Current-voltage behavior in hole-only single-carrier devices with self-assembling dipole molecules on indium tin oxide anodes

2006 ◽  
Vol 89 (26) ◽  
pp. 263501 ◽  
Author(s):  
Chimed Ganzorig ◽  
Masaru Sakomura ◽  
Kazuyoshi Ueda ◽  
Masamichi Fujihira
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Single Carrier ◽  
Self Assembling ◽  
Current Voltage

Modulation of indium–tin oxide work function by a versatile self-assembled monolayer measured with the scanning Kelvin nanoprobe

2011 ◽  
Vol 89 (12) ◽  
pp. 1512-1518 ◽  
Author(s):  
Christophe Blaszykowski ◽  
Larissa-Emilia Cheran ◽  
Michael Thompson
Keyword(s):  
Work Function ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Light Emitting Diode ◽  
Critical Role ◽  
Protective Layer ◽  
Organic Coating ◽  
Hole Injection ◽  
Self Assembled Monolayer ◽  
Self Assembling

In molecular optoelectronics, high-quality contacts at electrode|organics interfaces are crucial for charge carriers to efficiently flow through and therefore play a critical role on device performance. Electrode surface morphology, adhesibility, wettability, and work function are thus many parameters that must be accurately controlled, which is achievable using self-assembling monolayer (SAM) surface chemistry. Herein, we employ this technique to alter the electronic and surface energy-related properties of indium–tin oxide (ITO). In comparison to unmodified ITO, the newly introduced SAM-derivatized surface exhibits limited wettability and considerably higher work function (ΔΦ = ~1.2 eV). Several applications are proposed for this organic coating, notably at the anode of organic light-emitting diode (OLED) devices for decreasing the hole injection barrier or as an atmospherically stable protective layer in the coatings industry.

scholarly journals Fabrications of Hetero-Junction Schottky Diodes by Electrodeposition of Nano-Structured CuInSe2 Materials Using Different Upper Electrodes

Coatings ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 266
Author(s):  
Jing Liu ◽  
Kuo-Wei Liu ◽  
Mau-Phon Houng ◽  
Cheng-Fu Yang
Keyword(s):  
Aluminum Oxide ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Anodic Aluminum Oxide ◽  
Schottky Diodes ◽  
Electrodeposition Method ◽  
Anodic Aluminum ◽  
Junction Device ◽  
Current Voltage ◽  
Negative Electrodes

In this study, CuInSe2 (CIS) films (CIS-TFs) and nanorods (CIS-NRs) were successfully deposited on Mo/glass and p+-silicon (p+-Si) using an electrodeposition method. Anodic aluminum oxide (AAO) was used as the template when the CIS-NRs were deposited. Pt, indium tin oxide (ITO), and Ag were deposited as the upper electrodes using a sputtering method to form the hetero-junction devices of Pt/CIS-NRs/p+-Si, ITO/CIS-NRs/p+-Si, ITO/CIS-TF/Mo/glass, and Ag/CIS-NRs/p+-Si, respectively. When p+-Si was used as the substrate, Al was deposited on p+-Si to form negative electrodes for the devices of Pt/CIS-NRs/p+-Si, ITO/CIS-NRs/p+-Si, and Ag/CIS-NRs/p+-Si. The current–voltage properties of all the hetero-junction devices were measured and we found that the hetero-junction of ITO/CIS-NRs/p+-Si, ITO/CIS-TF/Mo/glass, and Ag/CIS-NRs/p+-Si devices revealed the properties of Schottky diodes but the hetero-junction device of Pt/CIS-NRs/p+-Si device did not. The reason for the cause of the differences between these hetero-junction devices was investigated for this study.

scholarly journals Transparent p-n Heterojunction Thin Film Diodes

2001 ◽  
Vol 666 ◽  
Author(s):  
M. K. Jayaraj ◽  
A. D. Draeseke ◽  
J. Tate ◽  
R. L. Hoffman ◽  
J. F. Wager
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Interfacial Layer ◽  
Optical Transmission ◽  
Visible Region ◽  
Reverse Current ◽  
Total Thickness ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Diode Current

ABSTRACTTransparent p-n heterojunction diodes are fabricated using p-type CuYO2:Ca and n-type ZnO:Al thin films on a glass substrate coated with indium-tin oxide (ITO). The contact between the n-ZnO:Al / p-CuYO2:Ca heterojunction is found to be rectifying, while the ITO / ZnO:Al contact is ohmic. The typical ratio of forward to reverse current is 15 in the range -3 to 3V. The diode current-voltage characteristics are dominated by the flow of space charge limited current, which is ascribed to the existence of an insulating ZnO interfacial layer. The diode structure has a total thickness of 0.85 μm and an optical transmission of 40%-50% in the visible region.

