Switching characteristics of Cu2O metal-insulator-metal resistive memory

2007 ◽  
Vol 91 (12) ◽  
pp. 123517 ◽  
Author(s):  
A. Chen ◽  
S. Haddad ◽  
Y. C. Wu ◽  
Z. Lan ◽  
T. N. Fang ◽  
...  
Keyword(s):  
Resistive Memory ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Switching Characteristics

scholarly journals Silicon-Carbide (SiC) Nanocrystal Technology and Characterization and Its Applications in Memory Structures

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2387
Author(s):  
Andrzej Mazurak ◽  
Robert Mroczyński ◽  
David Beke ◽  
Adam Gali
Keyword(s):  
Silicon Carbide ◽  
Hafnium Oxide ◽  
Electrical Performance ◽  
Flat Band ◽  
Metal Insulator ◽  
Sic Nanoparticles ◽  
Metal Structures ◽  
Metal Insulator Metal ◽  
Switching Characteristics ◽  
Cubic Silicon Carbide

Colloidal cubic silicon-carbide nanocrystals have been fabricated, characterized, and introduced into metal–insulator–semiconductor and metal–insulator–metal structures based on hafnium oxide layers. The fabricated structures were characterized through the stress-and-sense measurements in terms of device capacitance, flat-band voltage shift, switching characteristics, and retention time. The examined electrical performance of the sample structures has demonstrated the feasibility of the application of both types of structures based on SiC nanoparticles in memory devices.

scholarly journals DC Conduction and Switching Mechanisms in Electroformed Al/ZnTe:V/Cu Devices at Atmospheric Pressure

2011 ◽  
Vol 2011 ◽  
pp. 1-6
Author(s):  
M. S. Hossain ◽  
R. Islam ◽  
K. A. Khan
Keyword(s):  
Atmospheric Pressure ◽  
Memory Device ◽  
Negative Resistance ◽  
Metal Electrodes ◽  
Metal Insulator ◽  
Memory Switching ◽  
Circulation Current ◽  
Metal Insulator Metal ◽  
Switching Characteristics ◽  
Beam Deposition

Vanadium-doped zinc telluride (ZnTe:V) thin film sandwiched by two different metal electrodes, that is, Al/ZnTe:V/Cu structure, was deposited onto the glass substrate by e-beam deposition technique in vacuum at a pressure of ~8 × 10−4 Pa. The deposition rate of the film was maintained at 2.052 nms−1. Circulation current was measured through this device as a function of potential difference applied across the structure. The Al/ZnTe:V/Cu structures exhibit memory switching characteristics at atmospheric pressure in room temperature. Switching characteristics of deposited Al/ZnTe:V/Cu structure as a memory device have been investigated in detail for various vanadium compositions, thicknesses of ZnTe:V films as well as various film temperatures, respectively. In all cases, it is seen that the metal/insulator/metal (Al/ZnTe:V/Cu) structures based on ZnTe:V can undergo an electroforming process and exhibit voltage-controlled negative resistance (VCNR) or a new switching process. It is also observed that the electric field, temperature, thickness, and dopant composition have important role in the switching characteristics. Switching characteristics have been interpreted by using a filamentary model. The switching effects of Al/ZnTe:V/Cu device may have important applications in the energy-oriented devices.

Modeling, Fabrication, and Electrical Testing of Metal-Insulator-Metal Diode

2011 ◽  
Author(s):  
Terrance O'Regan ◽  
Matthew Chin ◽  
Cheng Tan ◽  
Anthony Birdwell
Keyword(s):  
Metal Insulator ◽  
Metal Insulator Metal

scholarly journals Hyperspectral Molecular Orientation Mapping in Metamaterials

2021 ◽  
Vol 11 (4) ◽  
pp. 1544
Author(s):  
Meguya Ryu ◽  
Yoshiaki Nishijima ◽  
Shinya Morimoto ◽  
Naoki To ◽  
Tomoki Hashizume ◽  
...  
Keyword(s):  
Molecular Orientation ◽  
Field Enhancement ◽  
Chemical Mapping ◽  
Metal Insulator ◽  
Orientation Mapping ◽  
Metal Insulator Metal ◽  
Finger Printing ◽  
Thermal Emitter ◽  
Ir Bands ◽  
Sub Wavelength

The four polarisation method is adopted for measurement of molecular orientation in dielectric nanolayers of metal-insulator-metal (MIM) metamaterials composed of gold nanodisks on polyimide and gold films. Hyperspectral mapping at the chemical finger printing spectral range of 4–20 μμm was carried out for MIM patterns of 1–2.5 μμm period (sub-wavelength). Overlay images taken at 0,π4,π2,3π4 orientation angles and subsequent baseline compensation are shown to be critically important for the interpretation of chemical mapping results and reduction of spurious artefacts. Light field enhancement in the 60-nm-thick polyimide (I in MIM) was responsible for strong absorption at the characteristic polyimide bands. Strong absorbance A at narrow IR bands can be used as a thermal emitter (emittance E=1−R), where R is the reflectance and A=1−R−T, where for optically thick samples the transmittance is T=0.

Nonstoichiometric Nanolayered Ni/NiO/Al2O3/CrAu Metal–Insulator–Metal Infrared Rectenna

2021 ◽  
Vol 4 (3) ◽  
pp. 2470-2475 ◽  
Author(s):  
Ayendra Weerakkody ◽  
Amina Belkadi ◽  
Garret Moddel
Keyword(s):  
Metal Insulator ◽  
Metal Insulator Metal
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