Sense determination of micropipes via grazing-incidence synchrotron white beam x-ray topography in 4H silicon carbide

2007 ◽  
Vol 91 (7) ◽  
pp. 071917 ◽  
Author(s):  
Y. Chen ◽  
G. Dhanaraj ◽  
M. Dudley ◽  
E. K. Sanchez ◽  
M. F. MacMillan
Keyword(s):  
Silicon Carbide ◽  
Grazing Incidence ◽  
X Ray ◽  
White Beam

Simulation of Grazing-Incidence Synchrotron White Beam X-ray Topographic Images of Micropipes in 4H-SiC and Determination of Their Dislocation Senses

2007 ◽  
Vol 37 (5) ◽  
pp. 713-720 ◽  
Author(s):  
Yi Chen ◽  
Michael Dudley ◽  
Edward K. Sanchez ◽  
Michael F. MacMillan
Keyword(s):  
Grazing Incidence ◽  
X Ray ◽  
White Beam

Mapping of Defects in Large-Area Silicon Carbide Wafers via Photoluminescence and its Correlation with Synchrotron White Beam X-Ray Topography

2008 ◽  
Vol 600-603 ◽  
pp. 549-552 ◽  
Author(s):  
Yi Chen ◽  
R. Balaji ◽  
Michael Dudley ◽  
Madhu Murthy ◽  
Serguei I. Maximenko ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Grain Boundaries ◽  
Comparative Studies ◽  
Large Scale ◽  
Grazing Incidence ◽  
Defect Structures ◽  
Large Area ◽  
X Ray ◽  
White Beam ◽  
Defect Microstructure

Comparative studies of defect microstructure in 4H-SiC wafers have been carried out using photoluminescence (PL) imaging and grazing-incidence Synchrotron White Beam X-ray Topography. Images of low angle grain boundaries on the PL images correlate well with SWBXT observations, and similar correlation can be established for some micropipe images although the latter is complicated by the overall level of distortion and misorientation associated with the low angle grain boundaries and the fact that many of the micropipes are located in or close to the boundaries. This validation indicates that PL imaging may provide a rapid way of imaging such defect structures in large-scale SiC wafers.

Structure determination of ultrathin NbSe2 films by Grazing incidence x-ray diffraction

1994 ◽  
Vol 89 (7) ◽  
pp. 583-586 ◽  
Author(s):  
Toshihiro Shimada ◽  
Yukito Furukawa ◽  
Etsuo Arakawa ◽  
Kunikazu Takeshita ◽  
Tadashi Matsushita ◽  
...  
Keyword(s):  
Structure Determination ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray

Quantitative Determination of Lateral Concentration and Depth Profile of Histidine-Tagged Recombinant Proteins Probed by Grazing Incidence X-ray Fluorescence

2013 ◽  
Vol 117 (17) ◽  
pp. 5002-5008 ◽  
Author(s):  
Alexander Körner ◽  
Wasim Abuillan ◽  
Christina Deichmann ◽  
Fernanda F. Rossetti ◽  
Almut Köhler ◽  
...  
Keyword(s):  
Quantitative Determination ◽  
Recombinant Proteins ◽  
Depth Profile ◽  
Grazing Incidence ◽  
X Ray

Investigation of Semiconductor Heterostructures by White Beam Synchrotron X-Ray Topography in Grazing Bragg-Laue and Conventional Bragg Geometries

1991 ◽  
Vol 35 (A) ◽  
pp. 247-253
Author(s):  
G.-D. Yao ◽  
J. Wu ◽  
T. Fanning ◽  
M. Dudley
Keyword(s):  
Penetration Depth ◽  
Grazing Incidence ◽  
Semiconductor Heterostructures ◽  
Misfit Dislocations ◽  
Strained Layers ◽  
X Ray ◽  
Main Reflection ◽  
White Beam ◽  
Topographic Imaging

AbstractWhite beam synchrotron X-ray topography has been applied both to the characterization of two semiconductor heterostructures, GaAs/Si and InxGa1-xAs/GaAs strained layers, and a substrate to be used for growing semiconductor epilayers, Cd1-xZnxTe. In the case of the heterostructures, misfit dislocations were observed using depth sensitive X-ray topographic imaging in grazing incidence Bragg-Laue geometries. The X-ray penetration depth, which can be varied from several hundreds of angstroms to hundreds of micrometers by rotating about the main reflection vector, which in this specific case was (355), is governed by kinernatical theory. This is justified by comparing dislocation contrast and visibility with the extent of the calculated effective misorientalion field in comparison to the effective X-ray penetration depth. For the case of Cd1-xZnxTe, twin configurations are observed, and their analysis is presented.

Grazing-incidence X-Ray Analysis of Surfaces and Thin Films

1991 ◽  
Vol 35 (A) ◽  
pp. 143-150 ◽  
Author(s):  
T. C. Huang
Keyword(s):  
Thin Films ◽  
Depth Profiling ◽  
Grazing Incidence ◽  
Bragg Diffraction ◽  
Interface Roughness ◽  
Phase Identification ◽  
X Ray ◽  
Types Of Information

AbstractGrazing-incidence X-ray analysis techniques which are commonly used for the nondestructive characterization of surfaces and thin films are reviewed. The X-ray reflectivity technicue is used to study surface uniformity and oxidation, layer thickness and density, interface roughness and diffusion, etc. The grazing-incidence in-plane diffraction technique is used to determine in-plane crystallography of epitaxial films. The grazing-incidence asymmetric-Bragg diffraction is used for surface phase identification and structural depth profiling determination of polycrystalline films. Typical examples to illustrate the types of information that can be obtained by the techniques are presented.

scholarly journals Determination of the copper layer thickness in spin valves by grazing incidence X-ray fluorescence

1998 ◽  
Vol 34 (4) ◽  
pp. 831-833 ◽  
Author(s):  
T.P.A. Hase ◽  
K. Tanner ◽  
P. Ryan ◽  
C.H. Marrows ◽  
B.J. Hickey
Keyword(s):  
Layer Thickness ◽  
Grazing Incidence ◽  
Copper Layer ◽  
Spin Valves ◽  
X Ray

Determination of Strain Distributions in Aluminum Thin Films as a Function of Temperature by the use of Synchrotron Grazing Incidence X-Ray Scattering

1991 ◽  
Vol 239 ◽  
Author(s):  
Ramnath Venkatraman ◽  
Paul R. Besser ◽  
Sean Brennan ◽  
John C. Bravman
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Grazing Incidence ◽  
Surface Relaxation ◽  
Line Broadening ◽  
X Ray ◽  
Relaxation Effects ◽  
X Ray Scattering ◽  
Ray Scattering

ABSTRACTWe have measured elastic strain distributions with depth as a function of temperature in Al thin films of various thicknesses on oxidized silicon using synchrotron grazing incidence X-ray scattering (GIXS). Disregarding minor surface relaxation effects that depend on the film thickness, it is shown that there are no gross strain gradients in these films in the range of temperatures (between room temperature and 400°C) considered. We also observe X-ray line broadening effects, suggesting an accumulation of dislocations on cooling the films, and their annealing out as the films are reheated.

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