scholarly journals Observation of room-temperature ferroelectricity in tetragonal strontium titanate thin films on SrTiO3 (001) substrates

2007 ◽  
Vol 91 (4) ◽  
pp. 042908 ◽  
Author(s):  
Y. S. Kim ◽  
D. J. Kim ◽  
T. H. Kim ◽  
T. W. Noh ◽  
J. S. Choi ◽  
...  
Keyword(s):  
Thin Films ◽  
Strontium Titanate ◽  
Room Temperature

Room-temperature growth of thin films of niobium on strontium titanate (0 0 1) single-crystal substrates for superconducting joints

2018 ◽  
Vol 444 ◽  
pp. 71-74 ◽  
Author(s):  
Yuhei Shimizu ◽  
Kazuhiko Tonooka ◽  
Yoshiyuki Yoshida ◽  
Mitsuho Furuse ◽  
Hiroshi Takashima
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Strontium Titanate ◽  
Room Temperature ◽  
Temperature Growth

Structural and Electrical Investigations of Ferroelectric Lead Strontium Titanate Thin Films and Ceramics

2003 ◽  
Vol 784 ◽  
Author(s):  
M. Jain ◽  
P. Bhattacharya ◽  
Yu. I. Yuzyuk ◽  
R. S. Katiyar ◽  
A. S. Bhalla
Keyword(s):  
Thin Films ◽  
Strontium Titanate ◽  
Room Temperature ◽  
Powder Processing ◽  
Lattice Structure ◽  
Spectroscopic Studies ◽  
Cubic Phase ◽  
Raman Spectroscopic ◽  
Structure Changes ◽  
Ceramic Targets

ABSTRACTLead strontium titanate (PbxSr1-xTiO3) (x=0.3–1.0) ceramic targets were prepared by the conventional powder-processing method. Thin films of these compositions were deposited on platinized silicon substrates by pulsed laser deposition technique. X-ray diffraction studies of the ceramic targets showed that the lattice structure changes from tetragonal to cubic phase with the increase of Sr content in PbTiO3. Raman spectroscopic studies of PbxSr1-xTiO3(PST) ceramics and thin films showed that the soft mode decreases to lower frequency and finally disappear at around 60–70 at% Sr content, which confirms the tetragonal to cubic phase transition at room temperature. Dielectric constant measured for PST thin films was in the range of 900–1500 at 1 MHz, with maximum value obtained for PST30 thin film. The loss tangents at room temperature were in the range of 0.07–0.1 for PST thin films with different compositions.

scholarly journals Photoluminescence characteristics of strontium titanate thin films prepared by spray pyrolysis

2014 ◽  
Vol 10 (2) ◽  
Author(s):  
S. Aisah Mat ◽  
Karim Deraman ◽  
R. Hussin ◽  
W. Nurulhuda W. Shamsuri ◽  
Bakar Ismail ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Aqueous Solution ◽  
Spray Pyrolysis ◽  
Strontium Titanate ◽  
Room Temperature ◽  
Band Gap Energy ◽  
Molar Ratio ◽  
Photoluminescence Spectra ◽  
Gap Energy

Strontium titanate, SrTiO3 thin films were successfully prepared by spray pyrolysis. The strontium titanate, STO precursor solid thin film were fabricated from an aqueous solution of Sr(NO3)2/[(CH3)2CHO]4Ti/HNO3 = 19:1:20 (molar ratio) at room temperature on a substrate. The as-deposited STO thin film with those annealed at different temperature were prepared. Photoluminescence spectra of thin films were obtained using Photoluminescence Spectrophotometer and optical properties were carried out by using Shimadzu Uv-Vis Spectrophotometer. In conclusion, the band gap energy and the bandwidth of thin films have been analysed.  ________________________________________GRAPHICAL ABSTRACT

Improved Dielectric Response in Strontium Titanate Thin Films Grown by Pulsed Laser Ablation

1997 ◽  
Vol 474 ◽  
Author(s):  
M. J. Dalberth ◽  
R. E. Stauber ◽  
J. C. Price ◽  
C. T. Rogers ◽  
David Galt
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Strontium Titanate ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Large Temperature ◽  
Lanthanum Aluminate ◽  
Temperature Tuning ◽  
Dc Bias ◽  
Substrate Temperatures

