Inversion-type enhancement-mode HfO2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer

Hyoung-Sub Kim; I. Ok; M. Zhang; F. Zhu; S. Park; J. Yum; H. Zhao; Jack C. Lee; Jungwoo Oh; Prashant Majhi

doi:10.1063/1.2838294

Inversion-type enhancement-mode HfO2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer

Applied Physics Letters ◽

10.1063/1.2838294 ◽

2008 ◽

Vol 92 (3) ◽

pp. 032907 ◽

Cited By ~ 29

Author(s):

Hyoung-Sub Kim ◽

I. Ok ◽

M. Zhang ◽

F. Zhu ◽

S. Park ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Enhancement Mode

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Influence of Dry Recess Process on Enhancement-Mode GaN Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.01ag02 ◽

2013 ◽

Vol 52 (1S) ◽

pp. 01AG02 ◽

Cited By ~ 11

Author(s):

Qingpeng Wang ◽

Kentaro Tamai ◽

Takahiro Miyashita ◽

Shin-ichi Motoyama ◽

Dejun Wang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Enhancement Mode

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Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y2O3 oxide insulator grown by electron beam evaporator

Applied Physics Letters ◽

10.1063/1.4983091 ◽

2017 ◽

Vol 110 (20) ◽

pp. 203502 ◽

Cited By ~ 26

Author(s):

J. W. Liu ◽

H. Oosato ◽

M. Y. Liao ◽

Y. Koide

Keyword(s):

Electron Beam ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Enhancement Mode

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MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1704876 ◽

2004 ◽

Vol 84 (15) ◽

pp. 2919-2921 ◽

Cited By ~ 88

Author(s):

Y. Irokawa ◽

Y. Nakano ◽

M. Ishiko ◽

T. Kachi ◽

J. Kim ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Enhancement Mode

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GaN enhancement mode metal-oxide semiconductor field effect transistors

physica status solidi (c) ◽

10.1002/pssc.200461280 ◽

2005 ◽

Vol 2 (7) ◽

pp. 2668-2671 ◽

Cited By ~ 3

Author(s):

Y. Irokawa ◽

Y. Nakano ◽

M. Ishiko ◽

T. Kachi ◽

J. Kim ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Enhancement Mode

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Fully self-aligned process for fabricating 100 nm gate length enhancement mode GaAs metal-oxide-semiconductor field-effect transistors

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3256624 ◽

2009 ◽

Vol 27 (6) ◽

pp. 3153 ◽

Cited By ~ 13

Author(s):

Xu Li ◽

Richard J. W. Hill ◽

Paolo Longo ◽

Martin C. Holland ◽

Haiping Zhou ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Length ◽

Enhancement Mode

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Enhancement-mode In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with sol–gel processed gate dielectrics

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2014.04.020 ◽

2015 ◽

Vol 29 ◽

pp. 272-276

Author(s):

Chih-Chun Hu ◽

Cheng-En Wu ◽

Hsien-Cheng Lin ◽

Kuan-Wei Lee ◽

Yeong-Her Wang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Sol Gel ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Enhancement Mode

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Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics

Applied Physics Letters ◽

10.1063/1.2756106 ◽

2007 ◽

Vol 91 (2) ◽

pp. 022108 ◽

Cited By ~ 71

Author(s):

Y. Q. Wu ◽

Y. Xuan ◽

T. Shen ◽

P. D. Ye ◽

Z. Cheng ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Enhancement Mode

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Cited By ~ 13

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Si-based Spin Metal-Oxide-Semiconductor Field-Effect Transistors with an Inversion Channel

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2019.8901832 ◽

2019 ◽

Author(s):

Ryosho Nakane ◽

Shoichi Sato ◽

Masaaki Tanaka

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel

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