Optical Properties of Silicon Nitride

1973 ◽  
Vol 120 (2) ◽  
pp. 295 ◽  
Author(s):  
Herbert R. Philipp
Keyword(s):  
Optical Properties ◽  
Silicon Nitride

Electrical and Optical Properties of Si+ and P+ Implanted InP:Fe

1990 ◽  
Vol 201 ◽  
Author(s):  
Honglie Shen ◽  
Genqing Yang ◽  
Zuyao Zhou ◽  
Guanqun Xia ◽  
Shichang Zou
Keyword(s):  
Optical Properties ◽  
Silicon Nitride ◽  
Temperature Dependence ◽  
Optimal Condition ◽  
Room Temperature ◽  
Broad Band ◽  
Photoluminescence Spectra ◽  
Electrical And Optical Properties ◽  
Spectrum Measurement ◽  
Single Implant

AbstractDual implantations of Si+ and P+ into InP:Fe were performed both at 200°C and room temperature. Si+ ions were implanted by 150keV with doses ranging from 5×1013 /cm2 to 1×1015 /cm2, while P+ ions were implanted by 110keV. 160keV and 180keV with doses ranging from 1×l013 /cm2 to 1×1015 /cm2. Hall measurements and photoluminescence spectra were used to characterize the silicon nitride encapsulated annealed samples. It was found that enhanced activation can be obtained by Si+ and P+ dual implantations. The optimal condition for dual implantations is that the atomic distribution of implanted P overlaps that of implanted si with the same implant dose. For a dose of 5×l014 /cm2, the highest activation for dual implants is 70% while the activation for single implant is 40% after annealing at 750°C for 15 minutes. PL spectrum measurement was carried out at temperatures from 11K to 100K. A broad band at about 1.26eV was found in Si+ implanted samples, of which the intensity increased with increasing of the Si dose and decreased with increasing of the co-implant P+ dose. The temperature dependence of the broad band showed that it is a complex (Vp-Sip) related band. All these results indicate that silicon is an amphoteric species in InP.

scholarly journals Optical Properties of Silicon-Rich Silicon Nitride (SixNyHz) from First Principles

Computation ◽  
2015 ◽  
Vol 3 (4) ◽  
pp. 657-669 ◽  
Author(s):  
Shu Tao ◽  
Anne Theulings ◽  
Violeta Prodanović ◽  
John Smedley ◽  
Harry van der Graaf
Keyword(s):  
Optical Properties ◽  
Silicon Nitride ◽  
First Principles

Changes in the optical properties of films of silicon nitride, silicon oxinitride, and silicon oxide upon ion irradiation

1977 ◽  
Vol 26 (1) ◽  
pp. 129-131
Author(s):  
N. N. Gerasimenko ◽  
T. I. Kovalevskaya ◽  
V. G. Pan'kin ◽  
K. K. Svitashev ◽  
G. M. Tseitlin
Keyword(s):  
Optical Properties ◽  
Silicon Nitride ◽  
Silicon Oxide ◽  
Ion Irradiation

scholarly journals Optical properties of silicon nitride films deposited by hot filament chemical vapor deposition

1995 ◽  
Vol 77 (12) ◽  
pp. 6534-6541 ◽  
Author(s):  
Sadanand V. Deshpande ◽  
Erdogan Gulari ◽  
Steven W. Brown ◽  
Stephen C. Rand
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Nitride Films ◽  
Hot Filament

Influences of the nitrogen content on the morphological, chemical and optical properties of pulsed laser deposited silicon nitride thin films

2005 ◽  
Vol 192 (2-3) ◽  
pp. 225-230 ◽  
Author(s):  
J.M. Lackner ◽  
W. Waldhauser ◽  
R. Berghauser ◽  
R. Ebner ◽  
M. Beutl ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Silicon Nitride ◽  
Nitrogen Content ◽  
Pulsed Laser

Doping-induced modulation of electrical and optical properties of silicon nitride

2010 ◽  
Vol 518 (17) ◽  
pp. 4918-4922 ◽  
Author(s):  
S.Zh. Karazhanov ◽  
P. Kroll ◽  
E.S. Marstein ◽  
A. Holt
Keyword(s):  
Optical Properties ◽  
Silicon Nitride ◽  
Electrical And Optical Properties

scholarly journals High quality mechanical and optical properties of commercial silicon nitride membranes

2008 ◽  
Vol 92 (10) ◽  
pp. 103125 ◽  
Author(s):  
B. M. Zwickl ◽  
W. E. Shanks ◽  
A. M. Jayich ◽  
C. Yang ◽  
A. C. Bleszynski Jayich ◽  
...  
Keyword(s):  
Optical Properties ◽  
Silicon Nitride ◽  
High Quality

Structure and optical properties of plasma‐deposited fluorinated silicon nitride thin films

1988 ◽  
Vol 63 (8) ◽  
pp. 2651-2659 ◽  
Author(s):  
Rhett E. Livengood ◽  
Mark A. Petrich ◽  
Dennis W. Hess ◽  
Jeffrey A. Reimer
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Silicon Nitride

The Influence of 5- and 6-Atom Rings on the Optical Properties of Amorphous Silicon Nitride. A Cluster Simulation

1999 ◽  
Vol 579 ◽  
Author(s):  
R.M. Valladarest ◽  
A.G. Calles ◽  
Alexander Valladares ◽  
Ariel A. Valladares
Keyword(s):  
Optical Properties ◽  
Silicon Nitride ◽  
Optical Absorption ◽  
Amorphous Silicon ◽  
Ring Topology ◽  
Amorphous Silicon Nitride ◽  
Cluster A

ABSTRACTWe simulate α - Si21 –N2: H that contains 6-atom boat-type rings and a – Si17–iNi: H that contains 5-atom planar rings, where i = 0, 1 or 4. The simulations were carried out using the DFT-LDA approximation contained in the DMol code of MSI. We report calculations of impurity levels and relate these to the size of the gap and to the optical absorption curves for each cluster. A comparison is made between the two α – SiN clusters studied to analyze the effect of the ring topology.

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