The improvement of retention time of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (ZrO2)-semiconductor transistors and capacitors by leakage current reduction using surface treatment
2013 ◽
Vol 34
(2)
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pp. 024003
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2016 ◽
Vol 31
(5)
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pp. 055019
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Keyword(s):
2021 ◽
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