Material and optical properties of GaAs grown on (001) Ge/Si pseudo-substrate

2004 ◽  
Vol 809 ◽  
Author(s):  
Yves Chriqui ◽  
Ludovic Largeau ◽  
Gilles Patriarche ◽  
Guillaume Saint-Girons ◽  
Sophie Bouchoule ◽  
...  
Keyword(s):  
Optical Properties ◽  
Dislocation Density ◽  
High Speed ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Lattice Parameter ◽  
Photoluminescence Intensity ◽  
High Quality ◽  
Light Emitting ◽  
Thermal Expansion Coefficients

ABSTRACTOne of the major challenges during recent years was to achieve the compatibility of III-V semiconductor epitaxy on silicon substrates to combine opto-electronics with high speed circuit technology. However, the growth of high quality epitaxial GaAs on Si is not straightforward due to the intrinsic differences in lattice parameters and thermal expansion coefficients of the two materials. Moreover, antiphase boundaries (APBs) appear that are disadvantageous for the fabrication of light emitting devices. Recently the successful fabrication of high quality germanium layers on exact (001) Si by chemical vapor deposition (CVD) was reported. Due to the germanium seed layer the lattice parameter is matched to the one of GaAs providing for excellent conditions for the subsequent GaAs growth. We have studied the material morphology of GaAs grown on Ge/Si PS using atomic layer epitaxy (ALE) at the interface between Ge and GaAs. We present results on the reduction of APBs and dislocation density on (001) Ge/Si PS when ALE is applied. The ALE allows the reduction of the residual dislocation density in the GaAs layers to 105 cm−2 (one order of magnitude as compared to the dislocation density of the Ge/Si PS). The optical properties are improved (ie. increased photoluminescence intensity). Using ALE, light emitting diodes based on strained InGaAs/GaAs quantum well as well as of In(Ga)As quantum dots on an exactly oriented (001) Ge/Si pseudo-substrate were fabricated and characterized.

OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY

2007 ◽  
Vol 17 (01) ◽  
pp. 81-84
Author(s):  
J. Senawiratne ◽  
M. Zhu ◽  
W. Zhao ◽  
Y. Xia ◽  
Y. Li ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Stark Effect ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Green Emission ◽  
Luminescence Spectroscopy ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Multi Quantum Well

Optical properties of green emission Ga 0.80 In 0.20 N/GaN multi-quantum well and light emitting diode have been investigated by using photoluminescence, cathodoluminescence, electroluminescence, and photoconductivity. The temperature dependent photoluminescence and cathodoluminescence studies show three emission bands including GaInN/GaN quantum well emission centered at 2.38 eV (~ 520 nm). The activation energy of the non-radiative recombination centers was found to be ~ 60 meV. The comparison of photoconductivity with luminescence spectroscopy revealed that optical properties of quantum well layers are strongly affected by the quantum-confined Stark effect.

scholarly journals Quantum Dots and Applications

Materials ◽  
2020 ◽  
Vol 13 (4) ◽  
pp. 897
Author(s):  
Chang-Yeol Han ◽  
Hyun-Sik Kim ◽  
Heesun Yang
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Band Gap ◽  
Light Emitting Diodes ◽  
Photovoltaic Cells ◽  
Core Shell ◽  
Special Issue ◽  
High Quality ◽  
Light Emitting ◽  
Size Dependent

It is the unique size-dependent band gap of quantum dots (QDs) that makes them so special in various applications. They have attracted great interest, especially in optoelectronic fields such as light emitting diodes and photovoltaic cells, because their photoluminescent characteristics can be significantly improved via optimization of the processes by which they are synthesized. Control of their core/shell heterostructures is especially important and advantageous. However, a few challenges remain to be overcome before QD-based devices can completely replace current optoelectronic technology. This Special Issue provides detailed guides for synthesis of high-quality QDs and their applications. In terms of fabricating devices, tailoring optical properties of QDs and engineering defects in QD-related interfaces for higher performance remain important issues to be addressed.

The Growth of AIGaAs/GaAs Heterostructures By Atomic Layer Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
S. P. Denbaars ◽  
A. Hariz ◽  
C. Beyler ◽  
B. Y. Maa ◽  
Q. Chen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Active Regions ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
High Quality ◽  
Monolayer Growth ◽  
Low Threshold ◽  
Kinetics Of

ABSTRACTThe kinetics of atomic layer epitaxy (ALE) of GaAs utilizing trimethylgallium and arsine are described. The results show that saturated monolayer growth can be achieved-in the temperature range 445°C -485°C and that high quality materials can be grown.. Hybrid A1GaAs/GaAs heterostructures have been grown utilizing ALE for the active regions and conventional metalorganic chemical vapor deposition (MOCVD) for the confining regions that yield high quality quantum wells and low threshold quantum well lasers.

Tuning the influence of metal nanoparticles on ZnO photoluminescence by atomic-layer-deposited dielectric spacer

Nanophotonics ◽  
2013 ◽  
Vol 2 (2) ◽  
pp. 153-160 ◽  
Author(s):  
Monan Liu ◽  
Rui Chen ◽  
Giorgio Adamo ◽  
Kevin F. MacDonald ◽  
Edbert J. Sie ◽  
...  
Keyword(s):  
Optical Properties ◽  
Metal Nanoparticles ◽  
Atomic Layer ◽  
Semiconductor Nanostructures ◽  
Enhancement Ratio ◽  
Local Surface ◽  
Light Emitting ◽  
Layer Deposition ◽  
Dielectric Spacer ◽  
Spacer Thickness

AbstractThere is increasing interest in tuning the optical and optoelectronic properties of semiconductor nanostructures using metal nanoparticles in their applications in light-emitting and detection devices. In this work we study the effect of a dielectric Al2O3 gap layer (i.e., spacer) on the interaction of ZnO nanowires with metal nanoparticles. The Al2O3 spacer thickness is varied in the range of 1–25 nm using atomic layer deposition (ALD) in order to tune the interaction. It is found that ~5 nm is an optimum spacer thickness common for most metals, although the enhancement ratio of the near-bandedge emission differs among the metals. Consistent results are obtained from both photoluminescence (PL) and cathodoluminescence (CL) spectroscopies, with the latter being applied to the optical properties of individual semiconductor/metal nanoheterostructures. The interaction is primarily proposed to be related to coupling of ZnO excitons with local surface plasmons of metals, although other mechanisms should not be ruled out.

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