Structure and dielectric function of two- and single-domain ZnO epitaxial films

2007 ◽  
Vol 102 (11) ◽  
pp. 113505 ◽  
Author(s):  
M. Vinnichenko ◽  
N. Shevchenko ◽  
A. Rogozin ◽  
R. Grötzschel ◽  
A. Mücklich ◽  
...  
Keyword(s):  
Dielectric Function ◽  
Epitaxial Films ◽  
Single Domain

Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial films

2012 ◽  
Vol 24 (43) ◽  
pp. 435803 ◽  
Author(s):  
R C Jayasinghe ◽  
Y F Lao ◽  
A G U Perera ◽  
M Hammar ◽  
C F Cao ◽  
...  
Keyword(s):  
Indium Phosphide ◽  
Dielectric Function ◽  
Plasma Frequency ◽  
Epitaxial Films ◽  
P Type

Structural characteristics of ferroelectric phase transformations in single-domain epitaxial films

2004 ◽  
Vol 95 (12) ◽  
pp. 8118-8123 ◽  
Author(s):  
S. P. Alpay ◽  
I. B. Misirlioglu ◽  
A. Sharma ◽  
Z.-G. Ban
Keyword(s):  
Phase Transformations ◽  
Ferroelectric Phase ◽  
Structural Characteristics ◽  
Epitaxial Films ◽  
Single Domain

Precipitation in Al + 4% Cu Epitaxial Films

1968 ◽  
Vol 26 ◽  
pp. 384-385
Author(s):  
S. Herd ◽  
S. M. Mader
Keyword(s):  
Solid Solution ◽  
Bulk Material ◽  
Epitaxial Films ◽  
Detectable Change ◽  
Cu Films ◽  
Solution Treated ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Diffraction Patterns ◽  
Deposited Films

Single crystal films in (001) orientation, about 1500 Å thick, were produced by R-F sputtering of Al + 4 wt % Cu onto cleaved KCl at 150°C substrate temperature. The as-deposited films contained numerous θ-CuAl2 particles (C16 structure) about 0.1μ in size. They were transferred onto Mo screens, solution treated and rapidly cooled (within about ½ min) so as to retain a homogeneous solid solution. Subsequently, the films were aged in vacuum at various temperatures in order to induce precipitation and to compare structures and morphologies of precipitate particles in Al-Cu films with those found in age hardened bulk material.Aging for 3 weeks at 60°C or 48 hrs at 100°C did not produce any detectable change in high resolution micrographs or diffraction patterns. In this range Guinier-Preston zones (GP) form in quenched bulk material. The absence of GP in the present experiments in this aging range is perhaps due to the cooling rate employed, which might be more equivalent to an aged and reverted bulk material than to a quenched one.

Polarity Determination in Sphalerite and Wurtzite Structures

1990 ◽  
Vol 48 (2) ◽  
pp. 500-501
Author(s):  
Stuart McKernan ◽  
C. Barry Carter
Keyword(s):  
Opposite Polarity ◽  
Single Domain ◽  
Polar Material ◽  
Electron Microscopic ◽  
Dynamical Interaction ◽  
X Ray ◽  
Polarity Determination ◽  
The Absolute ◽  
Microscopic Techniques

The determination of the absolute polarity of a polar material is often crucial to the understanding of the defects which occur in such materials. Several methods exist by which this determination may be performed. In bulk, single-domain specimens, macroscopic techniques may be used, such as the different etching behavior, using the appropriate etchant, of surfaces with opposite polarity. X-ray measurements under conditions where Friedel’s law (which means that the intensity of reflections from planes of opposite polarity are indistinguishable) breaks down can also be used to determine the absolute polarity of bulk, single-domain specimens. On the microscopic scale, and particularly where antiphase boundaries (APBs), which separate regions of opposite polarity exist, electron microscopic techniques must be employed. Two techniques are commonly practised; the first [1], involves the dynamical interaction of hoLz lines which interfere constructively or destructively with the zero order reflection, depending on the crystal polarity. The crystal polarity can therefore be directly deduced from the relative intensity of these interactions.

Epitaxial growth manner and structure of superconducting oxide films

1990 ◽  
Vol 48 (4) ◽  
pp. 2-3
Author(s):  
Yoshichika Bando ◽  
Takahito Terashima ◽  
Kenji Iijima ◽  
Kazunuki Yamamoto ◽  
Kazuto Hirata ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
Film Surface ◽  
High Energy ◽  
Epitaxial Films ◽  
Layer By Layer ◽  
Initial Growth ◽  
In Situ Growth ◽  
High Quality ◽  
Activated Reactive Evaporation

The high quality thin films of high-Tc superconducting oxide are necessary for elucidating the superconducting mechanism and for device application. The recent trend in the preparation of high-Tc films has been toward “in-situ” growth of the superconducting phase at relatively low temperatures. The purpose of “in-situ” growth is to attain surface smoothness suitable for fabricating film devices but also to obtain high quality film. We present the investigation on the initial growth manner of YBCO by in-situ reflective high energy electron diffraction (RHEED) technique and on the structural and superconducting properties of the resulting ultrathin films below 100Å. The epitaxial films have been grown on (100) plane of MgO and SrTiO, heated below 650°C by activated reactive evaporation. The in-situ RHEED observation and the intensity measurement was carried out during deposition of YBCO on the substrate at 650°C. The deposition rate was 0.8Å/s. Fig. 1 shows the RHEED patterns at every stage of deposition of YBCO on MgO(100). All the patterns exhibit the sharp streaks, indicating that the film surface is atomically smooth and the growth manner is layer-by-layer.

Theoretical single-domain size of NiZn ferrite

1998 ◽  
Vol 08 (PR2) ◽  
pp. Pr2-389-Pr2-392 ◽  
Author(s):  
A. Aharoni ◽  
J. P. Jakubovics
Keyword(s):  
Domain Size ◽  
Single Domain

In-depth Analysis of the Impurities in GaN

1996 ◽  
Vol 1 ◽  
Author(s):  
A. P. Kovarsky ◽  
V. S. Strykanov
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Dynamic Range ◽  
Detection Limits ◽  
Background Level ◽  
Epitaxial Films ◽  
Depth Analysis ◽  
Lower Detection ◽  
Minimum Detection Level ◽  
Ion Yields ◽  
Secondary Ion

GaN epitaxial films were analyzed by Secondary Ion Mass Spectrometry (SIMS). Standard implanted samples were used to determine the appropriate analytical conditions for analysis of impurities. The dose and energy of implantation for selected elements (Mg, Al, Si, Zn, Cd, H, C and O) were chosen so the maximum impurity concentration was not more than 1020 atoms/cm3. The optimum analysis conditions were ascertained from the standards for each element, and the detection limits were deduced from the background levels of the implantation profiles. We demonstate that lower detection limits of 1015 atoms/cm3 with a dynamic range 103 − 105 are possible. Zn and Cd have low ion yields, so the minimum detection level for these elements is the background level of the detector. The detection limits of the other elements are determined by the contamination of an initial GaN matrix.

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