Enhancement of Jc in MgB2 thin films on Si substrate with pinning centers introduced by deposition in O2 atmosphere

2007 ◽  
Vol 102 (7) ◽  
pp. 076114 ◽  
Author(s):  
M. Haruta ◽  
T. Fujiyoshi ◽  
R. Kajita ◽  
K. Yonekura ◽  
T. Sueyoshi ◽  
...  
Keyword(s):  
Thin Films ◽  
Si Substrate ◽  
Pinning Centers ◽  
Mgb2 Thin Films

Investigation of magnetic properties of MgB2 thin films on NbN/Si substrate

2004 ◽  
Vol 412-414 ◽  
pp. 201-205 ◽  
Author(s):  
Akihiko Nishida ◽  
Chihiro Taka ◽  
Stefan Chromik ◽  
Rudolf Durny
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Si Substrate ◽  
Mgb2 Thin Films

Investigation of lower critical fields of MgB2 thin films on SiC/Si substrate with parallel magnetic fields

2006 ◽  
Vol 435 (1-2) ◽  
pp. 74-77 ◽  
Author(s):  
Akihiko Nishida ◽  
Chihiro Taka ◽  
Stefan Chromik ◽  
Rudolf Durny
Keyword(s):  
Thin Films ◽  
Magnetic Fields ◽  
Si Substrate ◽  
Critical Fields ◽  
Mgb2 Thin Films ◽  
Parallel Magnetic Fields

Artificial pinning centers created by Fe2O3 coating on MgB2 thin films

2012 ◽  
Vol 473 ◽  
pp. 1-5 ◽  
Author(s):  
E. Taylan Koparan ◽  
A. Surdu ◽  
A. Sidorenko ◽  
E. Yanmaz
Keyword(s):  
Thin Films ◽  
Pinning Centers ◽  
Artificial Pinning Centers ◽  
Mgb2 Thin Films

Critical properties of MgB2 thin films on NbN/Si substrate under perpendicular magnetic fields

2005 ◽  
Vol 426-431 ◽  
pp. 340-344 ◽  
Author(s):  
Akihiko Nishida ◽  
Chihiro Taka ◽  
Stefan Chromik ◽  
Rudolf Durny
Keyword(s):  
Thin Films ◽  
Magnetic Fields ◽  
Critical Properties ◽  
Si Substrate ◽  
Mgb2 Thin Films

Transmission Electron Microscopy studies of the vacancy ordering in YSI2-X thin films

1991 ◽  
Vol 49 ◽  
pp. 562-563
Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Thin Films ◽  
Diffraction Pattern ◽  
Annealing Temperature ◽  
Lattice Mismatch ◽  
Si Substrate ◽  
Metal Thin Films ◽  
Transmission Electron ◽  
Vacancy Ordering

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.

Phase transformation and preferred orientation in carboxylate derived ZrO2 thin films on silicon substates

1992 ◽  
Vol 7 (11) ◽  
pp. 3065-3071 ◽  
Author(s):  
Peir-Yung Chu ◽  
Isabelle Campion ◽  
Relva C. Buchanan
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Phase Transformation ◽  
Heating Rate ◽  
Tetragonal Phase ◽  
Monoclinic Phase ◽  
Preferred Orientation ◽  
Si Substrate ◽  
Interfacial Diffusion ◽  
Deposited Films

Phase transformation and preferred orientation in ZrO2 thin films, deposited on Si(111) and Si(100) substrates, and prepared by heat treatment from carboxylate solution precursors were investigated. The deposited films were amorphous below 450 °C, transforming gradually to the tetragonal and monoclinic phases on heating. The monoclinic phase developed from the tetragonal phase displacively, and exhibited a strong (111) preferred orientation at temperature as low as 550 °C. The degree of preferred orientation and the tetragonal-to-monoclinic phase transformation were controlled by heating rate, soak temperature, and time. Interfacial diffusion into the film from the Si substrate was negligible at 700 °C and became significant only at 900 °C, but for films thicker than 0.5 μm, overall preferred orientation exceeded 90%.

Effects of surface damage on critical current density in MgB2 thin films

2021 ◽  
Vol 22 ◽  
pp. 14-19
Author(s):  
Soon-Gil Jung ◽  
Duong Pham ◽  
Jung Min Lee ◽  
Yoonseok Han ◽  
Won Nam Kang ◽  
...  
Keyword(s):  
Thin Films ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Surface Damage ◽  
Mgb2 Thin Films

Correction to “Influence of the Si Substrate on the Transport and Magnetotransport Properties of Nanostructured Fe-Ag Thin Films” [Nov 09 2784-2787]

2009 ◽  
Vol 45 (9) ◽  
pp. 3365-3365
Author(s):  
Javier Alonso ◽  
Iaki Orue ◽  
M. Fdez-Gubieda ◽  
Jos Manuel Barandiaran ◽  
Jess Chaboy ◽  
...  
Keyword(s):  
Thin Films ◽  
Si Substrate

Studies on Magnetron-Sputtered NiO/Si3N4 Thin Films

2018 ◽  
Vol 17 (03) ◽  
pp. 1760039
Author(s):  
K. M. Dhanisha ◽  
M. Manoj Christopher ◽  
M. Abinaya ◽  
P. Deepak Raj ◽  
M. Sridharan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Smooth Surface ◽  
Deposition Time ◽  
Si Substrate ◽  
X Ray ◽  
Coating Time ◽  
Deposited Films ◽  
Nio Films ◽  
Scanning Electron

The present work deals with NiO/Si3N4 layers formed by depositing nickel oxide (NiO) thin films over silicon nitrate (Si3N[Formula: see text] thin films. NiO films were coated on Si3N4-coated Si substrate using magnetron sputtering method by changing duration of coating time and were analyzed using X-ray diffractometer, field emission-scanning electron microscopy, UV–Vis spectrophotometer and four-point probe method to study the influence of thickness on physical properties. Crystallinity of the deposited films increases with increase in thickness. All films exhibited spherical-like structure, and with increase in deposition time, grains are coalesced to form smooth surface morphology. The optical bandgap of NiO films was found to decrease from 3.31[Formula: see text]eV to 3.22[Formula: see text]eV with upsurge in the thickness. The film deposited for 30[Formula: see text]min exhibits temperature coefficient resistance of [Formula: see text]1.77%/[Formula: see text]C as measured at 80[Formula: see text]C.

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