Evaluation of minority-carrier diffusion length in n-type β-FeSi2 single crystals by electron-beam-induced current

Teruhisa Ootsuka; Takashi Suemasu; Jun Chen; Takashi Sekiguchi

doi:10.1063/1.2835904

Evaluation of minority-carrier diffusion length in n-type β-FeSi2 single crystals by electron-beam-induced current

Applied Physics Letters ◽

10.1063/1.2835904 ◽

2008 ◽

Vol 92 (4) ◽

pp. 042117 ◽

Cited By ~ 15

Author(s):

Teruhisa Ootsuka ◽

Takashi Suemasu ◽

Jun Chen ◽

Takashi Sekiguchi

Keyword(s):

Electron Beam ◽

Single Crystals ◽

Minority Carrier ◽

Diffusion Length ◽

Induced Current ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Electron Beam Induced Current

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Minority Carrier Diffusion Length in AlGaN: A Combined Electron Beam Induced Current and Transmission Microscopy Study

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.63-64.139 ◽

1998 ◽

Vol 63-64 ◽

pp. 139-146 ◽

Cited By ~ 3

Author(s):

A. Cremades ◽

M. Albrecht ◽

Axel Voigt ◽

J. Krinke ◽

R. Dimitrov ◽

...

Keyword(s):

Electron Beam ◽

Minority Carrier ◽

Diffusion Length ◽

Microscopy Study ◽

Induced Current ◽

Transmission Microscopy ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Electron Beam Induced Current

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Depth profiling of the minority‐carrier diffusion length in intrinsically gettered silicon by electron‐beam‐induced current

Journal of Applied Physics ◽

10.1063/1.339942 ◽

1988 ◽

Vol 63 (5) ◽

pp. 1569-1579 ◽

Cited By ~ 11

Author(s):

C. Donolato ◽

M. Kittler

Keyword(s):

Electron Beam ◽

Minority Carrier ◽

Diffusion Length ◽

Depth Profiling ◽

Induced Current ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Electron Beam Induced Current

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Determination of the minority carrier diffusion length in compositionally graded Cu(In,Ga)Se2 solar cells using electron beam induced current

Applied Physics Letters ◽

10.1063/1.3291046 ◽

2010 ◽

Vol 96 (2) ◽

pp. 022104 ◽

Cited By ~ 49

Author(s):

Gregory Brown ◽

Vladimir Faifer ◽

Alex Pudov ◽

Sergey Anikeev ◽

Eugene Bykov ◽

...

Keyword(s):

Electron Beam ◽

Solar Cells ◽

Minority Carrier ◽

Diffusion Length ◽

Induced Current ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Electron Beam Induced Current

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Comments on ‘‘Measurements of minority‐carrier diffusion length in n‐CuInSe2 by electron‐beam‐induced current method’’ [J. Appl. Phys. 66, 5412 (1989)]

Journal of Applied Physics ◽

10.1063/1.346295 ◽

1990 ◽

Vol 68 (7) ◽

pp. 3759-3759

Author(s):

Keung L. Luke

Keyword(s):

Electron Beam ◽

Minority Carrier ◽

Diffusion Length ◽

Current Method ◽

Induced Current ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Electron Beam Induced Current

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Mapping of crystal defects and the minority carrier diffusion length in 6H–SiC using a novel electron beam induced current technique

Journal of Applied Physics ◽

10.1063/1.368578 ◽

1998 ◽

Vol 84 (7) ◽

pp. 3986-3992 ◽

Cited By ~ 12

Author(s):

M. Tabib-Azar ◽

S. M. Hubbard ◽

C. M. Schnabel ◽

S. Bailey

Keyword(s):

Electron Beam ◽

Minority Carrier ◽

Diffusion Length ◽

Crystal Defects ◽

Induced Current ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Current Technique ◽

Electron Beam Induced Current

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Determination of minority‐carrier diffusion length by integral properties of electron‐beam‐induced current profiles

Journal of Applied Physics ◽

10.1063/1.349454 ◽

1991 ◽

Vol 70 (4) ◽

pp. 2163-2168 ◽

Cited By ~ 12

Author(s):

D. Cavalcoli ◽

A. Cavallini ◽

A. Castaldini

Keyword(s):

Electron Beam ◽

Minority Carrier ◽

Diffusion Length ◽

Induced Current ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Electron Beam Induced Current

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Evaluation of the minority carrier diffusion length by means of electron beam induced current and Monte Carlo simulation in AlGaAs and GaAs p-i-n solar cells

Semiconductor Science and Technology ◽

10.1088/0268-1242/10/5/010 ◽

1995 ◽

Vol 10 (5) ◽

pp. 627-633 ◽

Cited By ~ 8

Author(s):

E Grunbaum ◽

E Napchan ◽

Z Barkay ◽

K Barnham ◽

J Nelson ◽

...

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Electron Beam ◽

Solar Cells ◽

Minority Carrier ◽

Diffusion Length ◽

Induced Current ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Electron Beam Induced Current

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Erratum: ‘‘Depth profiling of the minority‐carrier diffusion length in intrinsically gettered silicon by electron‐beam‐induced current’’ [J. Appl. Phys. 63, 1569 (1988)]

Journal of Applied Physics ◽

10.1063/1.342528 ◽

1988 ◽

Vol 64 (6) ◽

pp. 3330-3330

Author(s):

C. Donolato ◽

M. Kittler

Keyword(s):

Electron Beam ◽

Minority Carrier ◽

Diffusion Length ◽

Depth Profiling ◽

Induced Current ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Electron Beam Induced Current

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Evaluation of minority carrier diffusion length of undoped n-BaSi2epitaxial thin films on Si(001) substrates by electron-beam-induced-current technique

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.078004 ◽

2014 ◽

Vol 53 (7) ◽

pp. 078004 ◽

Cited By ~ 11

Author(s):

Masakazu Baba ◽

Kentaro Watanabe ◽

Kosuke O. Hara ◽

Kaoru Toko ◽

Takashi Sekiguchi ◽

...

Keyword(s):

Thin Films ◽

Electron Beam ◽

Minority Carrier ◽

Diffusion Length ◽

Induced Current ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Current Technique ◽

Electron Beam Induced Current

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Measurements of minority‐carrier diffusion length inn‐CulnS2by electron‐beam‐induced current method

Journal of Applied Physics ◽

10.1063/1.343688 ◽

1989 ◽

Vol 66 (11) ◽

pp. 5412-5415 ◽

Cited By ~ 17

Author(s):

R. Scheer ◽

M. Wilhelm ◽

H. J. Lewerenz

Keyword(s):

Electron Beam ◽

Minority Carrier ◽

Diffusion Length ◽

Current Method ◽

Induced Current ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Electron Beam Induced Current

Download Full-text