scholarly journals Arrayed CdTeMicrodots and Their Enhanced Photodetectivity via Piezo-Phototronic Effect

Nanomaterials ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 178 ◽  
Author(s):  
Dong Lee ◽  
G. Mohan Kumar ◽  
P. Ilanchezhiyan ◽  
Fu Xiao ◽  
Sh.U. Yuldashev ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Normal Condition ◽  
Indium Tin Oxide ◽  
Schottky Barrier Height ◽  
Glass Substrates ◽  
Transparent Conducting ◽  
Current Voltage ◽  
Ito Glass ◽  
Ultrahigh Sensitivity ◽  
Current Voltage Characteristics

In this paper, a photodetector based on arrayed CdTe microdots was fabricated on Bi coated transparent conducting indium tin oxide (ITO)/glass substrates. Current-voltage characteristics of these photodetectors revealed an ultrahigh sensitivity under stress (in the form of force through press) while compared to normal condition. The devices exhibited excellent photosensing properties with photoinduced current increasing from 20 to 76 μA cm−2 under stress. Furthermore, the photoresponsivity of the devices also increased under stress from 3.2 × 10−4 A/W to 5.5 × 10−3 A/W at a bias of 5 V. The observed characteristics are attributed to the piezopotential induced change in Schottky barrier height, which actually results from the piezo-phototronic effect. The obtained results also demonstrate the feasibility in realization of a facile and promising CdTe microdots-based photodetector via piezo-phototronic effect.

scholarly journals Transparent p-n Heterojunction Thin Film Diodes

2001 ◽  
Vol 666 ◽  
Author(s):  
M. K. Jayaraj ◽  
A. D. Draeseke ◽  
J. Tate ◽  
R. L. Hoffman ◽  
J. F. Wager
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Interfacial Layer ◽  
Optical Transmission ◽  
Visible Region ◽  
Reverse Current ◽  
Total Thickness ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Diode Current

ABSTRACTTransparent p-n heterojunction diodes are fabricated using p-type CuYO2:Ca and n-type ZnO:Al thin films on a glass substrate coated with indium-tin oxide (ITO). The contact between the n-ZnO:Al / p-CuYO2:Ca heterojunction is found to be rectifying, while the ITO / ZnO:Al contact is ohmic. The typical ratio of forward to reverse current is 15 in the range -3 to 3V. The diode current-voltage characteristics are dominated by the flow of space charge limited current, which is ascribed to the existence of an insulating ZnO interfacial layer. The diode structure has a total thickness of 0.85 μm and an optical transmission of 40%-50% in the visible region.

scholarly journals Wavelength dependent photosensitivity modulation of Aluminium/Lead sulphide/Indium tin oxide back-to-back diode

2020 ◽  
Vol 22 ◽  
pp. 1-7
Author(s):  
Abhijit Banerjee ◽  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Electronic Devices ◽  
Lead Sulphide ◽  
Carrier Generation ◽  
Current Voltage ◽  
Photo Sensor ◽  
Capacitance Voltage ◽  
Definite Improvement ◽  
Current Voltage Characteristics

The photosensitivity of aluminium (Al)/lead sulphide (PbS)/indium tin oxide (ITO) thin layered structure is investigated considering the photon wavelength dependent current-voltage and capacitance-voltage characteristics of the device. The current-voltage characteristics of the test structure are analyzed adopting the back-to-back Schottky barrier diode model. The diode possesses low dark current in contrast to the high value of photocurrents measured under different illumination wavelengths. The change in photocurrents with different illumination wavelengths clearly indicates the change in photo-sensitivity of the device. The capacitance-voltage characteristics of Al/PbS/ITO structure demonstrate a definite improvement of the device capacitance with the higher wavelength exposures. The matter is explained in terms of the additional capacitance owing to the excess carrier generation within the device under illumination. The photosensitivity modulation of the device can be exploited in photo-sensor or photo-detector applications in various electronic devices.

scholarly journals А New Method of Obtaining Transparent Conducting Films of Indium (III) Oxide and Indium-Tin Oxide

2021 ◽  
pp. 45-58
Author(s):  
Natalia P. Fadeeva ◽  
Svetlana V. Saikova ◽  
Elena V. Pikurova ◽  
Anton S. Voronin ◽  
Yuri V. Fadeev ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Surface Resistance ◽  
Exchange Resin ◽  
Anion Exchange Resin ◽  
Glass Substrates ◽  
Transparent Conducting Films ◽  
Transparent Conducting ◽  
Spray Method ◽  
Centrifugation Method

