Focused ion beam implantation induced site-selective growth of InAs quantum dots

2007 ◽  
Vol 91 (12) ◽  
pp. 123108 ◽  
Author(s):  
M. Mehta ◽  
D. Reuter ◽  
A. Melnikov ◽  
A. D. Wieck ◽  
A. Remhof
Keyword(s):  
Quantum Dots ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Selective Growth ◽  
Inas Quantum Dots ◽  
Ion Beam Implantation ◽  
Site Selective

Focused-ion-beam-directed nucleation of InAs quantum dots

2007 ◽  
Vol 90 (16) ◽  
pp. 163109 ◽  
Author(s):  
H. A. McKay ◽  
A. Dehne ◽  
J. Y. Lee ◽  
J. M. Millunchick
Keyword(s):  
Quantum Dots ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Inas Quantum Dots

6.5.7 Site-selective growth of InAs quantum dots on InP

2013 ◽  
pp. 148-149
Author(s):  
C. Höfling ◽  
C. Schneider ◽  
A. Forchel
Keyword(s):  
Quantum Dots ◽  
Selective Growth ◽  
Inas Quantum Dots ◽  
Site Selective

Ground-state exciton emission of InAs quantum dots produced by focused-ion-beam-directed nucleation

2013 ◽  
Vol 133 ◽  
pp. 117-120 ◽  
Author(s):  
J.-E. Lee ◽  
T.W. Saucer ◽  
A.J. Martin ◽  
D. Tien ◽  
J.M. Millunchick ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ground State ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Inas Quantum Dots ◽  
Exciton Emission

Altering the luminescence properties of self-assembled quantum dots in GaAs by focused ion beam implantation

2016 ◽  
Vol 122 (3) ◽  
Author(s):  
Charlotte Rothfuchs ◽  
Nadezhda Kukharchyk ◽  
Markus K. Greff ◽  
Andreas D. Wieck ◽  
Arne Ludwig
Keyword(s):  
Quantum Dots ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Luminescence Properties ◽  
Ion Beam Implantation ◽  
Self Assembled

Influence of Post-Implantation Annealing Parameters on the Focused Ion Beam Directed Nucleation of InAs Quantum Dots

NANO ◽  
2015 ◽  
Vol 10 (04) ◽  
pp. 1550049 ◽  
Author(s):  
M. Mehta ◽  
D. Reuter ◽  
M. Kamruddin ◽  
A. K. Tyagi ◽  
A. D. Wieck
Keyword(s):  
Quantum Dots ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Optical Quality ◽  
Buffer Layers ◽  
Inas Quantum Dots ◽  
Annealing Conditions ◽  
Potential Applications ◽  
Patterning Technique ◽  
Post Implantation

We present the effect of post-implantation annealing conditions on the structural and optical quality of InAs quantum dots (QDs) grown by combination of focused ion beam (FIB) and molecular beam epitaxy (MBE) approach. A FIB of Ga + ion was employed to pattern a homogeneously GaAs buffer layers and then, an in situ annealing step followed by InAs deposition was performed. Three different post-implantation annealing conditions were tested and under well-optimized conditions, a dislocation and defect-free InAs QDs growth on FIB patterned surface was successfully achieved. Furthermore, using photoluminescence (PL) study, we demonstrate that our best sample shows almost similar optical quality as MBE grown QDs on unimplanted GaAs surface. The patterning technique described here can presumably be applied to systems other than InAs / GaAs and highly interesting for site-controlled nucleation of QDs that finds its potential applications in nanooptoelectronic devices.

Conductance Oscillations in Hopping Conduction Systems Fabricated by Focused Ion Beam Implantation

1997 ◽  
Vol 36 (Part 1, No. 6B) ◽  
pp. 4046-4048 ◽  
Author(s):  
Hiroki Kondo ◽  
Hirotaka Iwano ◽  
Osamu Nakatsuka ◽  
Kazutaka Kaga ◽  
Shigeaki Zaima ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Hopping Conduction ◽  
Ion Beam Implantation
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