Temperature-dependent photoresponsivity and high-temperature (190K) operation of a quantum dot infrared photodetector

Xuejun Lu; Jarrod Vaillancourt; Mark J. Meisner

doi:10.1063/1.2766655

Temperature-dependent photoresponsivity and high-temperature (190K) operation of a quantum dot infrared photodetector

Applied Physics Letters ◽

10.1063/1.2766655 ◽

2007 ◽

Vol 91 (5) ◽

pp. 051115 ◽

Cited By ~ 52

Author(s):

Xuejun Lu ◽

Jarrod Vaillancourt ◽

Mark J. Meisner

Keyword(s):

High Temperature ◽

Quantum Dot ◽

Infrared Photodetector ◽

Temperature Dependent ◽

Quantum Dot Infrared Photodetector

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Low-bias, high-temperature performance of a normal-incidence InAs/GaAs vertical quantum-dot infrared photodetector with a current-blocking barrier

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1461370 ◽

2002 ◽

Vol 20 (3) ◽

pp. 1185 ◽

Cited By ~ 37

Author(s):

A. D. Stiff-Roberts ◽

S. Krishna ◽

P. Bhattacharya ◽

S. Kennerly

Keyword(s):

High Temperature ◽

Quantum Dot ◽

Normal Incidence ◽

Infrared Photodetector ◽

Temperature Performance ◽

Quantum Dot Infrared Photodetector ◽

Current Blocking ◽

A Current

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High temperature operation In(Ga)As quantum dot infrared photodetector focal plane arrays passivated with 6.5 nm-thick Al2O3 layer

International Journal of Nanotechnology ◽

10.1504/ijnt.2014.059835 ◽

2014 ◽

Vol 11 (1/2/3/4) ◽

pp. 345

Author(s):

Shiang Feng Tang ◽

Wen Jen Lin ◽

Tzu Chiang Chen ◽

Shih Yen Lin

Keyword(s):

High Temperature ◽

Quantum Dot ◽

Focal Plane ◽

Focal Plane Arrays ◽

Infrared Photodetector ◽

Quantum Dot Infrared Photodetector ◽

High Temperature Operation

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High temperature operated (∼250 K) photovoltaic-photoconductive (PV-PC) mixed-mode InAs/GaAs quantum dot infrared photodetector

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) ◽

10.1109/iedm.2000.904391 ◽

2002 ◽

Author(s):

Shiang-Feng Tang ◽

Shih-Yen Lin ◽

Si-Chen Lee ◽

Chieh Hsiung Kuan ◽

Ya-Tung Cherng

Keyword(s):

High Temperature ◽

Quantum Dot ◽

Mixed Mode ◽

Infrared Photodetector ◽

Quantum Dot Infrared Photodetector ◽

Gaas Quantum Dot

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Normal-incidence, high-temperature, mid-infrared, InAs-GaAs vertical quantum-dot infrared photodetector

IEEE Journal of Quantum Electronics ◽

10.1109/3.958360 ◽

2001 ◽

Vol 37 (11) ◽

pp. 1412-1419 ◽

Cited By ~ 151

Author(s):

A.D. Stiff ◽

S. Krishna ◽

P. Bhattacharya ◽

S.W. Kennerly

Keyword(s):

High Temperature ◽

Quantum Dot ◽

Normal Incidence ◽

Infrared Photodetector ◽

Mid Infrared ◽

Quantum Dot Infrared Photodetector

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Thermal imaging based on high-performance InAs/InP quantum-dot infrared photodetector operating at high temperature

LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings ◽

10.1109/leos.2007.4382251 ◽

2007 ◽

Author(s):

M. Razeghi ◽

H. Lim ◽

S. Tsao ◽

H. Seo ◽

W. Zhang

Keyword(s):

High Temperature ◽

Quantum Dot ◽

Thermal Imaging ◽

High Performance ◽

Infrared Photodetector ◽

Quantum Dot Infrared Photodetector

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Low-bias, high-temperature operation of an InAs–InGaAs quantum-dot infrared photodetector with peak-detection wavelength of 11.7μm

Infrared Physics & Technology ◽

10.1016/j.infrared.2008.10.002 ◽

2009 ◽

Vol 52 (1) ◽

pp. 22-24 ◽

Cited By ~ 18

Author(s):

Jarrod Vaillancourt ◽

Andreas Stintz ◽

Mark J. Meisner ◽

Xuejun Lu

Keyword(s):

High Temperature ◽

Quantum Dot ◽

Peak Detection ◽

Infrared Photodetector ◽

Quantum Dot Infrared Photodetector ◽

High Temperature Operation

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Evidence of long-wave-infrared excited state transition at high temperature (200 K) in 35-layer In0.50Ga0.50As/GaAs quantum dot infrared photodetector

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4801791 ◽

2013 ◽

Vol 31 (3) ◽

pp. 03C128 ◽

Cited By ~ 1

Author(s):

Sourav Adhikary ◽

Subhananda Chakrabarti

Keyword(s):

Excited State ◽

High Temperature ◽

Quantum Dot ◽

State Transition ◽

Infrared Photodetector ◽

Long Wave ◽

Quantum Dot Infrared Photodetector ◽

Gaas Quantum Dot ◽

Long Wave Infrared

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High-temperature operation normal incident 256/spl times/256 InAs-GaAs quantum-dot infrared photodetector focal plane array

IEEE Photonics Technology Letters ◽

10.1109/lpt.2006.873458 ◽

2006 ◽

Vol 18 (8) ◽

pp. 986-988 ◽

Cited By ~ 49

Author(s):

Shiang-Feng Tang ◽

Cheng-Der Chiang ◽

Ping-Kuo Weng ◽

Yau-Tang Gau ◽

Jiunn-Jye Luo ◽

...

Keyword(s):

High Temperature ◽

Quantum Dot ◽

Focal Plane ◽

Focal Plane Array ◽

Infrared Photodetector ◽

Quantum Dot Infrared Photodetector ◽

Gaas Quantum Dot ◽

High Temperature Operation

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6.5 nm-thick Al2O3 Surface passivated layer grown on two stacks of 10-period InGaAs and GaAs-capped InAs Quantum Dot Infrared Photodetector Focal Plane Arrays for high temperature operation

2013 IEEE 5th International Nanoelectronics Conference (INEC) ◽

10.1109/inec.2013.6466042 ◽

2013 ◽

Author(s):

Shiang-Feng Tang ◽

Tzu-Chiang Chen ◽

Wen-Jen Lin ◽

Shih-Yen Lin

Keyword(s):

High Temperature ◽

Quantum Dot ◽

Focal Plane ◽

Focal Plane Arrays ◽

Infrared Photodetector ◽

Quantum Dot Infrared Photodetector ◽

Inas Quantum Dot ◽

High Temperature Operation

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High-performance 30-period quantum-dot infrared photodetector

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1900730 ◽

2005 ◽

Vol 23 (3) ◽

pp. 1129 ◽

Cited By ~ 3

Author(s):

Shu-Ting Chou ◽

Shih-Yen Lin ◽

Ru-Shang Hsiao ◽

Jim-Yong Chi ◽

Jyh-Shyang Wang ◽

...

Keyword(s):

Quantum Dot ◽

High Performance ◽

Infrared Photodetector ◽

Quantum Dot Infrared Photodetector

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