Direct determination of the free-carrier injection density, the free-carrier absorption, and the recombination factors in double heterostructure diodes by optical phase measurements. Part III

2005 ◽  
Vol 97 (12) ◽  
pp. 123536 ◽  
Author(s):  
F. K. Reinhart
1980 ◽  
Vol 51 (5) ◽  
pp. 2659 ◽  
Author(s):  
W. Walukiewicz ◽  
J. Lagowski ◽  
L. Jastrzebski ◽  
P. Rava ◽  
M. Lichtensteiger ◽  
...  

1979 ◽  
Vol 50 (2) ◽  
pp. 899-908 ◽  
Author(s):  
W. Walukiewicz ◽  
L. Lagowski ◽  
L. Jastrzebski ◽  
M. Lichtensteiger ◽  
H. C. Gatos

1996 ◽  
Vol 74 (S1) ◽  
pp. 29-31 ◽  
Author(s):  
C. Fernando ◽  
S. Janz ◽  
R. Normandin ◽  
J. P. Noël ◽  
N. G. Tarr ◽  
...  

A Si1−xGex pin optical waveguide modulator operating at a wavelength of λ = 1.3 μm was designed and demonstrated. The free carrier absorption by carriers injected into the i region under high forward bias was used to attenuate the guided mode intensity. Numerical simulations indicate that this structure can operate at speeds up to 200 MHz. A maximum modulation depth of 85% was measured for a 2 mm long waveguide using a peak modulation current of 4200 A cm−2.


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