Effects of NH3 plasma pretreatment on initial reactions of atomic layer deposition TaN barrier layer on SiOC dielectric

2007 ◽  
Vol 91 (24) ◽  
pp. 242903 ◽  
Author(s):  
Liang Sun ◽  
Yuan Xue ◽  
Shi-Jin Ding ◽  
Hao-Wen Guo ◽  
David Wei Zhang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Barrier Layer ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Plasma Pretreatment

Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment

2016 ◽  
Vol 3 (21) ◽  
pp. 1600340 ◽  
Author(s):  
Suk Won Park ◽  
Kiho Bae ◽  
Jun Woo Kim ◽  
Gyeong Beom Lee ◽  
Byoung-Ho Choi ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Oxygen Plasma ◽  
Atomic Layer ◽  
Chemical Protection ◽  
Layer Deposition ◽  
Plasma Pretreatment

Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment

2019 ◽  
Vol 40 (1) ◽  
pp. 012806 ◽  
Author(s):  
Hui Hao ◽  
Xiao Chen ◽  
Zhengcheng Li ◽  
Yang Shen ◽  
Hu Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Gallium Oxide ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Remote Plasma ◽  
Layer Deposition ◽  
Plasma Pretreatment

X-ray reflectometry and spectroscopic ellipsometry characterization of Al2O3 atomic layer deposition on HF-last and NH3 plasma pretreatment Si substrates

2007 ◽  
Vol 22 (5) ◽  
pp. 1214-1218 ◽  
Author(s):  
Hong-Liang Lu ◽  
Min Xu ◽  
Shi-Jin Ding ◽  
Wei Chen ◽  
David Wei Zhang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Film Thickness ◽  
Spectroscopic Ellipsometry ◽  
Atomic Layer ◽  
Si Substrate ◽  
Interfacial Film ◽  
X Ray ◽  
Si Substrates ◽  
Layer Deposition ◽  
Plasma Pretreatment

Al2O3 films are grown by atomic layer deposition (ALD) using trimethylaluminum and water as precursors on HF-last and NH3 plasma pretreatment Si substrates. The thickness, surface roughness, and density of Al2O3 films as well as the nature of their interlayers with Si substrates are characterized by x-ray reflectivity and spectroscopic ellipsometry techniques. The growth rates of Al2O3 films are 1.1 Å/cycle and 1.3 Å/cycle, respectively, on HF-last and NH3-plasma-nitrided surfaces. Al2O3 layer densities are rather independent of the number of growth cycles in all cases. The interfacial film thickness increases with the number of ALD cycles when deposited on an HF-last Si substrate. However, because SiOxNy inhibits oxygen diffusion, the interfacial film thickness is independent of the number of ALD cycles on the nitrided Si substrate.

Atomic-layer deposition of ZrO2 with a Si nitride barrier layer

2002 ◽  
Vol 81 (15) ◽  
pp. 2824-2826 ◽  
Author(s):  
Anri Nakajima ◽  
Toshirou Kidera ◽  
Hiroyuki Ishii ◽  
Shin Yokoyama
Keyword(s):  
Atomic Layer Deposition ◽  
Barrier Layer ◽  
Atomic Layer ◽  
Layer Deposition

Interfacial Tailoring for the Suppression of Impurities in GaN by In Situ Plasma Pretreatment via Atomic Layer Deposition

2019 ◽  
Vol 11 (38) ◽  
pp. 35382-35388 ◽  
Author(s):  
Sanjie Liu ◽  
Gang Zhao ◽  
Yingfeng He ◽  
Huiyun Wei ◽  
Yangfeng Li ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Plasma Pretreatment

Promoted photoelectrocatalytic hydrogen evolution of a type II structure via an Al2O3 recombination barrier layer deposited using atomic layer deposition

2017 ◽  
Vol 46 (32) ◽  
pp. 10734-10741 ◽  
Author(s):  
Yajun Wang ◽  
Weikun Bai ◽  
Haiquan Wang ◽  
Yao Jiang ◽  
Shanlei Han ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Hydrogen Evolution ◽  
Barrier Layer ◽  
Atomic Layer ◽  
Type Ii ◽  
Layer Deposition

The introduction of an Al2O3 recombination barrier layer at the interface between TiO2 and CdSe can effectively improve the PEC hydrogen evolution performance.

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