Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y2O3 oxide insulator grown by electron beam evaporator

J. W. Liu; H. Oosato; M. Y. Liao; Y. Koide

doi:10.1063/1.4983091

Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y2O3 oxide insulator grown by electron beam evaporator

Applied Physics Letters ◽

10.1063/1.4983091 ◽

2017 ◽

Vol 110 (20) ◽

pp. 203502 ◽

Cited By ~ 26

Author(s):

J. W. Liu ◽

H. Oosato ◽

M. Y. Liao ◽

Y. Koide

Keyword(s):

Electron Beam ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Enhancement Mode

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Influence of Dry Recess Process on Enhancement-Mode GaN Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.01ag02 ◽

2013 ◽

Vol 52 (1S) ◽

pp. 01AG02 ◽

Cited By ~ 11

Author(s):

Qingpeng Wang ◽

Kentaro Tamai ◽

Takahiro Miyashita ◽

Shin-ichi Motoyama ◽

Dejun Wang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Enhancement Mode

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Effects of Electron Beam Damage on the Electrical Characteristics of n-type Metal-Oxide-Semiconductor Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.1223 ◽

1994 ◽

Vol 33 (Part 1, No. 3A) ◽

pp. 1223-1227 ◽

Cited By ~ 2

Author(s):

Young Jin Jeon ◽

Sin-Chong Park ◽

Soung Soon Chun

Keyword(s):

Electron Beam ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Beam Damage

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New properties and applications of electron‐beam evaporated silicon in submicron elevated source/drain metal‐oxide‐semiconductor field‐effect transistors

Applied Physics Letters ◽

10.1063/1.113014 ◽

1994 ◽

Vol 65 (6) ◽

pp. 728-730

Author(s):

Mohammad R. Mirabedini ◽

Scott H. Goodwin‐Johansson ◽

Hisham Z. Massoud

Keyword(s):

Electron Beam ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Elevated Source

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MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1704876 ◽

2004 ◽

Vol 84 (15) ◽

pp. 2919-2921 ◽

Cited By ~ 88

Author(s):

Y. Irokawa ◽

Y. Nakano ◽

M. Ishiko ◽

T. Kachi ◽

J. Kim ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Enhancement Mode

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GaN enhancement mode metal-oxide semiconductor field effect transistors

physica status solidi (c) ◽

10.1002/pssc.200461280 ◽

2005 ◽

Vol 2 (7) ◽

pp. 2668-2671 ◽

Cited By ~ 3

Author(s):

Y. Irokawa ◽

Y. Nakano ◽

M. Ishiko ◽

T. Kachi ◽

J. Kim ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Enhancement Mode

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Fully self-aligned process for fabricating 100 nm gate length enhancement mode GaAs metal-oxide-semiconductor field-effect transistors

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3256624 ◽

2009 ◽

Vol 27 (6) ◽

pp. 3153 ◽

Cited By ~ 13

Author(s):

Xu Li ◽

Richard J. W. Hill ◽

Paolo Longo ◽

Martin C. Holland ◽

Haiping Zhou ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Length ◽

Enhancement Mode

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Enhancement-mode In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with sol–gel processed gate dielectrics

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2014.04.020 ◽

2015 ◽

Vol 29 ◽

pp. 272-276

Author(s):

Chih-Chun Hu ◽

Cheng-En Wu ◽

Hsien-Cheng Lin ◽

Kuan-Wei Lee ◽

Yeong-Her Wang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Sol Gel ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Enhancement Mode

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Inversion-type enhancement-mode HfO2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer

Applied Physics Letters ◽

10.1063/1.2838294 ◽

2008 ◽

Vol 92 (3) ◽

pp. 032907 ◽

Cited By ~ 29

Author(s):

Hyoung-Sub Kim ◽

I. Ok ◽

M. Zhang ◽

F. Zhu ◽

S. Park ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Enhancement Mode

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Defect Characterization in Metal-Oxide-Semiconductor Field-Effect-Transistors with Trench Gates by Electron Beam-Induced Current Technique

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.63-64.407 ◽

1998 ◽

Vol 63-64 ◽

pp. 407-412 ◽

Cited By ~ 3

Author(s):

H. Tomokage ◽

Y. Ishiwata ◽

H. Souno ◽

Masahiro Kawakami ◽

N. Sonoda

Keyword(s):

Electron Beam ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Defect Characterization ◽

Induced Current ◽

Electron Beam Induced Current ◽

Trench Gates

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Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Orientation-Dependent Etching and Electron Beam Lithography

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.4142 ◽

2003 ◽

Vol 42 (Part 1, No. 6B) ◽

pp. 4142-4146 ◽

Cited By ~ 16

Author(s):

Yongxun Liu ◽

Kenichi Ishii ◽

Toshiyuki Tsutsumi ◽

Meishoku Masahara ◽

Hidenori Takashima ◽

...

Keyword(s):

Electron Beam ◽

Metal Oxide ◽

Electron Beam Lithography ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate

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