scholarly journals High quality mechanical and optical properties of commercial silicon nitride membranes

2008 ◽  
Vol 92 (10) ◽  
pp. 103125 ◽  
Author(s):  
B. M. Zwickl ◽  
W. E. Shanks ◽  
A. M. Jayich ◽  
C. Yang ◽  
A. C. Bleszynski Jayich ◽  
...  
Keyword(s):  
Optical Properties ◽  
Silicon Nitride ◽  
High Quality

Microstructural and optical properties of high-quality Mg–Zn oxide thin films

2021 ◽  
Vol 127 ◽  
pp. 105690
Author(s):  
A. Sáenz-Trevizo ◽  
D. Kuchle-Mena ◽  
P. Pizá-Ruiz ◽  
P. Amézaga-Madrid ◽  
O. Solís-Canto ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Oxide Thin Films ◽  
High Quality

Electrical and Optical Properties of Si+ and P+ Implanted InP:Fe

1990 ◽  
Vol 201 ◽  
Author(s):  
Honglie Shen ◽  
Genqing Yang ◽  
Zuyao Zhou ◽  
Guanqun Xia ◽  
Shichang Zou
Keyword(s):  
Optical Properties ◽  
Silicon Nitride ◽  
Temperature Dependence ◽  
Optimal Condition ◽  
Room Temperature ◽  
Broad Band ◽  
Photoluminescence Spectra ◽  
Electrical And Optical Properties ◽  
Spectrum Measurement ◽  
Single Implant

AbstractDual implantations of Si+ and P+ into InP:Fe were performed both at 200°C and room temperature. Si+ ions were implanted by 150keV with doses ranging from 5×1013 /cm2 to 1×1015 /cm2, while P+ ions were implanted by 110keV. 160keV and 180keV with doses ranging from 1×l013 /cm2 to 1×1015 /cm2. Hall measurements and photoluminescence spectra were used to characterize the silicon nitride encapsulated annealed samples. It was found that enhanced activation can be obtained by Si+ and P+ dual implantations. The optimal condition for dual implantations is that the atomic distribution of implanted P overlaps that of implanted si with the same implant dose. For a dose of 5×l014 /cm2, the highest activation for dual implants is 70% while the activation for single implant is 40% after annealing at 750°C for 15 minutes. PL spectrum measurement was carried out at temperatures from 11K to 100K. A broad band at about 1.26eV was found in Si+ implanted samples, of which the intensity increased with increasing of the Si dose and decreased with increasing of the co-implant P+ dose. The temperature dependence of the broad band showed that it is a complex (Vp-Sip) related band. All these results indicate that silicon is an amphoteric species in InP.

Optical Properties of Silicon Nitride

1973 ◽  
Vol 120 (2) ◽  
pp. 295 ◽  
Author(s):  
Herbert R. Philipp
Keyword(s):  
Optical Properties ◽  
Silicon Nitride

scholarly journals Optical Properties of Silicon-Rich Silicon Nitride (SixNyHz) from First Principles

Computation ◽  
2015 ◽  
Vol 3 (4) ◽  
pp. 657-669 ◽  
Author(s):  
Shu Tao ◽  
Anne Theulings ◽  
Violeta Prodanović ◽  
John Smedley ◽  
Harry van der Graaf
Keyword(s):  
Optical Properties ◽  
Silicon Nitride ◽  
First Principles

Changes in the optical properties of films of silicon nitride, silicon oxinitride, and silicon oxide upon ion irradiation

1977 ◽  
Vol 26 (1) ◽  
pp. 129-131
Author(s):  
N. N. Gerasimenko ◽  
T. I. Kovalevskaya ◽  
V. G. Pan'kin ◽  
K. K. Svitashev ◽  
G. M. Tseitlin
Keyword(s):  
Optical Properties ◽  
Silicon Nitride ◽  
Silicon Oxide ◽  
Ion Irradiation

Dependence of Scintillators Optical Properties on Intrinsic Structural Defects

1994 ◽  
Vol 348 ◽  
Author(s):  
N.V. Kilassen
Keyword(s):  
Plastic Deformation ◽  
Optical Properties ◽  
Crystal Growth ◽  
Spectral Distribution ◽  
Light Output ◽  
Structural Defects ◽  
High Quality ◽  
Intrinsic Defects ◽  
Distribution Kinetics ◽  
Wide Range

ABSTRACTThe studies of the dependence of the optical properties of various scintillators on intrinsic structural defects have been reviewed. The greater part of the review is devoted to the defects introduced by plastic deformation. A wide range of variations in the light output, spectral distribution, kinetics and other properties has been observed. These defects can be induced during crystal growth, annealing, processing, etc. The proper regulation of the superstructure of intrinsic defects can ensure the production of high quality scintillators having required properties.

Material and optical properties of GaAs grown on (001) Ge/Si pseudo-substrate

2004 ◽  
Vol 809 ◽  
Author(s):  
Yves Chriqui ◽  
Ludovic Largeau ◽  
Gilles Patriarche ◽  
Guillaume Saint-Girons ◽  
Sophie Bouchoule ◽  
...  
Keyword(s):  
Optical Properties ◽  
Dislocation Density ◽  
High Speed ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Lattice Parameter ◽  
Photoluminescence Intensity ◽  
High Quality ◽  
Light Emitting ◽  
Thermal Expansion Coefficients

ABSTRACTOne of the major challenges during recent years was to achieve the compatibility of III-V semiconductor epitaxy on silicon substrates to combine opto-electronics with high speed circuit technology. However, the growth of high quality epitaxial GaAs on Si is not straightforward due to the intrinsic differences in lattice parameters and thermal expansion coefficients of the two materials. Moreover, antiphase boundaries (APBs) appear that are disadvantageous for the fabrication of light emitting devices. Recently the successful fabrication of high quality germanium layers on exact (001) Si by chemical vapor deposition (CVD) was reported. Due to the germanium seed layer the lattice parameter is matched to the one of GaAs providing for excellent conditions for the subsequent GaAs growth. We have studied the material morphology of GaAs grown on Ge/Si PS using atomic layer epitaxy (ALE) at the interface between Ge and GaAs. We present results on the reduction of APBs and dislocation density on (001) Ge/Si PS when ALE is applied. The ALE allows the reduction of the residual dislocation density in the GaAs layers to 105 cm−2 (one order of magnitude as compared to the dislocation density of the Ge/Si PS). The optical properties are improved (ie. increased photoluminescence intensity). Using ALE, light emitting diodes based on strained InGaAs/GaAs quantum well as well as of In(Ga)As quantum dots on an exactly oriented (001) Ge/Si pseudo-substrate were fabricated and characterized.

scholarly journals Optical properties of silicon nitride films deposited by hot filament chemical vapor deposition

1995 ◽  
Vol 77 (12) ◽  
pp. 6534-6541 ◽  
Author(s):  
Sadanand V. Deshpande ◽  
Erdogan Gulari ◽  
Steven W. Brown ◽  
Stephen C. Rand
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Nitride Films ◽  
Hot Filament

scholarly journals Structural and optical properties of Be-doped high-quality self-catalyzed GaAs nanowires

2021 ◽  
Author(s):  
Yubin Kang ◽  
Haolin li ◽  
Jilong Tang ◽  
Huimin Jia ◽  
Xiaobing Hou ◽  
...  
Keyword(s):  
Optical Properties ◽  
Structural And Optical Properties ◽  
High Quality ◽  
Gaas Nanowires
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