scholarly journals Dielectric properties of hydrogen-incorporated chemical vapor deposited diamond thin films

2007 ◽  
Vol 102 (7) ◽  
pp. 074115 ◽  
Author(s):  
Chao Liu ◽  
Xingcheng Xiao ◽  
Jian Wang ◽  
Bing Shi ◽  
Vivekananda P. Adiga ◽  
...  
1994 ◽  
Vol 65 (22) ◽  
pp. 2827-2829 ◽  
Author(s):  
B. Y. Liaw ◽  
T. Stacy ◽  
G. Zhao ◽  
E. J. Charlson ◽  
E. M. Charlson ◽  
...  

1996 ◽  
Vol 423 ◽  
Author(s):  
Hassan Golestanian ◽  
S. Mirzakuchaki ◽  
E. J. Charlson ◽  
T. Stacy ◽  
E. M. Charlson

AbstractHot-filament chemical vapor deposited (HFCVD) boron doped polycrystalline diamond thin films having low volume resistivity were grown on sapphire. The films were characterized using scanning electron microscope (SEM), X-ray diffraction, and current-voltage measurements. SEM micrographs show good crystalline structure with preferred (100) orientation normal to the surface of the film. X-ray diffraction pattern revealed diamond characteristics with the four typical diamond peaks present. Finally, the obtained I-V characteristics indicated that the film's volume resistivity is at least two orders of magnitude lower than those of HFCVD polycrystalline diamond thin films grown on silicon under similar growth conditions.


1990 ◽  
Vol 9 (2-3) ◽  
pp. 80-82 ◽  
Author(s):  
Masao Kohzaki ◽  
Kazuo Higuchi ◽  
Shoji Noda

2007 ◽  
Vol 515 (7-8) ◽  
pp. 3513-3520 ◽  
Author(s):  
Hao Jiang ◽  
Lianggou Hong ◽  
N. Venkatasubramanian ◽  
John T. Grant ◽  
Kurt Eyink ◽  
...  

1997 ◽  
Vol 36 (Part 1, No. 3A) ◽  
pp. 1238-1244 ◽  
Author(s):  
Jong-Wan Park ◽  
You-Kee Lee ◽  
Sei-Hyun Lee ◽  
Kwang-Joon Cho ◽  
Jae-Suk Lee ◽  
...  

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