Electrical Characteristics Of The Transparent Conductive Oxide / p-a-Si:H Interface

1996 ◽  
Vol 426 ◽  
Author(s):  
Stephan Guse ◽  
Dimitrios Peros ◽  
Michael Wagner ◽  
Markus Böhm
Keyword(s):  
Contact Resistance ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Contact Region ◽  
Transparent Conductive Oxide ◽  
Boron Doped ◽  
Current Voltage ◽  
Bridge Structures ◽  
Direct Sensing ◽  
Hydrogenated Amorphous

AbstractThe current-voltage (I-V) characteristics of the interfaces between boron-doped hydrogenated amorphous silicon (p-a-Si:H) and transparent conductive oxides (TCOs) such as tin oxide (SnO2) and indium tin oxide (ITO) are experimentally determined. The measurements are performed on especially developed Kelvin cross bridge structures which allow the direct sensing of the contact region. All contacts exhibit for high dopant concentrations an almost linear I-V characteristic. The values of the contact resistance depend on the TCO type and range between 0.5 and 4 Ω· cm2 at 25°C. Gradual reduction of the boron doping level leads to a remarkable increase of the contact resistance and finally to a rectifying behavior. The results indicate that tunnelling across the interface contributes significantly to the current transport. This conclusion is also supported by the behavior of the I-V characteristics at low temperatures. Regarding degradation of the contacts a systematic reduction of the contact resistance is observed after ageing them for 1000 hours at 80°C.

scholarly journals Wavelength dependent photosensitivity modulation of Aluminium/Lead sulphide/Indium tin oxide back-to-back diode

2020 ◽  
Vol 22 ◽  
pp. 1-7
Author(s):  
Abhijit Banerjee ◽  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Electronic Devices ◽  
Lead Sulphide ◽  
Carrier Generation ◽  
Current Voltage ◽  
Photo Sensor ◽  
Capacitance Voltage ◽  
Definite Improvement ◽  
Current Voltage Characteristics

The photosensitivity of aluminium (Al)/lead sulphide (PbS)/indium tin oxide (ITO) thin layered structure is investigated considering the photon wavelength dependent current-voltage and capacitance-voltage characteristics of the device. The current-voltage characteristics of the test structure are analyzed adopting the back-to-back Schottky barrier diode model. The diode possesses low dark current in contrast to the high value of photocurrents measured under different illumination wavelengths. The change in photocurrents with different illumination wavelengths clearly indicates the change in photo-sensitivity of the device. The capacitance-voltage characteristics of Al/PbS/ITO structure demonstrate a definite improvement of the device capacitance with the higher wavelength exposures. The matter is explained in terms of the additional capacitance owing to the excess carrier generation within the device under illumination. The photosensitivity modulation of the device can be exploited in photo-sensor or photo-detector applications in various electronic devices.

scholarly journals Arrayed CdTeMicrodots and Their Enhanced Photodetectivity via Piezo-Phototronic Effect

Nanomaterials ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 178 ◽  
Author(s):  
Dong Lee ◽  
G. Mohan Kumar ◽  
P. Ilanchezhiyan ◽  
Fu Xiao ◽  
Sh.U. Yuldashev ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Normal Condition ◽  
Indium Tin Oxide ◽  
Schottky Barrier Height ◽  
Glass Substrates ◽  
Transparent Conducting ◽  
Current Voltage ◽  
Ito Glass ◽  
Ultrahigh Sensitivity ◽  
Current Voltage Characteristics

In this paper, a photodetector based on arrayed CdTe microdots was fabricated on Bi coated transparent conducting indium tin oxide (ITO)/glass substrates. Current-voltage characteristics of these photodetectors revealed an ultrahigh sensitivity under stress (in the form of force through press) while compared to normal condition. The devices exhibited excellent photosensing properties with photoinduced current increasing from 20 to 76 μA cm−2 under stress. Furthermore, the photoresponsivity of the devices also increased under stress from 3.2 × 10−4 A/W to 5.5 × 10−3 A/W at a bias of 5 V. The observed characteristics are attributed to the piezopotential induced change in Schottky barrier height, which actually results from the piezo-phototronic effect. The obtained results also demonstrate the feasibility in realization of a facile and promising CdTe microdots-based photodetector via piezo-phototronic effect.

scholarly journals Photoelectrochemical Properties of Supported on -Based Thin Films Converted from Self-Assembled Hydrogen Titanate Nanotube Powders

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Kyung-Jong Noh ◽  
Hyo-Jin Oh ◽  
Bo-Ra Kim ◽  
Sang-Chul Jung ◽  
Wooseung Kang ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Oxide Glass ◽  
Spherical Nanoparticles ◽  
Self Assembling ◽  
Heat Treated ◽  
Current Voltage ◽  
Dipping Process ◽  
Hydrogen Titanate ◽  
Crystallinity Changes

A photoanode was fabricated using hematite (α-Fe2O3) nanoparticles which had been held in a thin film of hydrogen titanate nanotubes (H-TiNT), synthesized by repetitive self-assembling method on FTO (fluorine-doped tin oxide) glass, which were incorporated via dipping process in aqueous Fe(NO3)3solution. Current voltage (I-V) electrochemical properties of the photoanode heat-treated at 500°C for 10 min in air were evaluated under ultraviolet-visible light irradiation. Microstructure and crystallinity changes were also investigated. The prepared Fe2O3/H-TiNT/FTO composite thin film exhibited about threefold as much photocurrent as the Fe2O3/FTO film. The improvement in photocurrent was considered to be caused by reduced recombination of electrons and holes, with an appropriate amount of Fe2O3spherical nanoparticles supported on the H-TiNT/FTO film. Nanosized spherical Fe2O3particles with about 65 wt% on the H-TiNT/FTO film showed best performance in our study.

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