Hysteresis-type current-voltage characteristics of indium tin oxide/poly (3,4-ethylenedioxythiophene) doped with poly (4-styrenesulfonate)/indium tin oxide devices

2008 ◽  
Vol 103 (6) ◽  
pp. 063702 ◽  
Author(s):  
Yow-Jon Lin
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Current Voltage ◽  
Current Voltage Characteristics

scholarly journals Transparent p-n Heterojunction Thin Film Diodes

2001 ◽  
Vol 666 ◽  
Author(s):  
M. K. Jayaraj ◽  
A. D. Draeseke ◽  
J. Tate ◽  
R. L. Hoffman ◽  
J. F. Wager
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Interfacial Layer ◽  
Optical Transmission ◽  
Visible Region ◽  
Reverse Current ◽  
Total Thickness ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Diode Current

ABSTRACTTransparent p-n heterojunction diodes are fabricated using p-type CuYO2:Ca and n-type ZnO:Al thin films on a glass substrate coated with indium-tin oxide (ITO). The contact between the n-ZnO:Al / p-CuYO2:Ca heterojunction is found to be rectifying, while the ITO / ZnO:Al contact is ohmic. The typical ratio of forward to reverse current is 15 in the range -3 to 3V. The diode current-voltage characteristics are dominated by the flow of space charge limited current, which is ascribed to the existence of an insulating ZnO interfacial layer. The diode structure has a total thickness of 0.85 μm and an optical transmission of 40%-50% in the visible region.

scholarly journals Wavelength dependent photosensitivity modulation of Aluminium/Lead sulphide/Indium tin oxide back-to-back diode

2020 ◽  
Vol 22 ◽  
pp. 1-7
Author(s):  
Abhijit Banerjee ◽  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Electronic Devices ◽  
Lead Sulphide ◽  
Carrier Generation ◽  
Current Voltage ◽  
Photo Sensor ◽  
Capacitance Voltage ◽  
Definite Improvement ◽  
Current Voltage Characteristics

The photosensitivity of aluminium (Al)/lead sulphide (PbS)/indium tin oxide (ITO) thin layered structure is investigated considering the photon wavelength dependent current-voltage and capacitance-voltage characteristics of the device. The current-voltage characteristics of the test structure are analyzed adopting the back-to-back Schottky barrier diode model. The diode possesses low dark current in contrast to the high value of photocurrents measured under different illumination wavelengths. The change in photocurrents with different illumination wavelengths clearly indicates the change in photo-sensitivity of the device. The capacitance-voltage characteristics of Al/PbS/ITO structure demonstrate a definite improvement of the device capacitance with the higher wavelength exposures. The matter is explained in terms of the additional capacitance owing to the excess carrier generation within the device under illumination. The photosensitivity modulation of the device can be exploited in photo-sensor or photo-detector applications in various electronic devices.

scholarly journals Arrayed CdTeMicrodots and Their Enhanced Photodetectivity via Piezo-Phototronic Effect

Nanomaterials ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 178 ◽  
Author(s):  
Dong Lee ◽  
G. Mohan Kumar ◽  
P. Ilanchezhiyan ◽  
Fu Xiao ◽  
Sh.U. Yuldashev ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Normal Condition ◽  
Indium Tin Oxide ◽  
Schottky Barrier Height ◽  
Glass Substrates ◽  
Transparent Conducting ◽  
Current Voltage ◽  
Ito Glass ◽  
Ultrahigh Sensitivity ◽  
Current Voltage Characteristics

In this paper, a photodetector based on arrayed CdTe microdots was fabricated on Bi coated transparent conducting indium tin oxide (ITO)/glass substrates. Current-voltage characteristics of these photodetectors revealed an ultrahigh sensitivity under stress (in the form of force through press) while compared to normal condition. The devices exhibited excellent photosensing properties with photoinduced current increasing from 20 to 76 μA cm−2 under stress. Furthermore, the photoresponsivity of the devices also increased under stress from 3.2 × 10−4 A/W to 5.5 × 10−3 A/W at a bias of 5 V. The observed characteristics are attributed to the piezopotential induced change in Schottky barrier height, which actually results from the piezo-phototronic effect. The obtained results also demonstrate the feasibility in realization of a facile and promising CdTe microdots-based photodetector via piezo-phototronic effect.

