Improving charge-injection balance and cathode transmittance of top-emitting organic light-emitting device with p-type silicon anode

2005 ◽  
Vol 87 (8) ◽  
pp. 081106 ◽  
Author(s):  
G. L. Ma ◽  
G. Z. Ran ◽  
A. G. Xu ◽  
Y. H. Xu ◽  
Y. P. Qiao ◽  
...  
Keyword(s):  
Charge Injection ◽  
Silicon Anode ◽  
Light Emitting ◽  
Type Silicon ◽  
Organic Light ◽  
P Type

Experimental study of the organic light emitting diode with a p-type silicon anode

2006 ◽  
Vol 496 (2) ◽  
pp. 665-668 ◽  
Author(s):  
G.L. Ma ◽  
A.G. Xu ◽  
G.Z. Ran ◽  
Y.P. Qiao ◽  
B.R. Zhang ◽  
...  
Keyword(s):  
Experimental Study ◽  
Light Emitting Diode ◽  
Silicon Anode ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Type Silicon ◽  
Organic Light ◽  
P Type

Organic light-emitting diodes with n-type silicon anode

2005 ◽  
Vol 20 (8) ◽  
pp. 761-764 ◽  
Author(s):  
G Z Ran ◽  
Y H Xu ◽  
G L Ma ◽  
A G Xu ◽  
Y P Qiao ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Silicon Anode ◽  
Light Emitting ◽  
Type Silicon ◽  
Organic Light

Enhanced hole injection in a bilayer vacuum-deposited organic light-emitting device using a p-type doped silicon anode

1999 ◽  
Vol 74 (4) ◽  
pp. 609-611 ◽  
Author(s):  
X. Zhou ◽  
J. He ◽  
L. S. Liao ◽  
M. Lu ◽  
Z. H. Xiong ◽  
...  
Keyword(s):  
Silicon Anode ◽  
Hole Injection ◽  
Light Emitting ◽  
Organic Light ◽  
Doped Silicon ◽  
P Type

scholarly journals Large Area Emission in p-Type Polymer-Based Light-Emitting Field-Effect Transistors by Incorporating Charge Injection Interlayers

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 901
Author(s):  
Gizem Acar ◽  
Muhammad Javaid Iqbal ◽  
Mujeeb Ullah Chaudhry
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Injection ◽  
Limiting Factors ◽  
Hole Injection ◽  
Large Area ◽  
Device Structure ◽  
Light Emitting ◽  
Emission Area ◽  
P Type

Organic light-emitting field-effect transistors (LEFETs) provide the possibility of simplifying the display pixilation design as they integrate the drive-transistor and the light emission in a single architecture. However, in p-type LEFETs, simultaneously achieving higher external quantum efficiency (EQE) at higher brightness, larger and stable emission area, and high switching speed are the limiting factors for to realise their applications. Herein, we present a p-type polymer heterostructure-based LEFET architecture with electron and hole injection interlayers to improve the charge injection into the light-emitting layer, which leads to better recombination. This device structure provides access to hole mobility of ~2.1 cm2 V−1 s−1 and EQE of 1.6% at a luminance of 2600 cd m−2. Most importantly, we observed a large area emission under the entire drain electrode, which was spatially stable (emission area is not dependent on the gate voltage and current density). These results show an important advancement in polymer-based LEFET technology toward realizing new digital display applications.

Charge injection and accumulation in organic light-emitting diode with PEDOT:PSS anode

2015 ◽  
Vol 117 (15) ◽  
pp. 155503 ◽  
Author(s):  
Martin Weis ◽  
Takako Otsuka ◽  
Dai Taguchi ◽  
Takaaki Manaka ◽  
Mitsumasa Iwamoto
Keyword(s):  
Light Emitting Diode ◽  
Charge Injection ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Organic Light

Improved positive polaron stability of the p-type host for long lifetime in phosphorescent organic light-emitting diodes

2021 ◽  
Author(s):  
Ji Ae Kang ◽  
Jun Seop Lim ◽  
Jun Yeob Lee
Keyword(s):  
Light Emitting Diodes ◽  
Oxidation Stability ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Type Host ◽  
Organic Light ◽  
Long Lifetime ◽  
Device Lifetime ◽  
P Type ◽  
Polaron Stability

Long lifetime is one of requirements for commercialization of organic light-emitting diodes (OLEDs). In this paper, we improved the device lifetime of phosphorescent OLEDs by enhancing oxidation stability of the...

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