Virtual gap states and Fermi level pinning by adsorbates at semiconductor surfaces

1986 ◽  
Vol 4 (4) ◽  
pp. 1085 ◽  
Author(s):  
W. Mönch
Keyword(s):  
Fermi Level ◽  
Semiconductor Surfaces ◽  
Fermi Level Pinning ◽  
Gap States

Gap state distribution and Fermi level pinning in monolayer to multilayer MoS2 field effect transistors

Nanoscale ◽  
2020 ◽  
Vol 12 (16) ◽  
pp. 8883-8889 ◽  
Author(s):  
Ronen Dagan ◽  
Yonatan Vaknin ◽  
Yossi Rosenwaks
Keyword(s):  
Transition Metal ◽  
Fermi Level ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Surface ◽  
Volume Ratio ◽  
Transition Metal Dichalcogenide ◽  
State Distribution ◽  
Fermi Level Pinning ◽  
Gap States

Gap states and Fermi level pinning play an important role in all semiconductor devices, but even more in transition metal dichalcogenide-based devices due to their high surface to volume ratio and the absence of intralayer dangling bonds.

Increase in Schottky Barrier Height in the CoSi2/Si (100) Interface Caused by Hydrogen

1992 ◽  
Vol 281 ◽  
Author(s):  
A. D. Marwick ◽  
M. O. Aboelfotoh ◽  
R. Casparis
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Interface States ◽  
Hydrogen Atoms ◽  
Fermi Level Pinning ◽  
Gap States

ABSTRACTIt is shown that the presence of 8 × 1015 hydrogen atoms/cm2 in the CoSi2/Si (100) interface causes an increase in the Schottky barrier height of 120 meV, and that passivation of dopants in the substrate is not the cause of this change. The data is evidence that the position of the Fermi level in this interface is controlled by defect-related interface states. After hydrogenation the Schottky barrier height agrees with that predicted by theory for Fermi level pinning by virtual gap states of the silicon.

Fermi Level Pinning by Gap States in Organic Semiconductors

2013 ◽  
Vol 110 (3) ◽  
Author(s):  
S. Yogev ◽  
R. Matsubara ◽  
M. Nakamura ◽  
U. Zschieschang ◽  
H. Klauk ◽  
...  
Keyword(s):  
Fermi Level ◽  
Organic Semiconductors ◽  
Fermi Level Pinning ◽  
Gap States

Contactless Electromodulation Characterization of Compound Semiconductor Surfaces and Device Structures

1993 ◽  
Vol 324 ◽  
Author(s):  
J.M. Woodall
Keyword(s):  
Fermi Level ◽  
Electric Fields ◽  
Growth Conditions ◽  
Compound Semiconductor ◽  
Conduction Band Edge ◽  
Semiconductor Surfaces ◽  
Air Exposure ◽  
Fermi Level Pinning ◽  
Characterization Of Properties

AbstractThis paper will review the use of contactless electromodulation methods, such as photoreflectance (PR) and contactless electroreflectance (CER), to characterize the electronic properties of compound semiconductor surfaces exposed to different growth and post-growth conditions. Also the characterization of properties critical to device performance can be evaluated. For example, using PR and CER it has been found that there is a lower density of surface hole traps than electron traps in certain as-grown MBE (001) GaAs samples and that this condition persists even after air exposure. This behaviour is in contrast to other samples, including both bulk and MBE grown (001) surfaces in which the Fermi level is pinned mid-gap for both n- and p-type structures. We also have observed that Ar+ bombardment under UHV conditions results in Fermi level pinning close to the conduction band edge and that thermal annealing restores mid-gap pinning. Finally, using PR we are able to characterize the electric fields and associated doping levels in the emitter and collector regions of heterojunction bipolar transistor structures (fabricated from III-V materials), thus demonstrating the ability to perform inprocess evaluation of important device parameters.

scholarly journals Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier

2016 ◽  
Vol 2 (4) ◽  
pp. e1600069 ◽  
Author(s):  
Yuanyue Liu ◽  
Paul Stradins ◽  
Su-Huai Wei
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Van Der Waals ◽  
Two Dimensional ◽  
Fermi Level Pinning ◽  
Fundamental Properties ◽  
2D Semiconductors ◽  
Semiconductor Junction ◽  
Device Applications ◽  
Gap States

Two-dimensional (2D) semiconductors have shown great potential for electronic and optoelectronic applications. However, their development is limited by a large Schottky barrier (SB) at the metal-semiconductor junction (MSJ), which is difficult to tune by using conventional metals because of the effect of strong Fermi level pinning (FLP). We show that this problem can be overcome by using 2D metals, which are bounded with 2D semiconductors through van der Waals (vdW) interactions. This success relies on a weak FLP at the vdW MSJ, which is attributed to the suppression of metal-induced gap states. Consequently, the SB becomes tunable and can vanish with proper 2D metals (for example, H-NbS2). This work not only offers new insights into the fundamental properties of heterojunctions but also uncovers the great potential of 2D metals for device applications.

Tomographic investigation of fermi level pinning at focused ion beam milled semiconductor surfaces

2013 ◽  
Vol 103 (26) ◽  
pp. 264104 ◽  
Author(s):  
D. Wolf ◽  
A. Lubk ◽  
A. Lenk ◽  
S. Sturm ◽  
H. Lichte
Keyword(s):  
Fermi Level ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Surfaces ◽  
Fermi Level Pinning

Fermi-level pinning appears upon weak electrode-organic contact without gap states: A universal phenomenon

2017 ◽  
Vol 48 ◽  
pp. 172-178 ◽  
Author(s):  
Jin-Peng Yang ◽  
Lin-Tai Shang ◽  
Fabio Bussolotti ◽  
Li-Wen Cheng ◽  
Wen-Qing Wang ◽  
...  
Keyword(s):  
Fermi Level ◽  
Fermi Level Pinning ◽  
Gap States
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