Critical properties of MgB2 thin films on NbN/Si substrate under perpendicular magnetic fields

2005 ◽  
Vol 426-431 ◽  
pp. 340-344 ◽  
Author(s):  
Akihiko Nishida ◽  
Chihiro Taka ◽  
Stefan Chromik ◽  
Rudolf Durny
Keyword(s):  
Thin Films ◽  
Magnetic Fields ◽  
Critical Properties ◽  
Si Substrate ◽  
Mgb2 Thin Films

Investigation of lower critical fields of MgB2 thin films on SiC/Si substrate with parallel magnetic fields

2006 ◽  
Vol 435 (1-2) ◽  
pp. 74-77 ◽  
Author(s):  
Akihiko Nishida ◽  
Chihiro Taka ◽  
Stefan Chromik ◽  
Rudolf Durny
Keyword(s):  
Thin Films ◽  
Magnetic Fields ◽  
Si Substrate ◽  
Critical Fields ◽  
Mgb2 Thin Films ◽  
Parallel Magnetic Fields

Investigation of magnetic properties of MgB2 thin films on NbN/Si substrate

2004 ◽  
Vol 412-414 ◽  
pp. 201-205 ◽  
Author(s):  
Akihiko Nishida ◽  
Chihiro Taka ◽  
Stefan Chromik ◽  
Rudolf Durny
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Si Substrate ◽  
Mgb2 Thin Films

scholarly journals Enhancement of the critical current density in FeO-coated MgB2 thin films at high magnetic fields

2011 ◽  
Vol 2 ◽  
pp. 809-813 ◽  
Author(s):  
Andrei E Surdu ◽  
Hassan H Hamdeh ◽  
I A Al-Omari ◽  
David J Sellmyer ◽  
Alexei V Socrovisciuc ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Fields ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
High Magnetic Fields ◽  
Magnetization Hysteresis ◽  
Current Densities ◽  
Mgb2 Thin Films ◽  
Feo Nanoparticles

The effect of depositing FeO nanoparticles with a diameter of 10 nm onto the surface of MgB2 thin films on the critical current density was studied in comparison with the case of uncoated MgB2 thin films. We calculated the superconducting critical current densities (J c) from the magnetization hysteresis (M–H) curves for both sets of samples and found that the J c value of FeO-coated films is higher at all fields and temperatures than the J c value for uncoated films, and that it decreases to ~105 A/cm2 at B = 1 T and T = 20 K and remains approximately constant at higher fields up to 7 T.

scholarly journals Influence of carbon-ion irradiation on the superconducting critical properties of MgB2 thin films

2019 ◽  
Vol 32 (2) ◽  
pp. 025006 ◽  
Author(s):  
Soon-Gil Jung ◽  
Seung-Ku Son ◽  
Duong Pham ◽  
Weon Cheol Lim ◽  
Jonghan Song ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Irradiation ◽  
Critical Properties ◽  
Carbon Ion ◽  
Mgb2 Thin Films

Enhancement of Jc in MgB2 thin films on Si substrate with pinning centers introduced by deposition in O2 atmosphere

2007 ◽  
Vol 102 (7) ◽  
pp. 076114 ◽  
Author(s):  
M. Haruta ◽  
T. Fujiyoshi ◽  
R. Kajita ◽  
K. Yonekura ◽  
T. Sueyoshi ◽  
...  
Keyword(s):  
Thin Films ◽  
Si Substrate ◽  
Pinning Centers ◽  
Mgb2 Thin Films

Transmission Electron Microscopy studies of the vacancy ordering in YSI2-X thin films

1991 ◽  
Vol 49 ◽  
pp. 562-563
Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Thin Films ◽  
Diffraction Pattern ◽  
Annealing Temperature ◽  
Lattice Mismatch ◽  
Si Substrate ◽  
Metal Thin Films ◽  
Transmission Electron ◽  
Vacancy Ordering

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.

Phase transformation and preferred orientation in carboxylate derived ZrO2 thin films on silicon substates

1992 ◽  
Vol 7 (11) ◽  
pp. 3065-3071 ◽  
Author(s):  
Peir-Yung Chu ◽  
Isabelle Campion ◽  
Relva C. Buchanan
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Phase Transformation ◽  
Heating Rate ◽  
Tetragonal Phase ◽  
Monoclinic Phase ◽  
Preferred Orientation ◽  
Si Substrate ◽  
Interfacial Diffusion ◽  
Deposited Films

Phase transformation and preferred orientation in ZrO2 thin films, deposited on Si(111) and Si(100) substrates, and prepared by heat treatment from carboxylate solution precursors were investigated. The deposited films were amorphous below 450 °C, transforming gradually to the tetragonal and monoclinic phases on heating. The monoclinic phase developed from the tetragonal phase displacively, and exhibited a strong (111) preferred orientation at temperature as low as 550 °C. The degree of preferred orientation and the tetragonal-to-monoclinic phase transformation were controlled by heating rate, soak temperature, and time. Interfacial diffusion into the film from the Si substrate was negligible at 700 °C and became significant only at 900 °C, but for films thicker than 0.5 μm, overall preferred orientation exceeded 90%.

Effects of surface damage on critical current density in MgB2 thin films

2021 ◽  
Vol 22 ◽  
pp. 14-19
Author(s):  
Soon-Gil Jung ◽  
Duong Pham ◽  
Jung Min Lee ◽  
Yoonseok Han ◽  
Won Nam Kang ◽  
...  
Keyword(s):  
Thin Films ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Surface Damage ◽  
Mgb2 Thin Films

Correction to “Influence of the Si Substrate on the Transport and Magnetotransport Properties of Nanostructured Fe-Ag Thin Films” [Nov 09 2784-2787]

2009 ◽  
Vol 45 (9) ◽  
pp. 3365-3365
Author(s):  
Javier Alonso ◽  
Iaki Orue ◽  
M. Fdez-Gubieda ◽  
Jos Manuel Barandiaran ◽  
Jess Chaboy ◽  
...  
Keyword(s):  
Thin Films ◽  
Si Substrate
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