Theoretical investigation of noise characteristics of double-barrier resonant-tunneling systems

1991 ◽  
Vol 43 (5) ◽  
pp. 4534-4537 ◽  
Author(s):  
L. Y. Chen ◽  
C. S. Ting
Keyword(s):  
Theoretical Investigation ◽  
Resonant Tunneling ◽  
Double Barrier ◽  
Noise Characteristics ◽  
Double Barrier Resonant Tunneling

scholarly journals Quantum Transport Modeling of Current Noise in Quantum Devices

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 369-373
Author(s):  
Tanroku Miyoshi ◽  
Tetsuo Miyamoto ◽  
Matsuto Ogawa
Keyword(s):  
Shot Noise ◽  
Resonant Tunneling ◽  
Noise Suppression ◽  
Double Barrier ◽  
Quantum Devices ◽  
Noise Characteristics ◽  
Tunneling Diode ◽  
Coulomb Staircase ◽  
Symmetric Structures ◽  
Double Barrier Resonant Tunneling

We have studied the dependence of noise characteristics on the dimension of electron confinement of quantum devices at low temperature. By using the nonequilibrium Green's function method, we have found that in a double barrier resonant tunneling diode the shot noise is suppressed only around the bias voltage of the resonant tunneling and the noise suppression is more than half of the full shot noise in case of symmetric structures with thin barriers. On the other hand, in the Coulomb staircase characteristics of a quantum dot with equal barriers, the shot noise is suppressed on an average about half of the full shot noise while further drops are observed at the current-step voltages.

Noise characteristics of double-barrier resonant-tunneling structures below 10 kHz

1990 ◽  
Vol 41 (12) ◽  
pp. 8388-8391 ◽  
Author(s):  
Yuan P. Li ◽  
A. Zaslavsky ◽  
D. C. Tsui ◽  
M. Santos ◽  
M. Shayegan
Keyword(s):  
Resonant Tunneling ◽  
Double Barrier ◽  
Noise Characteristics ◽  
Double Barrier Resonant Tunneling

Simulation of GaAs/AlxGa1-xAs/InyGa1-y As Double-Barrier Resonant Tunneling Structures

2011 ◽  
Vol 399-401 ◽  
pp. 1093-1096
Author(s):  
Yuan Ming Zhou
Keyword(s):  
Transmission Coefficient ◽  
Current Density ◽  
Resonant Tunneling ◽  
Indium Content ◽  
Rapid Decrease ◽  
Supply Function ◽  
Double Barrier ◽  
Resonant Condition ◽  
Zero Bias ◽  
Double Barrier Resonant Tunneling

We study the resonant tunneling in symmetric GaAs/AlxGa1-xAs/InyGa1-yAs double-barrier resonant-tunneling structures. Effects of three factors on the resonant tunneling are simulated and discussed. On increasing the barrier height, the decrease of current density is attributed to the interplay between the increase of the supply function of available electrons and the rapid decrease of the transmission coefficient through the device area, and the lowest Indium content for realizing the zero-bias resonant tunneling increases. With the increase of the barrier (well) width, the decrease of the current density can be explained by the fact that both the supply function and the transmission coefficient decreases, and the lowest Indium content meeting the zero-bias resonant condition decreases.

Magnetic-field-induced modulation of intersubband scattering in a double-barrier resonant-tunneling structure

1996 ◽  
Vol 53 (20) ◽  
pp. 13651-13655 ◽  
Author(s):  
P. D. Buckle ◽  
J. W. Cockburn ◽  
M. S. Skolnick ◽  
R. Grey ◽  
G. Hill ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Resonant Tunneling ◽  
Double Barrier ◽  
Double Barrier Resonant Tunneling ◽  
Resonant Tunneling Structure
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