growing stoichiometric thin films of multicomponent oxides. Since traditional glasses are multicomponent oxides, there is the potential for PLD to provide a unique method for growing amorphous coatings on ceramics with precise control of the glass composition. Deposition of an anorthite-based (CaAl2Si2O8) glass on single-crystal α-Al2O3 was chosen as a model system to explore the feasibility of PLD for growing glass layers, since anorthite-based glass films are commonly found in the grain boundaries and triple junctions of liquid-phase sintered α-Al2O3 ceramics.Single-crystal (0001) α-Al2O3 substrates in pre-thinned form were used for film depositions. Prethinned substrates were prepared by polishing the side intended for deposition, then dimpling and polishing the opposite side, and finally ion-milling to perforation.

Pulsed laser deposition of relaxor ferroelectric films

1998 ◽  
Vol 08 (PR9) ◽  
pp. Pr9-261-Pr9-264
Author(s):  
M. Tyunina ◽  
J. Levoska ◽  
A. Sternberg ◽  
V. Zauls ◽  
M. Kundzinsh ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Relaxor Ferroelectric ◽  
Laser Deposition ◽  
Ferroelectric Films

Pulsed laser deposition of PbMg1/3Nb2/3O3 thin films and PbMg1/3Nb2/3O3/PbTiO3 multilayers

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-65-Pr11-69
Author(s):  
N. Lemée ◽  
H. Bouyanfif ◽  
J. L. Dellis ◽  
M. El Marssi ◽  
M. G. Karkut ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition
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