Transition behavior of surface morphology evolution of Si(100) during low-energy normal-incidence Ar+ ion bombardment

2008 ◽  
Vol 103 (3) ◽  
pp. 033512 ◽  
Author(s):  
Gozde Ozaydin ◽  
Karl F. Ludwig ◽  
Hua Zhou ◽  
Lan Zhou ◽  
Randall L. Headrick
Keyword(s):  
Surface Morphology ◽  
Normal Incidence ◽  
Ion Bombardment ◽  
Low Energy ◽  
Morphology Evolution ◽  
Transition Behavior ◽  
Surface Morphology Evolution

scholarly journals Surface Morphology Evolution of GaAs by Low Energy Ion Sputtering

2007 ◽  
Vol 2 (10) ◽  
pp. 504-508 ◽  
Author(s):  
Y. Wang ◽  
S. F. Yoon ◽  
C. Y. Ngo ◽  
J. Ahn
Keyword(s):  
Surface Morphology ◽  
Low Energy ◽  
Morphology Evolution ◽  
Ion Sputtering ◽  
Surface Morphology Evolution

Si(100) surface morphology evolution during normal-incidence sputtering with 100–500 eV Ar+ ions

2002 ◽  
Vol 81 (15) ◽  
pp. 2770-2772 ◽  
Author(s):  
F. Ludwig ◽  
C. R. Eddy ◽  
O. Malis ◽  
R. L. Headrick
Keyword(s):  
Surface Morphology ◽  
Normal Incidence ◽  
Morphology Evolution ◽  
Surface Morphology Evolution

Stress and surface morphology evolution

2010 ◽  
pp. 166-192
Author(s):  
Y. Q. Fu ◽  
W. M. Huang ◽  
M. Cai ◽  
S. Zhang
Keyword(s):  
Surface Morphology ◽  
Morphology Evolution ◽  
Surface Morphology Evolution

Low Energy Ar Ion Bombardment of (001) Si: Defects and Surface Morphology

1991 ◽  
Vol 223 ◽  
Author(s):  
M. V. R. Murty ◽  
Harry A. Atwater ◽  
Thomas J. Watson
Keyword(s):  
Molecular Dynamics ◽  
Surface Morphology ◽  
Surface Defect ◽  
Formation Rate ◽  
Ion Bombardment ◽  
Low Energy ◽  
Dynamics Simulation ◽  
Defect Structures ◽  
Adatom Diffusion ◽  
Migration Component

ABSTRACTThe interaction of low energy Ar+ ions with several surface defect structures on (001) Si has been investigated using molecular dynamics simulation. The simulations suggest that ions with energy less than 20 eV selectively displace surface atoms without causing bulk damage, and that the displacement energies for different defect structures is different. The most important effect of ion bombardment on surface morphology is the increased formation rate of single adatoms, which may lead to smoother surfaces by enhanced coarsening at typical epitaxial temperatures. Simulations results also imply that the migration component of adatom diffusion is not significantly enhanced by ion bombardment at typical epitaxial temperatures (600 – 800 K).

Surface Morphology Evolution during LP-MOCVD Growth of ZnO on Sapphire

2005 ◽  
pp. 1693-1696
Author(s):  
Jian Dong Ye ◽  
Shu Lin Gu ◽  
Su Min Zhu ◽  
S.M. Liu ◽  
Feng Qin ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Morphology Evolution ◽  
Mocvd Growth ◽  
Surface Morphology Evolution
Sign in / Sign up

Export Citation Format

Share Document