Evidence of long-wave-infrared excited state transition at high temperature (200 K) in 35-layer In0.50Ga0.50As/GaAs quantum dot infrared photodetector

2013 ◽  
Vol 31 (3) ◽  
pp. 03C128 ◽  
Author(s):  
Sourav Adhikary ◽  
Subhananda Chakrabarti
Keyword(s):  
Excited State ◽  
High Temperature ◽  
Quantum Dot ◽  
State Transition ◽  
Infrared Photodetector ◽  
Long Wave ◽  
Quantum Dot Infrared Photodetector ◽  
Gaas Quantum Dot ◽  
Long Wave Infrared

High-performance, long-wave (∼10.2 μm) InGaAs/GaAs quantum dot infrared photodetector with quaternary In0.21Al0.21Ga0.58As capping

2011 ◽  
Vol 99 (18) ◽  
pp. 181102 ◽  
Author(s):  
Subhananda Chakrabarti ◽  
Sourav Adhikary ◽  
Nilanjan Halder ◽  
Yigit Aytac ◽  
A. G. U. Perera
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Infrared Photodetector ◽  
Long Wave ◽  
Quantum Dot Infrared Photodetector ◽  
Gaas Quantum Dot

scholarly journals A Study on Doping Density in InAs/GaAs Quantum Dot Infrared Photodetector

2004 ◽  
Vol 43 (8A) ◽  
pp. 5199-5203 ◽  
Author(s):  
Uk Hyun Lee ◽  
Yong Hoon Kang ◽  
Joon Ho Oum ◽  
Sang-Jun Lee ◽  
Moondok Kim ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Infrared Photodetector ◽  
Doping Density ◽  
Quantum Dot Infrared Photodetector ◽  
Gaas Quantum Dot
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