Current-voltage behavior in hole-only single-carrier devices with self-assembling dipole molecules on indium tin oxide anodes

2006 ◽  
Vol 89 (26) ◽  
pp. 263501 ◽  
Author(s):  
Chimed Ganzorig ◽  
Masaru Sakomura ◽  
Kazuyoshi Ueda ◽  
Masamichi Fujihira
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Single Carrier ◽  
Self Assembling ◽  
Current Voltage

scholarly journals Reduced Graphene Oxide Supported Cobalt-Calcium Phosphate Composite for Electrochemical Water Oxidation

Catalysts ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 960
Author(s):  
Keunyoung Lee ◽  
Wonseok Yang ◽  
Eunji Pyo ◽  
Hyebin Choi ◽  
Yeona Cha ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Calcium Phosphate ◽  
Reduced Graphene Oxide ◽  
Amorphous Phase ◽  
Indium Tin Oxide ◽  
Water Oxidation ◽  
Current Voltage ◽  
Reduced Graphene ◽  
Shoulder Peak ◽  
Current Voltage Characteristics

We report the oxygen evolution reaction (OER) catalyst composed of cobalt–calcium phosphate on reduced graphene oxide (CoCaP/rGO). Our catalyst is prepared by the anodic electrolysis of calcium phosphate/rGO mixture loaded on indium-tin-oxide (ITO) in Co2+ aqueous solution. TEM, XPS and XRD experiments confirm that the crystal phase of calcium phosphate (CaP) is transferred into an amorphous phase of calcium oxide with phosphate (5.06 at%) after anodic electrolysis. Additionally, the main cation component of calcium is replaced by cobalt ion. The current–voltage characteristics of CoCaP/rGO showed a shoulder peak at 1.10 V vs. NHE, which originated from Co2+ to higher oxidation states (Co3+ or Co4+) and a strong wave from water oxidation higher +1.16 V vs. NHE at neutral condition (pH 7). CoCaP and CoCaP/rGO showed 4.8 and 10 mA/cm2 at 0.47 V of overpotential, respectively. The enhanced OER catalytic activity of CoCaP/rGO arises from the synergetic interaction between the amorphous phase of CoCaP and electric conducting graphene sheets.

scholarly journals Fabrications of Hetero-Junction Schottky Diodes by Electrodeposition of Nano-Structured CuInSe2 Materials Using Different Upper Electrodes

Coatings ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 266
Author(s):  
Jing Liu ◽  
Kuo-Wei Liu ◽  
Mau-Phon Houng ◽  
Cheng-Fu Yang
Keyword(s):  
Aluminum Oxide ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Anodic Aluminum Oxide ◽  
Schottky Diodes ◽  
Electrodeposition Method ◽  
Anodic Aluminum ◽  
Junction Device ◽  
Current Voltage ◽  
Negative Electrodes

In this study, CuInSe2 (CIS) films (CIS-TFs) and nanorods (CIS-NRs) were successfully deposited on Mo/glass and p+-silicon (p+-Si) using an electrodeposition method. Anodic aluminum oxide (AAO) was used as the template when the CIS-NRs were deposited. Pt, indium tin oxide (ITO), and Ag were deposited as the upper electrodes using a sputtering method to form the hetero-junction devices of Pt/CIS-NRs/p+-Si, ITO/CIS-NRs/p+-Si, ITO/CIS-TF/Mo/glass, and Ag/CIS-NRs/p+-Si, respectively. When p+-Si was used as the substrate, Al was deposited on p+-Si to form negative electrodes for the devices of Pt/CIS-NRs/p+-Si, ITO/CIS-NRs/p+-Si, and Ag/CIS-NRs/p+-Si. The current–voltage properties of all the hetero-junction devices were measured and we found that the hetero-junction of ITO/CIS-NRs/p+-Si, ITO/CIS-TF/Mo/glass, and Ag/CIS-NRs/p+-Si devices revealed the properties of Schottky diodes but the hetero-junction device of Pt/CIS-NRs/p+-Si device did not. The reason for the cause of the differences between these hetero-junction devices was investigated for this study.

Electrical Characteristics Of The Transparent Conductive Oxide / p-a-Si:H Interface

1996 ◽  
Vol 426 ◽  
Author(s):  
Stephan Guse ◽  
Dimitrios Peros ◽  
Michael Wagner ◽  
Markus Böhm
Keyword(s):  
Contact Resistance ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Contact Region ◽  
Transparent Conductive Oxide ◽  
Boron Doped ◽  
Current Voltage ◽  
Bridge Structures ◽  
Direct Sensing ◽  
Hydrogenated Amorphous

AbstractThe current-voltage (I-V) characteristics of the interfaces between boron-doped hydrogenated amorphous silicon (p-a-Si:H) and transparent conductive oxides (TCOs) such as tin oxide (SnO2) and indium tin oxide (ITO) are experimentally determined. The measurements are performed on especially developed Kelvin cross bridge structures which allow the direct sensing of the contact region. All contacts exhibit for high dopant concentrations an almost linear I-V characteristic. The values of the contact resistance depend on the TCO type and range between 0.5 and 4 Ω· cm2 at 25°C. Gradual reduction of the boron doping level leads to a remarkable increase of the contact resistance and finally to a rectifying behavior. The results indicate that tunnelling across the interface contributes significantly to the current transport. This conclusion is also supported by the behavior of the I-V characteristics at low temperatures. Regarding degradation of the contacts a systematic reduction of the contact resistance is observed after ageing them for 1000 hours at 80°C.

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