Size- and temperature-independent zero-offset current-voltage characteristics of GaInP/GaAs collector-up tunnelling-collector heterojunction bipolar transistors

2001 ◽  
Vol 37 (4) ◽  
pp. 252 ◽  
Author(s):  
K. Mochizuki ◽  
T. Oka ◽  
I. Ohbu
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Zero Offset ◽  
Independent Zero

Improved Current Gain in GaN/SiC Heterojunction Bipolar Transistors by Insertion of Ultra-Thin AlN Layer at Emitter-Junction

2009 ◽  
Vol 615-617 ◽  
pp. 979-982 ◽  
Author(s):  
Hiroki Miyake ◽  
Tsunenobu Kimoto ◽  
Jun Suda
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Current Gain ◽  
Carrier Injection ◽  
Voltage Measurement ◽  
Injection Efficiency ◽  
Conduction Band Offset ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Emitter Junction

GaN/SiC Heterojunction Bipolar Transistors (HBTs) with ultra-thin AlN insertion layers at the n-GaN/p-SiC emitter junction are proposed to improve carrier injection efficiency. The current-voltage characteristics of n-GaN/AlN/p-SiC heterojunctions have exhibited very small reverse leakage and good rectification. The capacitance-voltage measurement have revealed that the conduction band offset between n-GaN and p-SiC has been reduced from -0.74 eV to -0.54 eV by insertion of AlN, indicating that the GaN/AlN/SiC heterojunction may show better electron-injection efficiency. A significantly improved common-base current gain (α~0.2) is obtained for GaN/AlN/SiC HBTs with initial N* pre-irradiation, while it was very low (α~0.001) for GaN/SiC HBTs without AlN layers.

scholarly journals Thermal Effect and Frequency Response Analyses on Heterojunction Bipolar Power Transistor

2001 ◽  
Vol 24 (4) ◽  
pp. 265-287
Author(s):  
K. F. Yarn ◽  
K. H. Ho
Keyword(s):  
Frequency Response ◽  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Carrier Transport ◽  
Bipolar Transistors ◽  
Junction Temperature ◽  
Current Gain ◽  
Material System ◽  
Current Voltage ◽  
Analytical Thermal Model

Heterojunction bipolar transistors (HBT) based on Npn AlGaAs/GaAs material system have attracted considerable attention for microwave power and digital applications due to their high speed and high current capabilities. In this paper, a numerical model based on the Npn AlGaAs/GaAs HBT structure for the carrier transport is presented. Three figures of merit on device operation, current gain, cut-off frequency and maximum oscillation frequency are calculated. Besides, thermal instability plays an important role on power HBT resulted from the low thermal conductivity in GaAs. The generated heat will increase the junction temperature and cause self-destruction. Therefore, the thermal runaway study of the junction temperature, current–voltage (IV) characteristics and frequency response using an analytical thermal model is described.

A Proposal to Apply Effective Acceptor Level for Representing Increased Ionization Ratio of Mg Acceptors in Extrinsically Photon-Recycled GaN

2014 ◽  
Vol 778-780 ◽  
pp. 1189-1192 ◽  
Author(s):  
Kazuhiro Mochizuki ◽  
Tomoyoshi Mishima ◽  
Yuya Ishida ◽  
Yoshitomo Hatakeyama ◽  
Kazuki Nomoto ◽  
...  
Keyword(s):  
Transmission Line ◽  
Bipolar Transistors ◽  
Electrode Spacing ◽  
Acceptor Level ◽  
Transmission Line Model ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type ◽  
Diode Current ◽  
Ionization Ratio

An effective acceptor level (EAeff) for representing the increased ionization ratio in extrinsically photon-recycled p-type GaN is proposed.EAeffat 300 K in the range of 0.1360.145 eV is found to reproduce current/voltage characteristics of transmission-line-model patterns formed with GaN p-n junction epitaxial layers and electrode spacing of 320 μm when the p-n diode current flowing through an 80×100-μm electrode is 90 mA. WhenEAeffis decreased from 0.160 eV to 0.145 eV, the on-resistance of 18×100-μm GaN bipolar transistors is predicted to be reduced by more than 50%.

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