Suppression of emitter size effect on the current‐voltage characteristics of AlGaAs/GaAs heterojunction bipolar transistors

1990 ◽  
Vol 56 (10) ◽  
pp. 937-939 ◽  
Author(s):  
S. Noor Mohammad ◽  
J. Chen ◽  
J.‐I. Chyi ◽  
H. Morkoç
Keyword(s):  
Size Effect ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Current Voltage ◽  
Current Voltage Characteristics

Improved Current Gain in GaN/SiC Heterojunction Bipolar Transistors by Insertion of Ultra-Thin AlN Layer at Emitter-Junction

2009 ◽  
Vol 615-617 ◽  
pp. 979-982 ◽  
Author(s):  
Hiroki Miyake ◽  
Tsunenobu Kimoto ◽  
Jun Suda
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Current Gain ◽  
Carrier Injection ◽  
Voltage Measurement ◽  
Injection Efficiency ◽  
Conduction Band Offset ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Emitter Junction

GaN/SiC Heterojunction Bipolar Transistors (HBTs) with ultra-thin AlN insertion layers at the n-GaN/p-SiC emitter junction are proposed to improve carrier injection efficiency. The current-voltage characteristics of n-GaN/AlN/p-SiC heterojunctions have exhibited very small reverse leakage and good rectification. The capacitance-voltage measurement have revealed that the conduction band offset between n-GaN and p-SiC has been reduced from -0.74 eV to -0.54 eV by insertion of AlN, indicating that the GaN/AlN/SiC heterojunction may show better electron-injection efficiency. A significantly improved common-base current gain (α~0.2) is obtained for GaN/AlN/SiC HBTs with initial N* pre-irradiation, while it was very low (α~0.001) for GaN/SiC HBTs without AlN layers.

scholarly journals Investigation of emitter size effect in InP/InGaAsSb/InGaAs double heterojunction bipolar transistors

2012 ◽  
Vol 101 (7) ◽  
pp. 073507 ◽  
Author(s):  
S. Y. Wang ◽  
C. A. Chang ◽  
C. M. Chang ◽  
S. H. Chen ◽  
F. Ren ◽  
...  
Keyword(s):  
Size Effect ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Double Heterojunction
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