Dielectric properties of Ba0.6Sr0.4TiO3 thin films using Pb0.3Sr0.7TiO3 buffer layers

2007 ◽  
Vol 91 (25) ◽  
pp. 252908 ◽  
Author(s):  
Sheng-Xiang Wang ◽  
Jian-Hua Hao ◽  
Zhen-Ping Wu ◽  
Dan-Yang Wang ◽  
Yue Zhuo ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Buffer Layers

Enhanced Dielectric Properties of Nanocrystalline (Ba0.65Sr0.35)TiO3 Thin Films Grown on CaRuO3 Buffer Layers

2009 ◽  
Vol 9 (10) ◽  
pp. 5834-5838 ◽  
Author(s):  
H. F. Xiong ◽  
X. G. Tang ◽  
L. L. Jiang ◽  
H. L. W. Chan
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Buffer Layers

Effects of LSCO Buffer Layer on the Microstructure and Dielectric Properties of Ba0.6Sr0.4TiO3 Films Prepared by Sol-gel Methods

2009 ◽  
Vol 1199 ◽  
Author(s):  
Songwei Han ◽  
Shengwen Yu ◽  
Jinrong Cheng
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Sol Gel ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Random Orientation ◽  
X Ray ◽  
Bst Thin Films ◽  
Structure And Morphology ◽  
Bst Films

AbstractIn this work, Ba0.6Sr0.4TiO3(BST) thin films were deposited on Ti substrates using conductive La0.5Sr0.5CoO3 (LCSO) as buffer layers. Both BST and LSCO films were prepared by sol-gel methods. The structure and morphology of BST and LSCO films were analyzed by X-ray diffraction (XRD). XRD results show that both BST and LSCO films have perovskite structure with random orientation. The dielectric properties of BST films were dependent on the thickness of LSCO buffer layers. Upon using LSCO buffer layers, the dielectric properties of BST films were significantly improved. The dielectric constant, tunability, and dielectric loss of BST thin films for LSCO of 150 nm achieved about 453, 0.032 and 31.26% respectively.

Structural and dielectric properties of epitaxial Ba0.6Sr0.4TiO3 thin films grown on Si substrates with thin SrO buffer layers

2007 ◽  
Vol 18 (3-4) ◽  
pp. 305-309 ◽  
Author(s):  
Hyun-Suk Kim ◽  
Tae-Seon Hyun ◽  
Ho-Gi Kim ◽  
Tae-Soon Yun ◽  
Jong-Chul Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Buffer Layers ◽  
Si Substrates

scholarly journals Impact of NiOxBuffer Layers on the Dielectric Properties of BaTiO3Thin Films on Nickel Substrates Fabricated by Polymer Assisted Deposition

2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
Hui Du ◽  
Yang Li ◽  
Wei Zheng Liang ◽  
Yu Xuan Wang ◽  
Min Gao ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Leakage Current ◽  
Health Monitoring ◽  
Buffer Layers ◽  
Piezoelectric Thin Films ◽  
Potential Applications ◽  
General Test ◽  
Structural Metals ◽  
Nickel Substrates

Structural health monitoring with piezoelectric thin films integrated on structural metals shows great advantages for potential applications. However, the integration of piezoelectric thin films on structure metals is still challenged. In this paper, we report the piezoelectric barium titanate [BaTiO3(BTO)] thin films deposited on polycrystalline Ni substrates by the polymer assisted deposition (PAD) method using NiOxas the buffer layers. The NiOxbuffer layers with different thicknesses were prepared by varying immersing time from 5 minutes to 4 hours in H2O2solution. The dielectric and leakage current properties of the thin films have been studied by general test systems. The BTO/Ni heterostructure with 2-hour immersing time exhibits better dielectric properties with a dielectric constant over 1500 and a 34.8% decrease of the dielectric loss compared to that with 5-minute immersing time. The results show that the leakage current density is strongly affected by the thickness of the NiOxbuffer layer. The conduction mechanisms of the BTO/Ni heterostructure have been discussed according to theJ-Vcharacteristic curves.

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