ABSTRACTWe have grown epitaxial strontium titanate films on lanthanum aluminate substrates at a range of oxygen pressures and substrate temperatures. The complex dielectric function was measured versus frequency (10 kHz to 1 MHz) and temperature (room temperature to 4.2 K) on coplanar capacitors patterned on the films. Preliminary data from 1.5 to 2.5 GHz is also presented. The dielectric constant εr was as high as 4600 at 65 K, a factor of two greater than previously reported for strontium titanate thin films and a factor of 1.8 greater than the bulk value at the same temperature. Tuning the capacitor by applying a dc bias of ±15 V across the 3 μm coplanar gap at 4.2 K yielded a ratio of maximum to minimum dielectric constant of 2.8. At 101 K this ratio was 2.2. A bulk capacitor does not show tuning over such a large temperature range.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

Interactions Between Al and Cr Thin Films

1976 ◽  
Vol 34 ◽  
pp. 638-639
Author(s):  
R. M. Anderson ◽  
T. M. Reith ◽  
M. J. Sullivan ◽  
E. K. Brandis
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Vacuum System ◽  
Processing Temperature ◽  
Diffusion Couples ◽  
Electronic Circuits ◽  
Intermetallic Formation ◽  
Si Substrates ◽  
Aluminum Silicon

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.

Investigation of ultra-thin films of YBa2Cu3O7−δ grown on MgO

1990 ◽  
Vol 48 (4) ◽  
pp. 6-7
Author(s):  
S.K. Streiffer ◽  
C.B. Eom ◽  
J.C. Bravman ◽  
T.H. Geballet
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Deposition Process ◽  
Nucleation And Growth ◽  
Multilayer Structures ◽  
Rf Power ◽  
Oxygen Loss ◽  
Transmission Electron ◽  
Single Target ◽  
Mtorr Argon

The study of very thin (<15 nm) YBa2Cu3O7−δ (YBCO) films is necessary both for investigating the nucleation and growth of films of this material and for achieving a better understanding of multilayer structures incorporating such thin YBCO regions. We have used transmission electron microscopy to examine ultra-thin films grown on MgO substrates by single-target, off-axis magnetron sputtering; details of the deposition process have been reported elsewhere. Briefly, polished MgO substrates were attached to a block placed at 90° to the sputtering target and heated to 650 °C. The sputtering was performed in 10 mtorr oxygen and 40 mtorr argon with an rf power of 125 watts. After deposition, the chamber was vented to 500 torr oxygen and allowed to cool to room temperature. Because of YBCO’s susceptibility to environmental degradation and oxygen loss, the technique of Xi, et al. was followed and a protective overlayer of amorphous YBCO was deposited on the just-grown films.

TEM sample preparation of wear-tested room-temperature pulsed-laser-deposited thin films of MoS2 by ultramicrotomy

1993 ◽  
Vol 51 ◽  
pp. 1118-1119
Author(s):  
Pamela F. Lloyd ◽  
Scott D. Walck
Keyword(s):  
Thin Films ◽  
Sample Preparation ◽  
Room Temperature ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Ultra High Vacuum ◽  
Wear Testing ◽  
Preparation Technique ◽  
Cross Sectional ◽  
Aerospace Applications

Pulsed laser deposition (PLD) is a novel technique for the deposition of tribological thin films. MoS2 is the archetypical solid lubricant material for aerospace applications. It provides a low coefficient of friction from cryogenic temperatures to about 350°C and can be used in ultra high vacuum environments. The TEM is ideally suited for studying the microstructural and tribo-chemical changes that occur during wear. The normal cross sectional TEM sample preparation method does not work well because the material’s lubricity causes the sandwich to separate. Walck et al. deposited MoS2 through a mesh mask which gave suitable results for as-deposited films, but the discontinuous nature of the film is unsuitable for wear-testing. To investigate wear-tested, room temperature (RT) PLD MoS2 films, the sample preparation technique of Heuer and Howitt was adapted.Two 300 run thick films were deposited on single crystal NaCl substrates. One was wear-tested on a ball-on-disk tribometer using a 30 gm load at 150 rpm for one minute, and subsequently coated with a heavy layer of evaporated gold.

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