We present the effect of post-implantation annealing conditions on the structural and optical quality of InAs quantum dots (QDs) grown by combination of focused ion beam (FIB) and molecular beam epitaxy (MBE) approach. A FIB of Ga + ion was employed to pattern a homogeneously GaAs buffer layers and then, an in situ annealing step followed by InAs deposition was performed. Three different post-implantation annealing conditions were tested and under well-optimized conditions, a dislocation and defect-free InAs QDs growth on FIB patterned surface was successfully achieved. Furthermore, using photoluminescence (PL) study, we demonstrate that our best sample shows almost similar optical quality as MBE grown QDs on unimplanted GaAs surface. The patterning technique described here can presumably be applied to systems other than InAs / GaAs and highly interesting for site-controlled nucleation of QDs that finds its potential applications in nanooptoelectronic devices.
Дискриминация поперечных мод в торцевых полупроводниковых лазерах с пространственной модуляцией отражения выходных зеркал