Effects of inelastic-scattering on the current-voltage and shot noise characteristics in resonant tunneling structures

2007 ◽  
Author(s):  
Van-Nam Do ◽  
P. Dollfus ◽  
V. L. Nguyen
Keyword(s):  
Inelastic Scattering ◽  
Shot Noise ◽  
Resonant Tunneling ◽  
Noise Characteristics ◽  
Current Voltage

scholarly journals Quantum Transport Modeling of Current Noise in Quantum Devices

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 369-373
Author(s):  
Tanroku Miyoshi ◽  
Tetsuo Miyamoto ◽  
Matsuto Ogawa
Keyword(s):  
Shot Noise ◽  
Resonant Tunneling ◽  
Noise Suppression ◽  
Double Barrier ◽  
Quantum Devices ◽  
Noise Characteristics ◽  
Tunneling Diode ◽  
Coulomb Staircase ◽  
Symmetric Structures ◽  
Double Barrier Resonant Tunneling

We have studied the dependence of noise characteristics on the dimension of electron confinement of quantum devices at low temperature. By using the nonequilibrium Green's function method, we have found that in a double barrier resonant tunneling diode the shot noise is suppressed only around the bias voltage of the resonant tunneling and the noise suppression is more than half of the full shot noise in case of symmetric structures with thin barriers. On the other hand, in the Coulomb staircase characteristics of a quantum dot with equal barriers, the shot noise is suppressed on an average about half of the full shot noise while further drops are observed at the current-step voltages.

scholarly journals Shot-noise characteristics of triple-barrier resonant-tunneling diodes

2005 ◽  
Vol 71 (19) ◽  
Author(s):  
A. K. M. Newaz ◽  
W. Song ◽  
E. E. Mendez ◽  
Y. Lin ◽  
J. Nitta
Keyword(s):  
Shot Noise ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes ◽  
Noise Characteristics

scholarly journals Enhanced Shot Noise in Resonant Tunneling via Interacting Localized States

2003 ◽  
Vol 91 (13) ◽  
Author(s):  
S. S. Safonov ◽  
A. K. Savchenko ◽  
D. A. Bagrets ◽  
O. N. Jouravlev ◽  
Y. V. Nazarov ◽  
...  
Keyword(s):  
Shot Noise ◽  
Resonant Tunneling ◽  
Localized States

scholarly journals Current-Voltage Characteristic and Shot Noise of Shift Current Photovoltaics

2018 ◽  
Vol 121 (26) ◽  
Author(s):  
Takahiro Morimoto ◽  
Masao Nakamura ◽  
Masashi Kawasaki ◽  
Naoto Nagaosa
Keyword(s):  
Shot Noise ◽  
Voltage Characteristic ◽  
Current Voltage Characteristic ◽  
Current Voltage

scholarly journals Monte Carlo Investigation of Shot-noise Suppression in Nondegenerate Ballistic and Diffusive Transport Regimes

2000 ◽  
Vol 53 (1) ◽  
pp. 3 ◽  
Author(s):  
L. Reggiani ◽  
A. Reklaitis ◽  
T. González ◽  
J. Mateos ◽  
D. Pardo ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Active Region ◽  
Inelastic Scattering ◽  
Shot Noise ◽  
Noise Suppression ◽  
Signal To Noise Ratio ◽  
Diffusive Transport ◽  
Poisson Solver ◽  
Diffusive Regime ◽  
Shot Noise Suppression

We review recent theoretical investigations of shot-noise suppression in nondegenerate semiconductor structures surrounded by two contacts acting as thermal reservoirs. Calculations make use of an ensemble Monte Carlo simulator self-consistently coupled with a one-dimensional Poisson solver. By taking the doping of the injecting contacts and the applied voltage as variable parameters, the influence of elastic and inelastic scattering as well as of tunneling between heterostructures in the active region is investigated. In the case of a homogeneous structure at T = 300 K the transition from ballistic to diffusive transport regimes under different contact injecting statistics is analysed and discussed. Provided significant space-charge effects take place inside the active region, long-range Coulomb interaction is found to play an essential role in suppressing shot noise at applied voltages much higher than the thermal value. In the elastic diffusive regime, momentum space dimensionality is found to modify the suppression factor γ, which within numerical uncertainty takes values respectively of about ⅓, ½ and 0·7 in the 3D, 2D and 1D cases. In the inelastic diffusive regime, shot noise is suppressed to the thermal value. In the case of single and multiple barrier non-resonant heterostructures made by GaAs/AlGaAs at 77 K, the mechanism of suppression is identified in the carrier inhibition to come back to the emitter contact after having been reflected from a barrier. This condition is realised in the presence of strong inelastic scattering associated with emission of optical phonons. At increasing applied voltages for a two-barrier structure, shot noise is suppressed up to about a factor of 0·50 in close analogy with the corresponding resonant barrier-diode. For an increasing number of barriers, shot noise is found to be systematically suppressed to a more significant level by following approximately a 1/(N + 1) behaviour, N being the number of barriers. This mechanism of suppression is expected to conveniently improve the signal-to-noise ratio of these devices.

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