scholarly journals DC Conduction and Switching Mechanisms in Electroformed Al/ZnTe:V/Cu Devices at Atmospheric Pressure

2011 ◽  
Vol 2011 ◽  
pp. 1-6
Author(s):  
M. S. Hossain ◽  
R. Islam ◽  
K. A. Khan
Keyword(s):  
Atmospheric Pressure ◽  
Memory Device ◽  
Negative Resistance ◽  
Metal Electrodes ◽  
Metal Insulator ◽  
Memory Switching ◽  
Circulation Current ◽  
Metal Insulator Metal ◽  
Switching Characteristics ◽  
Beam Deposition

Vanadium-doped zinc telluride (ZnTe:V) thin film sandwiched by two different metal electrodes, that is, Al/ZnTe:V/Cu structure, was deposited onto the glass substrate by e-beam deposition technique in vacuum at a pressure of ~8 × 10−4 Pa. The deposition rate of the film was maintained at 2.052 nms−1. Circulation current was measured through this device as a function of potential difference applied across the structure. The Al/ZnTe:V/Cu structures exhibit memory switching characteristics at atmospheric pressure in room temperature. Switching characteristics of deposited Al/ZnTe:V/Cu structure as a memory device have been investigated in detail for various vanadium compositions, thicknesses of ZnTe:V films as well as various film temperatures, respectively. In all cases, it is seen that the metal/insulator/metal (Al/ZnTe:V/Cu) structures based on ZnTe:V can undergo an electroforming process and exhibit voltage-controlled negative resistance (VCNR) or a new switching process. It is also observed that the electric field, temperature, thickness, and dopant composition have important role in the switching characteristics. Switching characteristics have been interpreted by using a filamentary model. The switching effects of Al/ZnTe:V/Cu device may have important applications in the energy-oriented devices.

scholarly journals Understanding the Resistive Switching Phenomena of Stacked Al/Al2O3/Al Thin Films from the Dynamics of Conductive Filaments

Complexity ◽  
2017 ◽  
Vol 2017 ◽  
pp. 1-10 ◽  
Author(s):  
Joel Molina-Reyes ◽  
Luis Hernandez-Martinez
Keyword(s):  
Resistive Switching ◽  
Atomic Layer ◽  
Memory Device ◽  
Switching Behavior ◽  
Processing Temperature ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Deposition ◽  
Metal Insulator Metal ◽  
Switching Characteristics

We present the resistive switching characteristics of Metal-Insulator-Metal (MIM) devices based on amorphous Al2O3 which is deposited by Atomic Layer Deposition (ALD). A maximum processing temperature for this memory device is 300°C, making it ideal for Back-End-of-Line (BEOL) processing. Although some variations in the forming, set, and reset voltages (VFORM, VSET, and VRESET) are obtained for many of the measured MIM devices (mainly due to roughness variations of the MIM interfaces as observed after atomic-force microscopy analysis), the memristor effect has been obtained after cyclic I-V measurements. These resistive transitions in the metal oxide occur for both bipolar and unipolar conditions, while the IOFF/ION ratio is around 4–6 orders of magnitude and is formed at gate voltages of Vg<4 V. In unipolar mode, a gradual reduction in VSET is observed and is related to combined (a) incomplete dissolution of conductive filaments (made of oxygen vacancies and metal ions) which leaves some residuals and (b) thickening of chemically reduced Al2O3 during localized Joule heating. This is important because, by analyzing the macroscopic resistive switching behavior of this MIM structure, we could indirectly relate it to microscopic and/or nanoscopic phenomena responsible for the physical mechanism upon which most of these devices operate.

scholarly journals A ZnTe Thin Film Memory Device

1980 ◽  
Vol 7 (1-3) ◽  
pp. 93-96 ◽  
Author(s):  
Marc Burgelman
Keyword(s):  
Thin Film ◽  
Electrical Conduction ◽  
Sandwich Structure ◽  
Memory Device ◽  
Memory Switching ◽  
Frenkel Emission ◽  
Switching Characteristics

Thin ZnTe layers show memory switching characteristics. The electrical conduction in the non-ohmic off-state is shown to be due to Poole–Frenkel emission. An electrothermal model is proposed to explain the off-on transition; this model is confirmed by experiments. The characteristics of metal–ZnTe–metal sandwich structure as a memory device are investigated. The switching parameters are stable during a series of switching events, but the rather poor write–erase lifetime (200 cycles) still constitutes a handicap for the operation as a device.

scholarly journals Silicon-Carbide (SiC) Nanocrystal Technology and Characterization and Its Applications in Memory Structures

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2387
Author(s):  
Andrzej Mazurak ◽  
Robert Mroczyński ◽  
David Beke ◽  
Adam Gali
Keyword(s):  
Silicon Carbide ◽  
Hafnium Oxide ◽  
Electrical Performance ◽  
Flat Band ◽  
Metal Insulator ◽  
Sic Nanoparticles ◽  
Metal Structures ◽  
Metal Insulator Metal ◽  
Switching Characteristics ◽  
Cubic Silicon Carbide

Colloidal cubic silicon-carbide nanocrystals have been fabricated, characterized, and introduced into metal–insulator–semiconductor and metal–insulator–metal structures based on hafnium oxide layers. The fabricated structures were characterized through the stress-and-sense measurements in terms of device capacitance, flat-band voltage shift, switching characteristics, and retention time. The examined electrical performance of the sample structures has demonstrated the feasibility of the application of both types of structures based on SiC nanoparticles in memory devices.

Switching characteristics of Cu2O metal-insulator-metal resistive memory

2007 ◽  
Vol 91 (12) ◽  
pp. 123517 ◽  
Author(s):  
A. Chen ◽  
S. Haddad ◽  
Y. C. Wu ◽  
Z. Lan ◽  
T. N. Fang ◽  
...  
Keyword(s):  
Resistive Memory ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Switching Characteristics

Quantum-Tunneling Metal-Insulator-Metal Diodes Made by Rapid Atmospheric Pressure Chemical Vapor Deposition

2018 ◽  
Vol 29 (7) ◽  
pp. 1805533 ◽  
Author(s):  
Abdullah H. Alshehri ◽  
Kissan Mistry ◽  
Viet Huong Nguyen ◽  
Khaled H. Ibrahim ◽  
David Muñoz-Rojas ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Quantum Tunneling ◽  
Chemical Vapor ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Pressure Chemical
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