Current shot noise characteristics in resonant tunneling step-barrier structures

2007 ◽  
Vol 102 (8) ◽  
pp. 083706 ◽  
Author(s):  
Rui Zhu ◽  
Yong Guo
Keyword(s):  
Shot Noise ◽  
Resonant Tunneling ◽  
Noise Characteristics

scholarly journals Quantum Transport Modeling of Current Noise in Quantum Devices

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 369-373
Author(s):  
Tanroku Miyoshi ◽  
Tetsuo Miyamoto ◽  
Matsuto Ogawa
Keyword(s):  
Shot Noise ◽  
Resonant Tunneling ◽  
Noise Suppression ◽  
Double Barrier ◽  
Quantum Devices ◽  
Noise Characteristics ◽  
Tunneling Diode ◽  
Coulomb Staircase ◽  
Symmetric Structures ◽  
Double Barrier Resonant Tunneling

We have studied the dependence of noise characteristics on the dimension of electron confinement of quantum devices at low temperature. By using the nonequilibrium Green's function method, we have found that in a double barrier resonant tunneling diode the shot noise is suppressed only around the bias voltage of the resonant tunneling and the noise suppression is more than half of the full shot noise in case of symmetric structures with thin barriers. On the other hand, in the Coulomb staircase characteristics of a quantum dot with equal barriers, the shot noise is suppressed on an average about half of the full shot noise while further drops are observed at the current-step voltages.

scholarly journals Shot-noise characteristics of triple-barrier resonant-tunneling diodes

2005 ◽  
Vol 71 (19) ◽  
Author(s):  
A. K. M. Newaz ◽  
W. Song ◽  
E. E. Mendez ◽  
Y. Lin ◽  
J. Nitta
Keyword(s):  
Shot Noise ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes ◽  
Noise Characteristics

scholarly journals Enhanced Shot Noise in Resonant Tunneling via Interacting Localized States

2003 ◽  
Vol 91 (13) ◽  
Author(s):  
S. S. Safonov ◽  
A. K. Savchenko ◽  
D. A. Bagrets ◽  
O. N. Jouravlev ◽  
Y. V. Nazarov ◽  
...  
Keyword(s):  
Shot Noise ◽  
Resonant Tunneling ◽  
Localized States

Probing Pauli blocking with shot noise in resonant tunneling diodes: Experiment and theory

2007 ◽  
Vol 75 (12) ◽  
Author(s):  
I. A. Maione ◽  
M. Macucci ◽  
G. Iannaccone ◽  
G. Basso ◽  
B. Pellegrini ◽  
...  
Keyword(s):  
Shot Noise ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Pauli Blocking ◽  
Tunneling Diodes

Noise test method for dual-gate MOSFET device

2019 ◽  
Vol 33 (31) ◽  
pp. 1950387
Author(s):  
Xiaofei Jia ◽  
Wenhao Chen ◽  
Bing Ding ◽  
Liang He
Keyword(s):  
Shot Noise ◽  
Thermal Noise ◽  
Drain Current ◽  
Test Method ◽  
Current Noise ◽  
Electronic Components ◽  
Positive Role ◽  
Noise Characteristics ◽  
20 Nm ◽  
Device Noise

In recent years, with the development of mesoscopic physics and nanoelectronics, the research on noise and testing technology of electronic components has been developed. It is well known that noise can characterize the transmission characteristics of carriers in nanoscale electronic components. With the continuous shrinking of the device size, the carrier transport of nanoscale MOSFET devices has been gradually transformed from the traditional drift-diffusion to become the quasi-ballistic or ballistic transport, and its current noise contains granular and thermal noise. The paper by Jeon et al. [The first observation of shot noise characteristics in 10-nm scale MOSFETs, in Proc. 2009 Symp. VLSI Technology (IEEE, Honolulu, 2009), pp. 48–49] presents the variation relation of 20 nm MOSFET current noise with source–drain current and voltage, and its current noise characteristic is between thermal noise and shot noise, so 20 nm MOSFET current noise is shot noise and thermal noise. The paper by Navid et al. [J. Appl. Phys. 101 (2007) 124501] shows through simulation that the 60 nm MOSFET current noise is suppressed shot noise and thermal noise. At present, the current noise has seriously affected the basic performance of the device, thus the circuit cannot work normally. Therefore, it is necessary to study the generation mechanism and characteristics of current noise in electronic components so as to suppress device noise, which can not only realize the reduction of device noise, but also play a positive role in the work-efficiency, life-span and reliability of electronic components.

Fabrication and Shot Noise Characteristics of Ultra-Small Split-Gate GaAs Quantum Dots

2009 ◽  
Vol 54 (4) ◽  
pp. 1594-1598
Author(s):  
Youngsang Kim ◽  
Yohan Seo ◽  
Hankyung Jeon ◽  
Heejun Jeong
Keyword(s):  
Quantum Dots ◽  
Shot Noise ◽  
Noise Characteristics

scholarly journals Enhanced Shot Noise in Resonant Tunneling: Theory and Experiment

1998 ◽  
Vol 80 (5) ◽  
pp. 1054-1057 ◽  
Author(s):  
G. Iannaccone ◽  
G. Lombardi ◽  
M. Macucci ◽  
B. Pellegrini
Keyword(s):  
Shot Noise ◽  
Resonant Tunneling ◽  
Theory And Experiment ◽  
Tunneling Theory
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