Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics

Y. Q. Wu; Y. Xuan; T. Shen; P. D. Ye; Z. Cheng; A. Lochtefeld

doi:10.1063/1.2756106

Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics

Applied Physics Letters ◽

10.1063/1.2756106 ◽

2007 ◽

Vol 91 (2) ◽

pp. 022108 ◽

Cited By ~ 71

Author(s):

Y. Q. Wu ◽

Y. Xuan ◽

T. Shen ◽

P. D. Ye ◽

Z. Cheng ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Enhancement Mode

Download Full-text

The Influence of Hf-Composition on Atomic Layer Deposition HfSiON Gated Metal–Oxide–Semiconductor Field-Effect Transistors after Channel-Hot-Carrier Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c009 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C009 ◽

Cited By ~ 5

Author(s):

Shuang-Yuan Chen ◽

Hung-Wen Chen ◽

Chuan-Hsi Liu ◽

Li-Wei Cheng

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Layer Deposition ◽

Hot Carrier Stress

Download Full-text

Influence of Dry Recess Process on Enhancement-Mode GaN Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.01ag02 ◽

2013 ◽

Vol 52 (1S) ◽

pp. 01AG02 ◽

Cited By ~ 11

Author(s):

Qingpeng Wang ◽

Kentaro Tamai ◽

Takahiro Miyashita ◽

Shin-ichi Motoyama ◽

Dejun Wang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Enhancement Mode

Download Full-text

GaAs-based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition

Journal of Electronic Materials ◽

10.1007/s11664-004-0220-9 ◽

2004 ◽

Vol 33 (8) ◽

pp. 912-915 ◽

Cited By ~ 12

Author(s):

P. D. Ye ◽

G. D. Wilk ◽

B. Yang ◽

J. Kwo ◽

H. -J. L. Gossmann ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition

Download Full-text

Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric

Applied Physics Letters ◽

10.1063/1.2937117 ◽

2008 ◽

Vol 92 (23) ◽

pp. 233508 ◽

Cited By ~ 21

Author(s):

Han Zhao ◽

Davood Shahrjerdi ◽

Feng Zhu ◽

Manhong Zhang ◽

Hyoung-Sub Kim ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Al2o3 Gate Dielectric

Download Full-text

Admittance and subthreshold characteristics of atomic-layer-deposition Al2O3 on In0.53Ga0.47As in surface and buried channel flatband metal-oxide-semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.4720940 ◽

2012 ◽

Vol 111 (10) ◽

pp. 104112 ◽

Cited By ~ 5

Author(s):

G. W. Paterson ◽

S. J. Bentley ◽

M. C. Holland ◽

I. G. Thayne ◽

J. Ahn ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Buried Channel ◽

Layer Deposition

Download Full-text

Improvement in Mobility and Negative-Bias Temperature Instability in Metal–Oxide–Semiconductor Field-Effect Transistors with Atomic-Layer-Deposited Si–Nitride/SiO2Stack Dielectrics

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.1874 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 1874-1878 ◽

Cited By ~ 1

Author(s):

Shiyang Zhu ◽

Anri Nakajima ◽

Takuo Ohashi ◽

Hideharu Miyake

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

Download Full-text

Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium–Nitride Gate for High-Performance Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.04da05 ◽

2012 ◽

Vol 51 ◽

pp. 04DA05

Author(s):

Tetsuro Hayashida ◽

Kazuhiko Endo ◽

Yongxun Liu ◽

Shin-ichi O'uchi ◽

Takashi Matsukawa ◽

...

Keyword(s):

Metal Oxide ◽

Titanium Nitride ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Experimental Comparisons

Download Full-text

Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2/In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors

IEEE Electron Device Letters ◽

10.1109/led.2016.2581175 ◽

2016 ◽

pp. 1-1 ◽

Cited By ~ 13

Author(s):

Quang Luc ◽

Shou Cheng ◽

Po Chang ◽

Huy Do ◽

Jin Chen ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition

Download Full-text

Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors

Applied Physics Letters ◽

10.1063/1.4833815 ◽

2013 ◽

Vol 103 (22) ◽

pp. 223504 ◽

Cited By ~ 7

Author(s):

H. S. Shin ◽

J. H. Yum ◽

D. W. Johnson ◽

H. R. Harris ◽

Todd. W. Hudnall ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Defect Density ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition ◽

Interface Defect

Download Full-text

Atomic-layer-deposited silicon-nitride/SiO2 stacked gate dielectrics for highly reliable p-metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1320847 ◽

2000 ◽

Vol 77 (18) ◽

pp. 2855-2857 ◽

Cited By ~ 25

Author(s):

Anri Nakajima ◽

Takashi Yoshimoto ◽

Toshiro Kidera ◽

Katsunori Obata ◽

Shin Yokoyama ◽

...

Keyword(s):

Silicon Nitride ◽

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Download Full-text