Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface

2007 ◽  
Vol 91 (12) ◽  
pp. 123123 ◽  
Author(s):  
Tomonori Nishimura ◽  
Koji Kita ◽  
Akira Toriumi
Keyword(s):  
Fermi Level ◽  
Fermi Level Pinning ◽  
Gap States

Gap state distribution and Fermi level pinning in monolayer to multilayer MoS2 field effect transistors

Nanoscale ◽  
2020 ◽  
Vol 12 (16) ◽  
pp. 8883-8889 ◽  
Author(s):  
Ronen Dagan ◽  
Yonatan Vaknin ◽  
Yossi Rosenwaks
Keyword(s):  
Transition Metal ◽  
Fermi Level ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Surface ◽  
Volume Ratio ◽  
Transition Metal Dichalcogenide ◽  
State Distribution ◽  
Fermi Level Pinning ◽  
Gap States

Gap states and Fermi level pinning play an important role in all semiconductor devices, but even more in transition metal dichalcogenide-based devices due to their high surface to volume ratio and the absence of intralayer dangling bonds.

Increase in Schottky Barrier Height in the CoSi2/Si (100) Interface Caused by Hydrogen

1992 ◽  
Vol 281 ◽  
Author(s):  
A. D. Marwick ◽  
M. O. Aboelfotoh ◽  
R. Casparis
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Interface States ◽  
Hydrogen Atoms ◽  
Fermi Level Pinning ◽  
Gap States

ABSTRACTIt is shown that the presence of 8 × 1015 hydrogen atoms/cm2 in the CoSi2/Si (100) interface causes an increase in the Schottky barrier height of 120 meV, and that passivation of dopants in the substrate is not the cause of this change. The data is evidence that the position of the Fermi level in this interface is controlled by defect-related interface states. After hydrogenation the Schottky barrier height agrees with that predicted by theory for Fermi level pinning by virtual gap states of the silicon.

Fermi Level Pinning by Gap States in Organic Semiconductors

2013 ◽  
Vol 110 (3) ◽  
Author(s):  
S. Yogev ◽  
R. Matsubara ◽  
M. Nakamura ◽  
U. Zschieschang ◽  
H. Klauk ◽  
...  
Keyword(s):  
Fermi Level ◽  
Organic Semiconductors ◽  
Fermi Level Pinning ◽  
Gap States

scholarly journals Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier

2016 ◽  
Vol 2 (4) ◽  
pp. e1600069 ◽  
Author(s):  
Yuanyue Liu ◽  
Paul Stradins ◽  
Su-Huai Wei
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Van Der Waals ◽  
Two Dimensional ◽  
Fermi Level Pinning ◽  
Fundamental Properties ◽  
2D Semiconductors ◽  
Semiconductor Junction ◽  
Device Applications ◽  
Gap States

Two-dimensional (2D) semiconductors have shown great potential for electronic and optoelectronic applications. However, their development is limited by a large Schottky barrier (SB) at the metal-semiconductor junction (MSJ), which is difficult to tune by using conventional metals because of the effect of strong Fermi level pinning (FLP). We show that this problem can be overcome by using 2D metals, which are bounded with 2D semiconductors through van der Waals (vdW) interactions. This success relies on a weak FLP at the vdW MSJ, which is attributed to the suppression of metal-induced gap states. Consequently, the SB becomes tunable and can vanish with proper 2D metals (for example, H-NbS2). This work not only offers new insights into the fundamental properties of heterojunctions but also uncovers the great potential of 2D metals for device applications.

Fermi-level pinning appears upon weak electrode-organic contact without gap states: A universal phenomenon

2017 ◽  
Vol 48 ◽  
pp. 172-178 ◽  
Author(s):  
Jin-Peng Yang ◽  
Lin-Tai Shang ◽  
Fabio Bussolotti ◽  
Li-Wen Cheng ◽  
Wen-Qing Wang ◽  
...  
Keyword(s):  
Fermi Level ◽  
Fermi Level Pinning ◽  
Gap States

Investigations of Fermi Level Pinning and Dipole Formation in TiN/HfO2/SiO2/Si Stacks

2012 ◽  
Vol 629 ◽  
pp. 139-144
Author(s):  
Jing Zhang ◽  
Xiao Lei Wang ◽  
Kai Han ◽  
Wen Wu Wang ◽  
Chao Zhao ◽  
...  
Keyword(s):  
Fermi Level ◽  
Charge Neutrality ◽  
Charge Neutrality Level ◽  
Fermi Level Pinning ◽  
Flatband Voltage ◽  
Interfacial Gap ◽  
Gap States

Fermi level pinning (FLP) and dipole formation in TiN/HfO2/SiO2/Si stacks are investigated. The magnitude of FLP at TiN/HfO2 interface is estimated to be ~0 V based on dipole theory using concepts of interfacial gap states and charge neutrality level (CNL). The dipole amount at HfO2/SiO2 interface is experimentally extracted to be +0.33 V. These results show that dipole formation at HfO2/SiO2 interface is important for tuning flatband voltage of the TiN/HfO2/SiO2/Si stacks. Possible origin of dipole formation is demonstrated and attributed to be lower CNL of HfO2 compared with that of SiO2/Si stacks.

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