In the work, sedimentation-stable sols of indium (III) and tin (IV) hydroxides were obtained by the Anion Resin Exchange Precipitation, which consists of the exchange reaction between the OH ions of the anion exchange resin and the anions of metal-containing solutions. The synthesized hydrosols were used to obtain conducting films of indium (III) In2O3 oxide and indium oxide doped with Tin In2O3: Sn, with a surface resistance of 4 kOhm/sq, thicknesses of 200–500 nm and a transparency of more than 85 %. The modes of applying precursors to glass substrates by the modified spray method and centrifugation method are selected. Films were studied using XRD, SEM, optical microscopy and spectrophotometry

Effect of Sc Doping on Ferroelectric and Dielectric Properties of Bi0.9La0.1FeO3 Thin Film by Sol-Gel Process

2012 ◽  
Vol 538-541 ◽  
pp. 78-82
Author(s):  
Xiao Yan Zhang ◽  
Xi Wei Qi ◽  
Jian Quan Qi ◽  
Xuan Wang ◽  
Huan Huan Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Glass Substrates ◽  
Ito Glass ◽  
Sol Gel Process

Pure Bi0.9La0.1Fe1-xScxO3 (x = 0, 0.05, 0.10, 0.15, 0.20) (BLFSO) thin films were deposited on conductive indium tin oxide (ITO)/glass substrates through a simple sol-gel process. The effect of Sc doping on the XRD, microstructure, dielectric and ferroelectric properties of BLFO films was studied. Compared to counterparts of Bi0.9La0.1FeO3 (BLFO) film, the grain refinement of all films is obvious. When the value of Sc is 0.15, the double remanent polarization 2Pr is effectively enhanced with the extreme value of 17.7µC/cm2. The dielectric constant exhibits a trends of increase firstly and then decrease with the increase amount of scandium level.

Determination of Thickness of PZO Films Deposited on ITO Glass Substrates

2013 ◽  
Vol 537 ◽  
pp. 161-164
Author(s):  
Xue Jiao Li ◽  
Cheng Zhang ◽  
Na Zhang
Keyword(s):  
Film Thickness ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Glass Substrates ◽  
Testing Method ◽  
Ito Glass ◽  
Microhardness Testing ◽  
Deposited Films

PZO (PbZrO3) coatings with different thicknesses were deposited onto Indium Tin Oxide ITO glass substrates at room temperature by magnetron sputtering technique. UV-Vis absorption spectra method and microhardness testing method were used to measure the thickness of coating. It was proved that the measuring results of film thickness by two kinds of methods were equivalent, and either one method can be alternatively used to determine the thickness of deposited films.

scholarly journals Black Phosphorus-Molybdenum Disulfide Hetero-Junctions Formed with Ink-Jet Printing for Potential Solar Cell Applications with Indium-Tin-Oxide

Crystals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 560
Author(s):  
Ravindra Ketan Mehta ◽  
Anupama Bhat Kaul
Keyword(s):  
Electrical Properties ◽  
Molybdenum Disulfide ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Cost Effective ◽  
Contact Materials ◽  
Ito Glass ◽  
The Future ◽  
Potential Applications ◽  
Jet Printing

In this work, we implemented liquid exfoliation to inkjet-print two-dimensional (2D) black phosphorous (BP) and molybdenum disulfide (MoS2) p–n heterojunctions on a standard indium tin oxide (ITO) glass substrate in a vertical architecture. We also compared the optical and electrical properties of the inkjet-printed BP layer with that of the MoS2 and the electrical properties of the mechanically exfoliated MoS2 with that of the inkjet-printed MoS2. We found significant differences in the optical characteristics of the inkjet-printed BP and MoS2 layers attributed to the differences in their underlying crystal structure. The newly demonstrated liquid exfoliated and inkjet-printed BP–MoS2 2D p–n junction was also compared with previous reports where mechanically exfoliated BP–MoS2 2D p–n junction were used. The electronic transport properties of mechanically exfoliated MoS2 membranes are typically better compared to inkjet-printed structures but inkjet printing offers a cost-effective and quicker way to fabricate heterostructures easily. In the future, the performance of inkjet-printed structures can be further improved by employing suitable contact materials, amongst other factors such as modifying the solvent chemistries. The architecture reported in this work has potential applications towards building solar cells with solution processed 2D materials in the future.

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